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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ
PA2793GR
SWITCHING
N- AND P-CHANNEL POWER MOS FET
DESCRIPTION
The
μ
PA2793GR is N- and P-channel MOS Field Effect
Transistors designed for Motor Drive application.
8
5
N-channel
1 : Source 1
2 : Gate 1
7, 8: Drain 1
P-channel
3 : Source 2
4 : Gate 2
5, 6: Drain 2
6.0 ±0.3
4.4
+0.10
–0.05
PACKAGE DRAWING (Unit: mm)
FEATURES
•
Low on-state resistance
N-channel R
DS(on)1
= 15 mΩ MAX. (V
GS
= 10 V, I
D
= 3.5 A)
R
DS(on)2
= 23 mΩ MAX. (V
GS
= 4.5 V, I
D
= 3.5 A)
P-channel R
DS(on)1
= 26 mΩ MAX. (V
GS
=
−10
V, I
D
=
−3.5
A)
1.44
1
5.37 MAX.
1.8 MAX.
4
R
DS(on)2
= 36 mΩ MAX. (V
GS
=
−4.5
V, I
D
=
−3.5
A)
•
Low input capacitance
N-channel C
iss
= 2200 pF TYP.
P-channel
C
iss
= 2200 pF TYP.
•
Built-in gate protection diode
•
Small and surface mount package (Power SOP8)
0.8
0.15
0.05 MIN.
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
Note
Note
PACKING
Tape 2500 p/reel
PACKAGE
Power SOP8
μ
PA2793GR-E1-AZ
μ
PA2793GR-E2-AZ
Sn-Bi
Note Pb-free (This product does not contain Pb in external electrode).
EQUIVALENT CIRCUITS
N-channel
Drain
P-channel
Drain
Gate
Body
Diode
Gate
Body
Diode
Gate
Protection
Diode
Source
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G18593EJ1V0DS00 (1st edition)
Date Published January 2007 NS CP(K)
Printed in Japan
2007
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