Ｒ １ ２ ４ SERIES
ＴＰ３Ｘ
〈
Transistor
〉
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
DESCRIPTION
RT1P234X is a one chip transistor
with built-in bias resistor,NPN type is RT1N234X.
RT1P234U
1.6
OUTLINE DRAWING UNIT：m
m
RT1P234C
2.5
0.4
0.5
1.5
0.5
FEATURE
・
Built-in bias resistor (R1=2.2kΩ,R2=10kΩ).
0.5
0.4
0.8
0.3
①
②
③
2.9
1.90
0.95 0.95
①
②
③
1.6
1.0
APPLICATION
Inverted circuit,switching circuit,interface circuit,
driver circuit.
0.7
0.15
1.1
0.55
0.8
0.16
0∼0.1
R1
B
(IN)
R2
C
(OUT)
JEITA
：−
JEDEC
：−
Terminal Connector
①
：Base
②
：Emitter
③
：Collector
RT1P234M
2.1
0.425
1.25
0.425
JEITA
：SC-59
JEDEC
：Similar to TO-236
Terminal Connector
①
：Base
②
：Emitter
③
：Collector
RT1P234S
4.0
E
(GND)
2.0
1.3
0.65 0.65
0.3
3.0
0∼0.1
Equivalent circuit
0.5
①
②
③
14.0
1.0
1.0
0.1
0.45
1.27 1.27
0.9
0.15
0.4
2.5
①
②
③
0.7
JEITA
：SC-70
JEDEC
：−
Terminal Connector
①
：Base
②
：Emitter
③
：Collector
0∼0.1
JEITA
：−
JEDEC
：−
Terminal Connector
①
：Emitter
②
：Collector
③
：Base
ISAHAYA ELECTRONICS CORPORATION
0.4
Ｒ １ ２ ４ SERIES
ＴＰ３Ｘ
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＢＯ
Ｃ
Ｖ
ＢＯ
Ｅ
Ｖ
ＥＯ
Ｃ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ
½
Ｔ½
½½
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1P234U
RATING
RT1P234M
RT1P234C
-50
-6
-50
-100
-200
200
+150
-55∼+150
〈
Transistor
〉
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
RT1P234S
UNIT
V
V
V
mA
mA
mW
℃
℃
LIMIT
TYP
150
+150
-55∼+150
450
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
ＢＲ）ＣＥＯ
（
Ｉ
ＣＢＯ
½
Ｅ
Ｆ
Ｖ
Ｅ ½½
Ｃ （ ½）
Ｖ
（ Ｎ
ＩＯ ）
Ｖ
（ Ｆ ）
ＩＯ Ｆ
Ｒ
１
Ｒ ／Ｒ
１
２
½
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
TEST CONDITION
I
C
=-100μA，R
BE
=∞
V
CB
=-50V，I
E
=0
V
CE
=-5V，I
C
=-10mA
I
C
=-10mA，I
B
=-0.5mA
V
CE
=-0.2V，I
C
=-5mA
V
CE
=-5V，I
C
=-100μA
MIN
-50
33
-0.1
-0.8
-0.7
2.2
4.7
150
-0.3
-1.4
2.9
5.6
MAX
-0.1
UNIT
V
μA
−
V
V
V
kΩ
MHz
-0.5
1.5
3.8
V
CE
=-6V，I
E
=10mA
TYPICAL CHARACTERISTICS
INPUT ON VOLTAGE
VS.COLLECTOR CURRENT
D C F O R W A R D C U R R E N T G A IN
VS.COLLECTOR CURRENT
-10
DC FORWARD CURRENT GAIN
Ｆ
½
Ｅ
INPUT ON VOLTEGE
I(ON)
（ ）
Ｖ
Ｖ
1000
V
CE
=-0.2V
V
CE
=-5V
-1
100
-0.1
-1
-10
-100
COLLECTOR CURRENT
Ｃ
（ ）
Ｉ ½Ａ
COLLECTOR CURRENT
VS.INPUT OFF VOLTAGE
10
-1
-10
-100
COLLECTOR CURRENT
Ｃ
（ ）
Ｉ ½Ａ
-1000
COLLECTOR CURRENT
Ｃ
μＡ
Ｉ（ ）
V
CE
=-5V
-100
-10
0
-0.4
-0.8
-1.2
-1.6
-2
INPUT OFF VOLTAGE
ＩＯＦ ）
Ｖ
Ｖ
（ Ｆ
（ ）
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·
ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
Notes regarding these materials
·
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·
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originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·
All information contained in these materials, including product data, diagrams and charts, represent information on products
at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
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Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
herein.
·
ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
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h
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Jan.2003
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