PD - 96055
IRLR7807ZCPbF
IRLU7807ZCPbF
Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
Lead-Free
Benefits
l
l
l
HEXFET
®
Power MOSFET
V
DSS
30V
R
DS(on)
max Q
g
(typ)
13.8m
:
7.0nC
Very Low RDS(on) at 4.5V V
GS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRLR7807ZCPbF
I-Pak
IRLU7807ZCPbF
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
Units
V
g
Maximum Power Dissipation
g
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
f
30
f
43
170
40
20
± 20
A
W
0.27
-55 to + 175
W/°C
°C
300 (1.6mm from case)
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
Typ.
Max.
3.75
50
110
Units
°C/W
gÃ
–––
–––
–––
Notes
through
are on page 11
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1
02/23/06
IRLR/U7807ZCPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
51
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
23
11
14.5
1.8
-4.5
–––
–––
–––
–––
–––
7.0
1.8
0.7
2.7
1.8
3.4
4.0
7.1
28
9.8
3.5
780
180
100
–––
–––
V
Conditions
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 15A
13.8
18.2
2.25
–––
1.0
150
100
-100
–––
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
ns
nC
V
DS
= 15V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 12A
Clamped Inductive Load
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 12A
See Fig. 16
S
nA
V
mV/°C
µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 12A
V
GS
= 4.5V, I
D
e
= 12A
e
V
DS
= V
GS
, I
D
= 250µA
e
Avalanche Characteristics
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Ã
d
Typ.
–––
–––
–––
Max.
28
12
4.0
Units
mJ
A
mJ
Repetitive Avalanche Energy
–––
–––
–––
–––
–––
–––
–––
–––
23
14
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
43
f
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
T
J
= 25°C, I
F
= 12A, V
DD
= 15V
di/dt = 100A/µs
A
170
1.0
35
21
V
ns
nC
Ã
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRLR/U7807ZCPbF
1000
TOP
V
GS
ID, Drain-to-Source Current (A)
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
1000
ID, Drain-to-Source Current (A)
100
100
10
V
GS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
TOP
1
10
0.1
2.5V
0.01
1
2.5V
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
0.001
0.1
1
10
0.1
0.1
1
10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.0
2.0
ID, Drain-to-Source Current
(Α)
T J = 25°C
T J = 175°C
100.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 30A
VGS = 10V
1.5
10.0
1.0
1.0
VDS = 10V
20µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRLR/U7807ZCPbF
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds
C rss = C gd
C oss = C ds + C gd
SHORTED
12
ID= 12A
VGS, Gate-to-Source Voltage (V)
10
VDS= 24V
VDS= 15V
C, Capacitance (pF)
1000
Ciss
8
Coss
100
6
Crss
4
2
10
1
10
100
0
0
4
8
12
16
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
100.0
T J = 175°C
10.0
ID, Drain-to-Source Current (A)
100
10
100µsec
1.0
T J = 25°C
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1.0
10.0
1msec
10msec
100.0
1000.0
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRLR/U7807ZCPbF
50
LIMITED BY PACKAGE
40
2.5
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
2.0
30
ID = 250µA
20
1.5
10
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.0
-75 -50 -25
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJC )
D = 0.50
1
0.20
0.10
0.05
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
0.1
0.02
0.01
τ
J
Ri (°C/W)
τi
(sec)
τ
C
1.796
0.000267
τ
1.112
0.842
0.000607
0.004249
τ
1
τ
2
τ
3
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci= i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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