Provisional Data Sheet No. PD-9.1445
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTOR
-200 Volt, 0.8Ω, RAD HARD HEXFET
Ω
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 10
5
Rads (Si). Under
identical
pre- and post-radiation
test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in gate
drive circuitry is required. In addition these devices are also
capable of surviving transient ionization pulses as high as
1 x 10
12
Rads (Si)/Sec, and return to normal operation within
a few microseconds. Single Event Effect (SEE) testing of
International Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the
P-Channel RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can expect
the highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control,very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits in space and
weapons environments.
®
IRHN9230
P-CHANNEL
RAD HARD
Product Summary
Part Number
IRHN9230
BV
DSS
-200V
R
DS(on)
0.8Ω
I
D
-6.5A
Features:
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
n
Light-weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ V GS = -12V, TC = 100°C Continuous Drain Current
I DM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting
Surface Temperature
Weight
Notes: See page 4
Pre-Radiation
IRHN9230
-6.5
-4.0
-26
75
0.6
±20
150
-6.5
7.5
-5.0
-55 to 150
o
C
Units
A
W
W/K
V
mJ
A
mJ
V/ns
300 (for 5 seconds)
2.6 (typical)
g
IRHN9230 Device
Pre-Radiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min.
-200
—
—
—
-2.0
2.5
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
—
-0.22
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
TBD
—
—
0.8
0.92
-4.0
—
-25
-250
-100
100
45
10
25
50
90
90
90
—
V
V/°C
Ω
V
S( )
µA
nA
nC
Ω
Test Conditions
VGS = 0V, ID = -1.0 mA
Reference to 25°C, ID = -1.0 mA
VGS = -12V, ID = -4.0A
VGS = -12V, ID = -6.5A
VDS = VGS, I D = -1.0 mA
VDS > -15V, IDS = -4.0 A
VDS = 0.8 x Max. Rating,VGS = 0V
VDS = 0.8 x Max. Rating
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -12V, ID = -6.5A
VDS = Max. Rating x 0.5
VDD = 100V, ID = -6.5A, RG = 7.5Ω
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
ns
Measured from the
Modified MOSFET
drain lead, 6mm (0.25
symbol showing the
in.) from package to
internal inductances.
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
LS
Internal Source Inductance
—
TBD
—
nH
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1100
310
55
—
—
—
pF
VGS = 0V, VDS = -25V
f = 1.0 MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
I SM
VSD
t rr
Q RR
t on
Continuous Source Current
(Body Diode)
Pulse Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
—
—
—
—
-6.5
-26
Test Conditions
Modified MOSFET symbol
showing the integral Reverse
p-n junction rectifier.
A
—
—
-5.0
V
T
j
= 25°C, IS = -6.5A, VGS = 0V
—
—
400
ns
Tj = 25°C, IF = -6.5A, di/dt
≤
-100 A/µs
—
—
3.0
µC
VDD
≤
-50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min. Typ. Max. Units
—
—
—
TBD
1.67
—
K/W
Test Conditions
Soldered to a copper-clad PC board
Notes: See page 4
IRHN9230 Device
Radiation Performance of P-Channel Rad
Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The
hardness assurance program at International Rectifier
uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test method
1019. International Rectifier has imposed a standard
gate voltage of -12 volts per note 6 and a VDSS bias
condition equal to 80% of the device rated voltage per
note 7. Pre- and post-radiation limits of the devices
irradiated to 1 x 10
5
Rads (Si) are identical and are
presented in Table 1. The values in Table 1 will be met
for either of the two low dose rate test circuits that are
used.
Radiation Characteristics
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 10
5
Rads (Si), no change in limits are specified in DC
parameters.
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10
12
Rads
(Si)/Sec.
International Rectifier radiation hardened P-Channel
HEXFETs are considered to be neutron-tolerant, as
stated in MIL-PRF-19500 Group D. International
Rectifier P-Channel radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects environment the results are shown in Table 3.
Table 1. Low Dose Rate
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
IRHN9230
100K Rads (Si)
min.
-200
-2.0
—
—
—
—
—
max.
—
-4.0
-100
100
-25
0.8
-5.0
Units
V
nA
µA
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -1.0 mA
V
GS
= V
DS
, I
D
= -1.0 mA
V
GS
= -20V
V
GS
= 20V
V
DS
= 0.8 x Max Rating, V
GS
= 0V
V
GS
= -12V, I
D
= -4.0A
T
C
= 25°C, I
S
= -6.5A,V
GS
= 0V
Table 2. High Dose Rate
Parameter
VDSS
IPP
di/dt
L1
Drain-to-Source Voltage
10
11
Rads (Si)/sec10
12
Rads (Si)/sec
—
—
—
27
—
-160
—
—
-160
—
—
—
Min. Typ Max. Min.Typ. Max. Units
V
-60 —
-800 —
—
—
— -60
— -160
0.5 —
Test Conditions
Applied drain-to-source voltage
during gamma-dot
A
Peak radiation induced photo-current
A/µsec Rate of rise of photo-current
µH
Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Parameter
BV DSS
Typ.
-200
Units
V
Ion
Ni
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
1 x 10
5
Range
(µm)
~41
V
DS
Bias
(V)
-200
V
GS
Bias
(V)
+5
IRHN9230 Device
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
@ VDD = -50V, Starting TJ = 25°C,
EAS = [0.5 * L * (I
L
2
) * [BVDSS/(BVDSS-VDD)]
25
≤
RG
≤
200
Ω
, IL = -6.5A, VGS = -12V
ISD
≤
-6.5A, di/dt
≤
-140 A/µs,
VDD
≤
BV DSS, TJ
≤
150°C
Pulse width
≤
300
µs;
Duty Cycle
≤
2%
K/W = °C/W
W/K = W/°C
Radiation Characteristics
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and V GS = 0 during irradiation per
MlL-STD-750, method 1019.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
Process characterized by independent laboratory.
All Pre-Radiation and Post-Radiation test
conditions are identical to facilitate direct
comparison for circuit applications.
Case Outline and Dimensions — SMD-1
Notes:
1. Dimensioning and Tolerancing per ANSI Y14.5M-1982
2. Controlling Dimension: Inch
3. Dimensions are shown in millimeters (Inches)
4 Dimension includes metallization flash
5 Dimension does not include metallization flash
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Data and specifications subject to change without notice.
6/96
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