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UMD9NT2R

产品描述Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, UMT6, SC-88, 6 PIN
产品类别分立半导体    晶体管   
文件大小131KB,共4页
制造商ROHM(罗姆半导体)
官网地址https://www.rohm.com/
标准  
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UMD9NT2R概述

Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, UMT6, SC-88, 6 PIN

UMD9NT2R规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码SC-88
包装说明SMALL OUTLINE, R-PDSO-G6
针数6
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性BUILT-IN BIAS RESISTOR RATIO IS 4.7
最大集电极电流 (IC)0.07 A
集电极-发射极最大电压50 V
配置SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)68
JESD-30 代码R-PDSO-G6
JESD-609代码e2
元件数量2
端子数量6
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性/信道类型NPN AND PNP
认证状态Not Qualified
表面贴装YES
端子面层Tin/Copper (Sn/Cu)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间10
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)250 MHz
Base Number Matches1

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EMD9 / UMD9N / IMD9A
Transistors
Digital Transistor
(Dual Digital Transistors for Inverter Drive)
EMD9 / UMD9N / IMD9A
Features
1) DTA114Y and DTC114Y transistors are built-in a EMT
or UMT or SMT package.
External dimensions
(Unit : mm)
EMD9
0.22
(4)
(5)
(6)
(3)
(2)
0.13
EMD9 / UMD9N
(3)
(2)
R
1
IMD9A
(4)
(5)
R
1
(1)
R
2
DTr1
(6)
R
2
DTr1
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : D9
0.65
1.3
0.65
DTr2
R
2
R
1
DTr2
R
2
R
1
(4)
(5)
(6)
R
1
=10kΩ
R
2
=47kΩ
(3)
(2)
(1)
R
1
=10kΩ
R
2
=47kΩ
(4)
(3)
UMD9N
0.2
0.5
Equivalent circuit
1.2
1.6
(1)
0.5 0.5
1.0
1.6
0.8
1.1
0.95 0.95
1.9
2.9
0.7
(6)
1.25
0.15
Package, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMD9
EMT6
D9
T2R
8000
UMD9N
UMT6
D9
TR
3000
IMD9A
SMT6
D9
T108
3000
2.1
(1)
0.1Min.
0to0.1
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : D9
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
EMD9, UMD9N
IMD9A
Symbol
V
CC
V
IN
I
O
I
C (Max.)
Pd
Tj
Tstg
Limits
50
−6
to +40
70
100
150(TOTAL)
300(TOTAL)
150
−55
to +150
Unit
V
V
mA
mA
mW
mW
°C
°C
1
2
IMD9A
(6)
0.3
(4)
(5)
1.6
2.8
0.3to0.6
0to0.1
Junction temperature
Storage temperature
0.15
1
2
120mW per element must not be exceeded. PNP type negative symbols have been omitted.
200mW per element must not be exceeded. PNP type negative symbols have been omitted.
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : D9
Electrical characteristics
(Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
PNP type negative symbols have been omitted.
Characteristics of built-in transistor.
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
f
T
R
1
R
2
/R
1
Min.
1.4
68
7
3.7
Typ.
0.1
250
10
4.7
Max.
0.3
0.3
0.88
0.5
13
5.7
Unit
V
V
mA
mA
MHz
kW
Conditions
V
CC
=5V , I
O
=100mA
V
O
=0.3V , I
I
=1mA
I
O
=5mA , I
I
=0.25mA
V
I
=5V
V
CC
=50V , V
I
=0V
I
O
=5mA , V
O
=5V
V
CE
=10V , I
E
= −5mA
, f=100MHz
(3)
(2)
(1)
Rev.B
0.9
2.0
(5)
(2)
1/3

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