Preliminary
SIM200D06AV2
V
CES
= 600V
Ic= 200A
V
CE(ON)
typ. = 1.6V
@Ic= 200A
“HALF-BRIDGE” IGBT
Feature
▪
Smart field stopper +Trench
design technology
▪
Low V
CE
(sat)
▪
Low Turn-off losses
▪
Short tail current for over 20KHz
Applications
▪
Motor controls
▪
VVVF inverters
▪
Inverter-type welding MC over 18KHZ
▪
SMPS, Electrolysis
▪
UPS/EPS, Robotics
PKG: V2=48mm
Absolute Maximum Ratings
@ Tj=25℃ (Per Leg)
Symbol
V
CES
V
GE
I
C
I
CP
I
F
I
FM
t
p
V
iso
Weight
Tj
Tstg
Md
Parameter
Collector-to-Emitter Voltage
Gate emitter voltage
Continuous Collector Current
Pulsed collector current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short circuit test, V
GE
= 15V, V
CC
= 360V
Isolation Voltage test
Weight of Module
Junction Temperature
Storage Temperature
Mounting torque with screw : M5
Terminal connection torque : M5
T
C
=
25℃
Condition
Ratings
600
±
20
Unit
V
V
A
A
A
A
㎲
V
g
℃
℃
N.m
N.m
T
C
= 80℃
(25℃)
T
C
=
25℃
T
C
= 80℃
(25℃)
T
C
=
25℃
T
C
= 150℃
(25℃)
AC @ 1 minute
200 (290)
450
200 (290)
400
6 (8)
2500
190
-40 ~ 150
-40 ~ 125
2.0
2.0
Static Characteristics
@ Tj = 25℃ (unless otherwise specified)
Parameters
V
CE(ON)
V
GE(th)
I
CES
I
GES
V
F
R
GINT
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Forward voltage drop
Integrated gate resistor
ㅡ
ㅡ
ㅡ
Min
Typ
1.60
5.8
ㅡ
ㅡ
1.6
2
Max
1.95
Unit
V
Test conditions
I
C
= 200A, V
GE
= 15V
V
CE
= V
GE,
I
C
= 4㎃
6.5
5.0
400
1.9
ㅡ
㎃
㎁
V
Ω
V
GE
= 0V, V
CE
= 600V
V
CE
= 0V, V
GE
=
20V
I
F
= 200A
-1-
Preliminary
SIM200D06AV2
Electrical Characteristic Values (IGBT / DIODE)
@ Tj = 25℃ (unless otherwise specified)
Parameters
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
t
f
V
BR
I
RM
t
rr
Q
rr
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Cathode-Anode breakdown Voltage
Maximum Reverse Leakage Current
Reverse Recovery Time
Reverse Recovery Charge
Min
ㅡ
ㅡ
ㅡ
ㅡ
ㅡ
ㅡ
ㅡ
600
ㅡ
ㅡ
ㅡ
Typ
9200
580
270
145
30
340
60
ㅡ
ㅡ
130
9
Max
ㅡ
ㅡ
ㅡ
ㅡ
ㅡ
Unit
Test conditions
V
CE
= 25V
,
V
GE
=
0V
f = 1 MHz
Inductive Switching (125℃)
V
CC
= 300V
pF
ns
ㅡ
ㅡ
ㅡ
250
ㅡ
ㅡ
V
㎂
ns
µC
V
R
= 600V
I
F
= 200A, V
R
= 300V
di / dt = 2200A /
㎲
I
C
= 200A, V
GE
=
±15V
R
G
= 2
Ω
Thermal Characteristics
Symbol
R
ΘJC
R
ΘJC
R
ΘCS
Parameter
Junction-to-Case (IGBT Part, Per 1/2 Module)
Junction-to-Case (Diode Part, Per 1/2 Module)
Case-to-Heat Sink (Conductive grease applied)
Min
-
-
-
Typ
-
-
0.025
Max
0.20
0.3
-
Unit
℃/W
※ Data and
specifications
subject to change without any of notice
-2-
Preliminary
Fig.1, Output characteristic (typical)
I
C
= f(T
VJ
)
V
GE
= 15V
SIM200D06AV2
Output characteristic (typical)
I
C
= f(V
GE
)
Tvj = 150℃
Fig.2,
Fig.3, Transfer characteristic (typical)
I
C
= f(T
VJ
)
V
CE
= 20V
Fig.4, Reverse bias safe RBSOA)
I
C
= f(V
GE
)
V
GE
=
±15V,
R
Goff
= 2.4Ω, Tvj = 150℃
Fig.5, Forward characteristic of diode (typical)
I
F
= f(T
VJ
)
-3-
Preliminary
Package Outline
(dimensions in mm)
SIM200D06AV2
E2
C1
C2E1
Data and specifications subject to change without any of notice
JULY 2008
Headquarter:
#602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu,
Bucheon-City, S.KOREA
Tel)+82-32-234-4781,
Fax)+82-32-234-4789
Sales & Marketing
clzhang@semwiell.com
sales@semiwell.com
-4-
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
