PD - 94695
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level R
DS(on)
IRHLF670Z4 100K Rads (Si)
0.5Ω
IRHLF630Z4 300K Rads (Si)
0.5Ω
IRHLF640Z4
IRHLF680Z4
600K Rads (Si)
1000K Rads (Si)
0.5Ω
0.5Ω
I
D
1.6A*
1.6A*
1.6A*
1.6A*
IRHLF670Z4
60V, N-CHANNEL
TECHNOLOGY
T0-39
International Rectifier’s R6
TM
Logic Level Power
Mosfets provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space
and other radiation environments. The threshold
voltage remains within accptable operating limits
over the full operating temperature and post radia-
tion. This is achieved while maintaining single event
gate rupture and single event burnout immunity.
These devices are used in applications such as cur-
rent boost low signal source in PWM, voltage com-
parator and operational amplifiers.
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Complimentary P-Channel Available -
IRHLF6970Z4
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25°C
Continuous Drain Current
1.6*
1.0*
6.4
5.0
0.04
±10
9.0
1.6
0.5
3.5
-55 to 150
ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
➁
IAR
EAR
dv/dt
TJ
T STG
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063in/1.6mm from case for 10s)
0.98 (Typical)
g
* Derated to match the Complimentary P-Channel Logic Level Power Mosfet -IRHLF6970Z4
For footnotes refer to the last page
www.irf.com
1
07/07/03
IRHLF670Z4
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
60
—
—
1.0
1.1
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.08
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
—
—
0.50
2.0
—
1.0
10
100
-100
3.6
1.5
1.8
8.0
20
20
15
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
VGS = 4.5V, ID = 1.0A
➃
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
VDS = VGS, ID = 250µA
VDS = 10V, IDS = 1.0A
➃
VDS= 48V ,VGS= 0V
VDS = 48V,
VGS = 0V, TJ =125°C
VGS = 10V
VGS = -10V
VGS = 5.0V, ID = 1.6A
VDS = 30V
VDD = 30V, ID = 1.6A,
VGS = 5.0V, RG = 24Ω
ns
nH
Measured from Drain lead (6mm /0.25in
from package) to Source lead(6mm/0.25in
from packge)with Source wire internally
bonded from Source pin to Drain pad
C iss
C oss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
—
—
—
—
152
39
1.6
14
—
—
—
—
pF
Ω
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 5.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
1.6*
6.4
1.2
100
150
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = 1.6A, VGS = 0V
➃
Tj = 25°C, IF = 1.6A, di/dt
≤
100A/µs
VDD
≤
25V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Derated to match the Complimentary P-Channel Logic Level Power Mosfet -IRHLF6970Z4
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
25
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHLF670Z4
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
➃
On-State Resistance (TO-39)
Diode Forward Voltage
➃
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Min
Max
Min
Max
60
1.0
—
—
—
—
—
—
2.0
100
-100
1.0
0.5
1.2
60
1.0
—
—
—
—
—
—
2.0
100
-100
10
0.5
1.2
V
nA
µA
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10V
V
GS
= -10 V
V
DS
= 48V, V
GS
=0V
V
GS
= 4.5V, I
D
= 1.0A
V
GS
= 0V, IS = 1.6A
1. Part numbers IRHLF670Z4, IRHLF630Z4 and IRHLF640Z4
2. Part number IRHLF680Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
(MeV/(mg/cm2))
Br
I
Au
37.3
59.9
82.3
Energy Range
(MeV)
285
345
357
(µm)
36.8
32.7
357
@VGS=
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V
60
60
60
-2V
60
60
60
-4V
60
60
60
-5V
60
60
60
-6V
60
60
-
-7V
35
20
-
-8V
30
15
-
-10V
20
-
-
70
60
50
40
30
20
10
0
0
-2
-4
-6
VGS
-8
-10
-12
Br
I
Au
For footnotes refer to the last page
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VDS
Fig a.
Single Event Effect, Safe Operating Area
3
IRHLF670Z4
Pre-Irradiation
10
ID, Drain-to-Source Current (A)
1
ID, Drain-to-Source Current (A)
VGS
TOP
7.5V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
10
VGS
7.5V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
TOP
1
2.25V
2.25V
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
10
2.0
T J = 150°C
TJ = 25°C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 1.6A
ID, Drain-to-Source Current (
Α)
1.5
1
1.0
0.5
0
2
2.5
3
VDS = 25V
15
60µs PULSE WIDTH
3.5
4
4.5
5
0.0
-60 -40 -20
V
GS
= 4.5V
0
20
40
60
80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHLF670Z4
250
V
GS
, Gate-to-Source Voltage (V)
200
V
GS
=
C
iss
=
C
rss
=
C
oss
=
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
12
I
D
= 1.6A
10
V
DS
= 48V
V
DS
= 30V
V
DS
= 12V
C, Capacitance (pF)
C
iss
150
8
C
oss
100
6
4
50
C
rss
0
1
10
100
2
0
0
1
2
FOR TEST CIRCUIT
SEE FIGURE 13
3
4
5
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
10
10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (
Α)
ID, Drain-to-Source Current (A)
1
T J = 150°C
T J = 25°C
100µs
1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1.0
10
0.1
VGS = 0V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD , Source-to-Drain Voltage (V)
0.1
10ms
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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