MIC4102
100V Half-Bridge MOSFET Driver
with Anti-Shoot-Through Protection
Features
• Drives High- and Low-Side N-Channel MOSFETs
with Single Input
• Adaptive Anti-Shoot-Through Protection
• Low-Side Drive Disable Pin
• Bootstrap Supply Voltage to 118V DC
• Supply Voltage up to 16V
• TTL Input Thresholds
• On-Chip Bootstrap Diode
• Fast 30 ns Propagation Times
• Drives 1000 pF Load with 10 ns Rise and Fall
Times
• Low Power Consumption
• Supply Undervoltage Protection
• 2.5Ω Pull-Up, 1.5Ω Pull-Down Output Resistance
• Space Saving SOIC-8L Package
• –40°C to +125°C Junction Temperature Range
General Description
The MIC4102 is a high frequency, 100V half-bridge
MOSFET driver IC featuring internal anti-shoot-through
protection. The low-side and high-side gate drivers are
controlled by a single input signal to the PWM pin. The
MIC4102 implements adaptive anti-shoot-through
circuitry to optimize the switching transitions for
maximum efficiency. The single input control also
reduces system complexity and greatly simplifies the
overall design.
The MIC4102 also features a low-side drive disable
pin. This gives the MIC4102 the capability to operate in
a non-synchronous buck mode. This feature allows the
MIC4102 to start up into applications where a bias
voltage may already be present without pulling the
output voltage down.
Undervoltage protection on both the low-side and
high-side supplies forces the outputs low. An on-chip
bootstrap diode eliminates the discrete diode required
with other driver ICs.
The MIC4102 is available in the SOIC-8L package with
a junction operating range from –40°C to +125°C.
Applications
•
•
•
•
•
•
High Voltage Buck Converters
Networking/Telecom Power Supplies
Automotive Power Supplies
Current-Fed Push-Pull Power Topologies
Ultrasonic Drivers
Avionic Power Supplies
Typical Application Schematic
MIC4102
SOIC-8L
9V TO 16V BIAS
100V SUPPLY
VDD
HB
MIC4102
PWM
CONTROLLER
HI
LS
HO
V
OUT
HS
GND
LO
2016 Microchip Technology Inc.
DS20005575A-page 1
MIC4102
Functional Block Diagram
MIC4102
HV
HB
2
LEVEL
SHIFT
HO
3
HS
4
UVLO
DRIVER
PWM
5
V
DD
1
UVLO
LEVEL
SHIFT
LO
8
DRIVER
LS
6
V
SS
7
DS20005575A-page 2
2016 Microchip Technology Inc.
MIC4102
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage (V
DD
, V
HB
– V
HS
) .............................................................................................................. –0.3V to +18V
Input Voltages (V
PWM
, V
LS
)...............................................................................................................–0.3V to V
DD
+ 0.3V
Voltage on LO (V
LO
)..........................................................................................................................–0.3V to V
DD
+ 0.3V
Voltage on HO (V
HO
).................................................................................................................V
HS
– 0.3V to V
HB
+ 0.3V
Voltage on HS (Continuous).........................................................................................................................–1V to +110V
Voltage on HB ......................................................................................................................................................... +118V
Average Current in V
DD
to HB Diode ....................................................................................................................100 mA
ESD Rating .............................................................................................................................................................Note
1
Operating Ratings ‡
Supply Voltage (V
DD
) .................................................................................................................................... +9V to +16V
Voltage on HS ............................................................................................................................................. –1V to +100V
Voltage on HS (Repetitive Transient) .......................................................................................................... –5V to +105V
HS Slew Rate........................................................................................................................................................ 50 V/ns
Voltage on HB .............................................................................................................................. V
HS
+ 8V to V
HS
+ 16V
and ............................................................................................................................................. V
DD
– 1V to V
DD
+ 100V
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
‡ Notice:
The device is not guaranteed to function outside its operating ratings.
Note 1:
Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5 kΩ in series
with 100 pF.
2016 Microchip Technology Inc.
DS20005575A-page 3
MIC4102
TABLE 1-1:
ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
V
DD
= V
HB
= 12V; V
SS
= V
HS
= 0V; No load on LO or HO; T
A
= +25°C; unless noted.
Bold
values are valid for –40°C
≤
T
J
≤
+125°C.
(Note
1).
Parameters
Supply Current
V
DD
Quiescent Current
V
DD
Operating Current
Total HB Quiescent Current
Total HB Operating Current
HB to V
SS
Quiescent Current
Input Pins (TTL)
Low Level Input Voltage Threshold
High Level Input Voltage Threshold
Input Pull-Down Resistance
Undervoltage Protection
V
DD
Rising Threshold
V
DD
Threshold Hysteresis
HB Rising Threshold
HB Threshold Hysteresis
Bootstrap Diode
Low-Current Forward Voltage
High-Current Forward Voltage
Dynamic Resistance
LO Gate Driver
Low Level Output Voltage
High Level Output Voltage
Peak Sink Current
Peak Source Current
Note 1:
2:
3:
V
OLL
V
OHL
I
OHL
I
OLL
—
—
—
—
—
—
0.18
—
0.25
—
3
2
0.3
0.4
0.3
0.45
—
—
V
V
A
A
I
LO
= 160 mA
I
LO
= –100 mA,
V
OHL
= V
DD
– V
LO
V
LO
= 0V
V
LO
= 12V
V
DL
V
DH
R
D
—
—
—
—
—
—
0.4
—
0.7
—
1.0
—
0.55
0.70
0.8
1.0
1.5
2.0
V
V
Ω
I
VDD-HB
= 100 µA
I
VDD-HB
= 100 mA
I
VDD-HB
= 100 mA
V
DDR
V
DDH
V
HBR
V
HBH
6.5
—
6.0
—
7.3
0.5
7.0
0.4
8.0
—
8.0
—
V
V
V
V
—
—
—
—
V
IL
V
IH
R
I
0.8
—
100
1.5
1.5
200
—
2.2
500
V
V
kΩ
—
—
—
I
DD
I
DDO
I
HB
I
HBO
I
HBS
—
—
—
—
—
—
—
—
—
—
150
—
3
—
25
—
1.5
—
0.05
—
450
600
3.5
4.0
150
200
2.5
3
1
30
µA
mA
µA
mA
µA
PWM = 0V
f = 500 kHz
PWM = 0V
f = 500 kHz
V
HS
= V
HB
= 110V
Sym.
Min.
Typ.
Max.
Units
Conditions
Specification for packaged product only.
All voltages relative to Pin 7, V
SS
, unless otherwise specified.
Guaranteed by design. Not production tested.
DS20005575A-page 4
2016 Microchip Technology Inc.
MIC4102
TABLE 1-1:
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics:
V
DD
= V
HB
= 12V; V
SS
= V
HS
= 0V; No load on LO or HO; T
A
= +25°C; unless noted.
Bold
values are valid for –40°C
≤
T
J
≤
+125°C.
(Note
1).
Parameters
HO Gate Driver
Low Level Output Voltage
High Level Output Voltage
Peak Sink Current
Peak Source Current
V
OLH
V
OHH
I
OHH
I
OLH
—
—
—
—
—
—
—
—
—
—
—
—
—
1
—
—
—
—
120
0.22
—
0.25
—
3
2
30
—
1.7
30
—
45
—
2.5
30
—
36
—
250
0.3
0.4
0.3
0.45
—
—
45
60
—
50
60
65
70
4
60
70
45
70
450
V
V
A
A
I
HO
= 160 mA
I
HO
= –100 mA,
V
OHH
= V
HB
– V
HO
V
HO
= 0V
V
HO
= 12V
Sym.
Min.
Typ.
Max.
Units
Conditions
Switching Specifications (Anti-Shoot-Through Circuitry)
Delay between PWM going high to
LO going low
Voltage threshold for LO MOSFET
to be considered OFF
Delay between LO OFF to HO
going High
Delay between PWM going Low to
HO going low
Switch Node Voltage Threshold
when HO turns off
Delay between HO MOSFET being
considered off to LO turning ON
Delay between LS going low and
LO turning OFF
Forced LO ON, if V
LOTH
is not
detected
Switching Specifications
Either Output Rise Time (3V to 9V)
Either Output Fall Time (3V to 9V)
Either Output Rise Time (3V to 9V)
Either Output Fall Time (3V to 9V)
Minimum Input Pulse Width that
changes the output with LS = 5V
Minimum Output Pulse Width on
HO with min pulse width on PWM
with LS = 5V
Note 1:
2:
3:
t
R
t
F
t
R
t
F
t
PW
t
PW
—
—
—
—
—
—
—
—
10
6
0.33
—
0.2
—
40
15
—
—
0.6
0.8
0.3
0.4
60
ns
ns
µs
µs
ns
ns
C
L
= 1000 pF
C
L
= 1000 pF
C
L
= 0.1 µF
C
L
= 0.1 µF
C
L
= 0,
Note 3
C
L
= 0,
Note 3
t
LOOFF
V
LOOFF
t
HOON
t
HOOFF
V
SWth
t
LOON
t
LSOFF
t
SWTO
ns
V
ns
ns
V
ns
ns
ns
—
—
—
—
—
—
C
L
= 1000 pF
—
—
Specification for packaged product only.
All voltages relative to Pin 7, V
SS
, unless otherwise specified.
Guaranteed by design. Not production tested.
2016 Microchip Technology Inc.
DS20005575A-page 5
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