RT1N237X SERIES
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
RT1N237X is a one chip transistor
with built-in bias resistor,PNP type is RT1P237X.
0.4
OUTLINE
RT1N237U
1.6
0.8
0.4
DRAWING
RT1N237C
2.5
1.5
0.5
UNIT:mm
0.5
FEATURE
0.95
0.5
2.9
1.90
①
②
③
0.3
・Built-in bias resistor (R1=2.2kΩ,R2=47kΩ).
1.6
1.0
①
②
③
APPLICATION
0.7
0.15
0.8
0.16
Inverted circuit,switching circuit,interface circuit,
driver circuit.
0.5
R1
B
(IN)
R2
C
(OUT)
JEITA:-
JEDEC:-
Terminal Connector
①:Base
②:Emitter
③:Collector
0½0.1
JEITA:SC-59
JEDEC:Similar to TO-236
Terminal Connector
①:Base
②:Emitter
③:Collector
E
(GND)
RT1N237M
RT1N237S
4.0
0.425
2.1
1.25
0.425
RT1N237T
0.2
0.8
0.2
0½0.1
Equivalent circuit
0.55
1.1
0.95
0.4
0.65
1.0
2.0
1.3
0.4
0.1
0.45
1.2
0.8
①
②
③
0.3
①
②
③
14.0
0.65
1.0
1.27 1.27
0.9
0.4
0.7
0.15
①
②
③
JEITA:-
JEDEC:-
Terminal Connector
①:Emitter
②:Collector
③:Base
JEITA:SC-70
JEDEC:-
Terminal Connector
①:Base
②:Emitter
③:Collector
0½0.1
2.5
0.45
JEITA:-
JEDEC:-
Terminal Connector
①:Base
②:Emitter
③:Collector
ISAHAYA ELECTRONICS CORPORATION
0.25
3.0
0.4
RT1N237X SERIES
MAXIMUM RATING (Ta=25℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T½
T½½½
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1N237T
RT1N237U
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
125
(※ )
+125
-55½+125
150
RATING
RT1N237M RT1N237C
50
6
50
100
200
200
+150
-55½+150
RT1N237S
450
UNI
T
V
V
V
mA
mA
mW
℃
℃
(※ ) package mounted on 9mm×19mm×1mm glass-epoxy substrate.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
V
(BR)CEO
I
CBO
½
FE
V
CE(½½½)
V
I(ON)
V
I(OFF)
R
1
R
2
/R
1
½
T
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
TEST CONDITION
I
C
=100μA,R
BE
=∞
V
CB
=50V,I
E
=0
V
CE
=5V,I
C
=10mA
I
C
=10mA,I
B
=0.5mA
V
CE
=0.2V,I
C
=5mA
V
CE
=5V,I
C
=100μA
MIN
50
80
0.7
0.6
2.2
22
200
0.3
1.1
2.9
LIMIT
TYP
MAX
0.1
UNIT
V
μA
-
V
V
V
kΩ
MHz
0.5
1.5
V
CE
=6V,I
E
=-10mA
D C F OR W A R D C U R R EN T G A IN
V S. C OL L EC TOR C U R R EN T
TYPICAL CHARACTERISTICS
IN P U T ON V OL TA GE
V S. C OL L EC TOR C U R R EN T
10
DC FORWARD CURRENT GAIN ½
FE
INPUT ON VOLTEGE V
I(ON)
(V)
1000
V
CE
=0.2V
V
CE
=5V
1
100
0.1
1
10
COLLECTOR CURRENT I
C
(½A)
C OL L EC TOR C U R R EN T
V S. IN P U T OF F V OL TA GE
10
100
1
10
COLLECTOR CURRENT I
C
(½A)
100
1000
COLLECTOR CURRENT I
C
(μA)
V
CE
=5V
100
10
0
0.4
0.8
1.2
1.6
INPUT OFF VOLTAGE V
I(OFF)
(V)
2
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·
ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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·
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·
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herein.
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under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
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h
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Jan.2003