epitex
♦Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Chip Dimension
(3) Chip Number
(4) Peak Wavelength
4) Package
(1) Lead Frame Die
(2) Package Resin
(3) Lens
Opto-Device & Custom LED
High Power Top LED SMB770-1100-01
Lead ( Pb ) Free Product – RoHS Compliant
SMB770-1100-01
High Power Top LED
SMB770-1100-01
AlGaAs
1000um*1000um
1pce
770nm typ.
Silver Plated on Copper
PPA Resin
Epoxy Resin
High Power type Top LED with Lens
♦Outer
dimension (Unit: mm)
SMB770-1100-01 is an AlGaAs LED mounted on copper heat sink with a
5*5
mm package
These devices are available to be operated and 2,700mW/sr at IFP=3A.
anode
cathode
land pattern for solder
a1 a2 a3
a1 a2 a3
heatsink
c1 c2 c3
c1 c2 c3
♦Absolute
Maximum Ratings
Item
Power Dissipation
Forward Current
Pulse Forward Current
Reverse Voltage
Thermal Resistance
Junction Temperature
Operating Temperature
Storage Temperature
Soldering Temperature
Symbol
P
D
I
F
I
FP
V
R
R
thja
T
j
T
OPR
T
STG
T
SOL
Maximum Rated Value
2500
800
3000
5
10
100
-30 ~ +85
-30 ~ +100
255
Unit
mW
mA
mA
V
K/W
°C
°C
°C
°C
Ambient Temperature
Ta=25°C
Ta=25°C
Ta=25°C
Ta=25°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 5 seconds at 255°C
♦Electro-Optical
Characteristics [Ta=25°C]
Item
Forward Voltage
Radiated Power
Radiant Intensity
Peak Wavelength
Half Width
Viewing Half Angle
Rise Time
Fall Time
Symbol
V
F
V
FP
P
O
I
E
λ
P
∆λ
θ
1/2
tr
tf
Condition
I
F
=800mA
I
FP
=4A
I
F
=800mA
I
FP
=3A
I
F
=800mA
I
FP
=3A
I
F
=800mA
I
F
=800mA
I
F
=800mA
I
F
=800mA
I
F
=800mA
Minimum
Typical
2.0
3.5
330
1250
720
2700
770
25
±7
80
80
Maximum
2.5
Unit
V
V
mW
mW/sr
nm
nm
deg.
ns
ns
‡Radiated Power is measured by S3584-08.
‡Radiant Intensity is measured by Tektronix J-6512.
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail: sales-dep@epitex.com
http://www.epitex.com
epitex
10000
8
6
4
2
Opto-Device & Custom LED
High Power Top LED SMB770-1100-01
Lead ( Pb ) Free Product – RoHS Compliant
Forward Curent - Forward Voltage
(ta=25°C, tw=10us, Duty=1%)
Relative Radiant Intensity -
Forward Current
100
8
6
4
2
1000
Relative Radiant Intensity (A.U.)
Forward Current (mA)
(ta=25°C, tw=10us,
Duty=1%)
50mA Standard
8
6
4
2
10
8
6
4
2
100
8
6
4
2
1
8
6
4
2
10
1.0
2.0
3.0
4.0
Forward Voltage (V)
0.1
10
2
4 6
2
4 6
2
4 6
100
1000
Forward Current (mA)
10000
Forward Currrent-Pulse Duration
10
4
Allowable Forward Current -
Ambient Temperature
1000
Pulse Forward Current (mA)
6
5
4
3
2
Allowable Forward Current (mA)
Rthja=10K/W
800
600
10
3
400
6
5
4
3
200
100Hz
10Hz
1kHz
2
10kHz
1Hz
10
0.001
2
0
0
20
40
60
80
100
0.1
10
1000
Ambient Temperature (°C)
Duration (ms)
Relative Spectral Emission
1.0
(ta=25°C)
Relative Radiant Intensity (A.U.)
0.8
0.6
0.4
0.2
0.0
720
740
760
780
800
Wavelength (nm)
820
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail: sales-dep@epitex.com
http://www.epitex.com
epitex
2.5
Opto-Device & Custom LED
High Power Top LED SMB770-1100-01
Lead ( Pb ) Free Product – RoHS Compliant
Forward Voltage -
Ambient Temperture
10
6
5
4
3
2
Relative Radiant Intensity -
Ambient Temperature
2.0
If=50mA
1.5
Relative Radiant Intensity (A.U.)
Forward Voltage (V)
1
6
5
4
3
2
If=50mA
1.0
0.5
0.0
0
20
40
60
80
Ambient Temperatture (°C)
0.1
0
20
40
60
80
Ambient Temperature (°C)
Peak Wavelength -
Ambient Temperature
820
800
Peak Wavelength (nm)
If=50mA
780
760
740
720
0
20
40
60
80
100
Ambient Temperature (°C)
½Wrapping
Moisture barrier bag aluminum laminated film with a desiccant to keep out the moisture absorption during
the transportation and storage.
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail: sales-dep@epitex.com
http://www.epitex.com
epitex
Radiation Pattern
1.0
Opto-Device & Custom LED
High Power Top LED SMB770-1100-01
Lead ( Pb ) Free Product – RoHS Compliant
SMB770-1100-01
1.0
SMB770-1100-02
±7
±10
0.8
Relative Radiant Intensity (A.U.)
0.8
Relative Radiant Intensity (A.U.)
0.6
0.6
0.4
0.4
0.2
0.2
0.0
-50
0
50
0.0
-50
0
50
Angle (deg.)
Angle (deg.)
SMB770-1100-03
1.0
1.0
SMB770-1100-04
±24
0.8
±10
Relative Radiant Intensity (A.U.)
0.8
0.6
Relative Radiant Intensity (A.U.)
-50
0
50
0.6
0.4
0.4
0.2
0.2
0.0
0.0
-50
0
50
Angle (deg.)
Angle (deg.)
SMB770-1100-05
1.0
1.0
SMB770R-1100
±40
Relative Radiant Intensity (A.U.)
Relative Radiant Intensity (A.U.)
0.8
0.8
±62
0.6
0.6
0.4
0.4
0.2
0.2
0.0
-50
0
50
0.0
-50
0
50
Angle (deg.)
Angle (deg.)
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail: sales-dep@epitex.com
http://www.epitex.com
epitex
Radiation Pattern
1.0
Opto-Device & Custom LED
High Power Top LED SMB770-1100-01
Lead ( Pb ) Free Product – RoHS Compliant
SMB770-1100-09
SHORT±21
LONG±44
Relative Radiant Intensity (A.U.)
0.8
0.6
0.4
0.2
0.0
-50
0
50
Angle (deg.)
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail: sales-dep@epitex.com
http://www.epitex.com
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