Preliminary
SIM75D06AV1
V
CES
= 600V
Ic= 75A
V
CE(ON)
typ. = 1.5V
@Ic= 75A
“HALF-BRIDGE” IGBT MODULE
Feature
▪
Smart field stopper +Trench
design technology
▪
Low V
CE
(sat)
▪
Low Turn-off losses
▪
Short tail current for over 20KHz
Applications
▪
Motor controls
▪
VVVF inverters
▪
Inverter-type welding MC over 18KHZ
▪
SMPS, Electrolysis
▪
UPS/EPS, Robotics
Package : V1
Absolute Maximum Ratings
@ Tj=25℃ (Per Leg)
Symbol
V
CES
V
GES
I
C
I
CP
I
F
I
FM
t
p
V
iso
Tj
Tstg
Weight
Md
Parameter
Collector-to-Emitter Voltage
Gate emitter voltage
Continuous Collector Current
Pulsed collector current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short circuit test, V
GE
= 15V, V
CC
= 360V
Isolation Voltage test
Junction Temperature
Storage Temperature
Weight of Module
Mounting torque with screw : M5
Terminal connection torque : M5
T
C
=
25℃
Condition
Ratings
600
±
20
Unit
V
V
A
A
A
A
㎲
V
℃
℃
g
N.m
N.m
T
C
= 80℃
(25℃)
T
C
=
25℃
T
C
= 80℃
(25℃)
T
C
=
25℃
T
C
= 150℃
(25℃)
AC @ 1 minute
75 (100)
140
75 (100)
140
6 (8)
2500
-40 ~ 150
-40 ~ 125
190
2.0
2.0
Static Characteristics
@ Tj = 25℃ (unless otherwise specified)
Parameters
V
CE(ON)
V
GE(th)
I
CES
I
GES
V
F
R
GINT
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
Integrated gate resistor
ㅡ
ㅡ
ㅡ
Min
Typ
1.50
Max
Unit
V
Test conditions
I
C
= 75A
,
V
GE
= 15V
V
CE
= V
GE,
I
C
= 4㎃
5.8
ㅡ
ㅡ
1.6
4
5.0
400
2.0
㎃
㎁
V
V
GE
= 0V, V
CE
= 600V
V
CE
= 0V, V
GE
=
20V
I
F
= 75A, V
GE
= 0V
ㅡ
ㅡ
Ω
-1-
Preliminary
SIM75D06AV1
Electrical Characteristic Values (IGBT / DIODE)
@ Tj = 25℃ (unless otherwise specified)
Parameters
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
RRM
I
RM
t
rr
Q
rr
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse leakage current
Reverse Recovery Time
Reverse Recovery Charge
Min
ㅡ
ㅡ
ㅡ
ㅡ
ㅡ
ㅡ
ㅡ
600
ㅡ
ㅡ
ㅡ
Typ
4700
300
145
25
18
210
60
ㅡ
ㅡ
125
7.6
Max
ㅡ
Unit
Test conditions
V
CE
= 25V , V
GE
=
0V
ㅡ
ㅡ
ㅡ
ㅡ
pF
f = 1 MHz
Inductive Switching (125℃)
V
CC
= 300V
ns
I
C
= 75A, V
GE
=
±15V
R
G
= 1.2
Ω
V
㎂
ns
µC
V
R
= 600V
I
F
= 75A, V
R
= 300V
di / dt = 2000A /
㎲
ㅡ
ㅡ
ㅡ
250
ㅡ
ㅡ
※ Data and
specifications
subject to change without notice.
Thermal Characteristics
Symbol
R
ΘJC
R
ΘJC
R
ΘCS
Parameter
Junction-to-Case (IGBT Part, Per 1/2 Module)
Junction-to-Case (Diode Part, Per 1/2 Module)
Case-to-Heat Sink (Conductive grease applied)
Min
-
-
-
Typ
-
-
0.05
Max
0.60
0.98
-
Unit
℃/W
-2-
Preliminary
SIM75D06AV1
Fig 1. Typ. IGBT Output Characteristics
Fig 2. Typ. IGBT Out Characteristics
Fig 3. Typ. Transfer Characteristics
Fig 4. Reverse Bias Operating Area
Fig 5. Forward Characteristics of Diode
Fig 6. Operating Frequency vs Collector Current
-3-
Preliminary
Package Outline
(dimensions in mm)
SIM75D06AV1
JUNE 2008
Headquarter:
#602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu,
Bucheon-City, S.KOREA
Tel)+82-32-234-4781,
Fax)+82-32-234-4789
Sales & Marketing
clzhang@semwiell.com
sales@semiwell.com
-4-
模拟电子
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