IRHG58110: 产品描述Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14; 产品类别分立半导体晶体管; 文件大小176KB，共8页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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IRHG58110概述

Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14

IRHG58110规格参数

参数名称	属性值
是否Rohs认证	不符合
包装说明	IN-LINE, R-CDIP-T14
Reach Compliance Code	compliant
ECCN代码	EAR99
其他特性	HIGH RELIABILITY
雪崩能效等级（Eas）	130 mJ
配置	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	100 V
最大漏极电流 (Abs) (ID)	1.6 A
最大漏极电流 (ID)	1.6 A
最大漏源导通电阻	0.29 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	MO-036AB
JESD-30 代码	R-CDIP-T14
JESD-609代码	e0
元件数量	4
端子数量	14
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	IN-LINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	1.4 W
最大脉冲漏极电流 (IDM)	6.4 A
认证状态	Not Qualified
表面贴装	NO
端子面层	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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PD-94432C

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (MO-036)

Product Summary

Part Number Radiation Level

IRHG57110 100K Rads (Si)

IRHG53110 300K Rads (Si)

IRHG54110

500K Rads (Si)

IRHG58110 1000K Rads (Si)

DS(on)

0.29Ω

0.31Ω

1.6A

IRHG57110

100V, Quad N-CHANNEL

TECHNOLOGY

MO-036AB

International Rectifier’s R5

technology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm

)). The combination

of low R

DS(on)

and low gate charge reduces the

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Low R

DS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

ESD Rating: Class 1A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings (Per Die)

Parameter

ID @ VGS = 12V, TC = 25°C

ID @ VGS = 12V, TC = 100°C

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

For footnotes refer to the last page

1.6

1.0

6.4

1.4

0.011

± 20

130

1.6

0.14

6.5

-55 to 150

Pre-Irradiation

Units

W/°C

V/ns

°C

300 (0.63 in./1.6 mm from case for 10s)

1.3 (Typical)

www.irf.com

07/07/15

IRHG58110相似产品对比

	IRHG58110	IRHG53110PBF	IRHG58110PBF	IRHG54110	IRHG54110PBF	IRHG57110	IRHG53110
描述	Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14	Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14	Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14	Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14	Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14	Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14	Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14
是否Rohs认证	不符合	符合	符合	不符合	符合	不符合	不符合
包装说明	IN-LINE, R-CDIP-T14	IN-LINE, R-CDIP-T14	IN-LINE, R-CDIP-T14	HERMETIC SEALED, CERAMIC PACKAGE-14	IN-LINE, R-CDIP-T14	HERMETIC SEALED, CERAMIC PACKAGE-14	IN-LINE, R-CDIP-T14
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	unknown	not_compliant
雪崩能效等级（Eas）	130 mJ	130 mJ	130 mJ	130 mJ	130 mJ	130 mJ	130 mJ
配置	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	100 V	100 V	100 V	100 V	100 V	100 V	100 V
最大漏极电流 (ID)	1.6 A	1.6 A	1.6 A	1.6 A	1.6 A	1.8 A	1.6 A
最大漏源导通电阻	0.29 Ω	0.29 Ω	0.29 Ω	0.29 Ω	0.29 Ω	0.29 Ω	0.29 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	MO-036AB	MO-036AB	MO-036AB	MO-036AB	MO-036AB	MO-036AB	MO-036AB
JESD-30 代码	R-CDIP-T14	R-CDIP-T14	R-CDIP-T14	R-CDIP-T14	R-CDIP-T14	R-CDIP-T14	R-CDIP-T14
元件数量	4	4	4	4	4	4	4
端子数量	14	14	14	14	14	14	14
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	6.4 A	6.4 A	6.4 A	6.4 A	6.4 A	6.4 A	6.4 A
表面贴装	NO	NO	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
ECCN代码	EAR99	-	-	EAR99	-	EAR99	EAR99
其他特性	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	-	HIGH RELIABILITY
最大漏极电流 (Abs) (ID)	1.6 A	-	-	1.6 A	-	1.8 A	1.6 A
JESD-609代码	e0	-	-	e0	-	e0	e0
最大功率耗散 (Abs)	1.4 W	-	-	1.4 W	-	1.4 W	1.4 W
认证状态	Not Qualified	-	-	Not Qualified	-	Not Qualified	Not Qualified
端子面层	Tin/Lead (Sn/Pb)	-	-	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Base Number Matches	1	1	1	1	1	-	-

IRHG58110

IRHG58110概述

IRHG58110规格参数

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IRHG58110相似产品对比

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