ＲＴ１Ｎ１４ＢＸ SERIES
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
RT1N14BX is a one chip transistor
with built-in bias resistor,PNP type is RT1P14BX.
RT1N14BU
1.6
OUTLINE
DRAWING
RT1N14BC
2.5
UNIT：mm
FEATURE
・Built-in bias resistor (R2=10kΩ).
0.5
0.4
0.8
0.4
0.5
1.5
0.5
0.3
①
②
③
0.95
①
②
③
2.9
1.90
1.6
1.0
APPLICATION
Inverted circuit,switching circuit,interface circuit,
driver circuit.
0.7
0.15
1.1
0.55
0.8
0.16
0½0.1
C
(OUT)
B
(IN)
JEITA：－
JEDEC：－
Terminal Connector
①：Base
②：Emitter
③：Collector
RT1N14BM
2.1
0.425
1.25
0.425
JEITA：SC-59
JEDEC：Similar to TO-236
Terminal Connector
①：Base
②：Emitter
③：Collector
RT1N14BS
4.0
R2
E
(GND)
0.65
0.3
3.0
0½0.1
Equivalent circuit
0.95
0.5
①
②
③
2.0
1.3
14.0
1.0
1.0
0.1
0.45
0.65
1.27 1.27
0.9
0.15
0.4
2.5
①
②
③
0.7
JEITA：SC-70
JEDEC：－
Terminal Connector
①：Base
②：Emitter
③：Collector
0½0.1
JEITA：－
JEDEC：－
Terminal Connector
①：Emitter
②：Collector
③：Base
ISAHAYA ELECTRONICS CORPORATION
0.4
ＲＴ１Ｎ１４ＢＸ SERIES
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ½
Ｔ½½½
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1N14BU
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
150
+150
-55½+150
RATING
UNIT
RT1N14BM
RT1N14BC
RT1N14BS
50
V
6
V
50
V
100
mA
200
mA
200
450 mW
+150
℃
-55½+150
℃
LIMIT
TYP
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
ＣＢＯ
½
ＦＥ
Ｖ
ＣＥ（½½½）
Ｒ
2
½
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Emitter-base resistance
Gain band width product
TEST CONDITION
I
C
=100μA，R
BE
=∞
V
CB
=50V，I
E
=0
V
CE
=5V，I
C
=5mA
I
C
=10mA，I
B
=0.5mA
V
CE
=6V，I
E
MIN
50
30
7
MAX
0.1
0.3
13
UNIT
V
μA
－
V
kΩ
MHz
=-10mA
10
200
TYPICAL CHARACTERISTICS
DC forward current gain-Collector current
1000
VCE=5V
Collector current-Input off voltage
1000
VCE=5V
DC forward current gain hFE
100
Collector current IC[uA]
1
10
Collector current IC[mA]
100
100
10
10
0
0.5
1
Input off voltage VI(OFF)[V]
1.5
2
Input on voltage-Collector current
10
VCE=200mV
Input on voltage VI(ON)[V]
1
0.1
0.1
1
10
100
Collector current IC[mA]
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·
ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
Notes regarding these materials
·
These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the
customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging
ISAHAYA or third party.
·
ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights ,
originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·
All information contained in these materials, including product data, diagrams and charts, represent information on products
at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics
Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
herein.
·
ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,
such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
·
The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these
materials.
·
If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a
license from the Japanese government and cannot be imported into a country other than the approved destination. Any
diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is
h
prohibited.
·
Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these
materials or the products contained therein.
Jan.2003
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