SMD Type Reflective Photo Sensor
Subminiature Photointerrupter
Description
The MIR-3307-TC11 consists of a Gallium Arsenide
infrared emitting diode and a NPN silicon phototran-
sistor built in a black plastic housing. It is a refl-
ective subminiature photointerrupter.
MIR-3307-TC11
Unit: mm
Package Dimensions
Features
Compact and thin
MIR-3307-TC11 : Compact DIP, SMD type
Optimum detecting diatance : 0.8 - 1.0 mm
Wavelength : 940nm
Visible light cut-off type
NOTE:
(1).Tolerance:±0.2mm
(2). ( ) Reference dimensions
Item
Lead Material
Mold Material
Content
The Cu System
Inner: Epoxy Resin
Outer:PPA
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Continuous Forward Current
INPUT
Reverse Voltage
Power Dissipation
Collector-emitter breakdown voltage
Symbol
I
F
V
R
P
ad
V
(BR)CEO
V
(BR)ECO
P
C
P
TOT
T
opr
T
stg
Minimum Rating Maximum Rating
-
-
-
30
5
-
-
50
5
80
-
-
75
100
-40
o
C
to + 85
o
C
-40
o
C
to + 85
o
C
Unit
mA
V
mW
V
V
mW
mW
OUTPUT
Emitter-Collector breakdown voltage
Collector power dissipation
Total power dissipation
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature (minimum 1.6mm from body) at 300
o
C within 2 sec
Unity Opto Technology Co., Ltd.
11/06/2003
MIR-3307-TC11
Optical-Electrical Characteristics
Parameter
Forward Voltage
Input
Reverse Current
Capacitance
Output
Collector Dark Current
Capacitance
*1
@ T
A
=25
o
C
symbol
V
F
I
R
Co
Iceo
C
CE
Ic
t
r
t
f
I
LEAK
V
CE(set)
Min.
-
-
-
-
-
45
-
-
-
-
Typ.
1.2
-
25
-
10
110
20
20
-
-
Max.
1.4
10
-
100
-
360
100
100
0.1
0.4
Unit.
V
µA
pF
nA
pF
µA
µS
µS
µA
V
Test Conditions
I
F
=20mA
V
R
=3V
V
R
=0V, f=1MHz
Vce =20V
V
CE
=5V, f=1MHz
I
F
=4mA, Vce =3V
Ic=100µA, Vce =2V
R
L
=1kΩ, d =1mm
I
F
=4mA, Vce =3V
I
F
=20mA, Ic =0.1mA
Collector Current
Transfer Cha-
Response Time (FALL)
racteristics
*2
Leak Current
Saturation Voltage
*2
WITHOUT REFLECTIVE OBJECT.
Response Time (RISE)
*1
THE CONDITION AND ARRANGEMENT OF THE REFLECTIVE OBJECT ARE SHOWN AS FOLLOWING .
TEST CONDITION AND ARRANGEMENT FOR COLLECTOR CURRENT
Al refletive Surface
1 mm-thick glass
Device
Typical Optical-Electrical Characteristic Curves
Forward Current I
F
(mA)
Power Dissipation (mW)
60
50
40
30
20
10
0
-25
0
25
50
75
o
120
100
80
60
40
20
0
-25
P
TOT
P
ad
, P
C
100
0
25
50
75
o
100
Ambient Temperature T
A
( C)
Fig.1 forward Current
VS
.
Ambient Temperature
Forward Current I
F
(mA)
Collector Current Ic (
µ
A)
50
40
30
20
10
0
0.0
0.5
1.0
1.5
600
500
400
300
200
100
0
0
Ambient Temperature T
A
( C )
Fig.2 Power Dissipation vs.
Ambient Temperature
Vce=5V
Ta=25
o
C
5
10
15
20
Forward Voltage V
F
(V)
Fig.3 Forward Current
VS
Forward Voltage
Forward Current I
F
(mA)
Fig.4 Collector Current vs.
Forward Current
Unity Opto Technology Co., Ltd.
11/06/2003
MIR-3307-TC11
Typical Optical-Electrical Characteristic Curves
Collector Current Ic (
µ
A)
350
300
250
200
150
100
50
0
0
2
4
6
8
10
12
1mA
Relative Collector Current (%)
Ta=25 C
I
F
=10mA
4mA
o
120
100
80
60
40
20
0
-25
0
25
50
75
o
100
Collector-Emitter Voltage Vce (V)
Fig.5 Collector Current vs. Vce
Collector Dark Current I
CEO
10
-6
10
-7
10
-8
10
-9
Ambient Temperature T
A
( C)
Fig.6 Relative Collector Current
VS
.
100
Response Time (
µ
s)
V
CE
=10V
t
r
t
r
t
d
10
1
0.1
0.01
t
s
V
CE
=2V
I
C
=100µA
T
a
=25
o
C
10
-10
0
25
50
75
o
100
0.1
1
10
Ambient Temperature T
A
( C)
Fig.7 Collector Dark Current vs.
Ambient Temperature
Relative Collector Current (%)
Relative Sensitivity (%)
100
80
60
40
20
0
700
800
900
1000
1100
1200
Ta=25
o
C
120
100
80
60
40
20
0
0
1
Load Resistance R
t
(KΩ)
Fig.8 Response Time vs.
Load Resistance
I
F
=4mA
V
CE
=5V
T
A
=25
o
C
2
3
4
5
6
7
8
9 10
Wavelength (nm)
Fig.9 Spectral Sensitivity (Detecting side)
Distance (mm)
Fig.10 Relative Collector Current vs. Distance
between MIR-3307 and Card
Test Circuit for Response Time
Vcc
Input R
D
R
L
Input
Output Output
10%
t
d
t
r
90%
t
f
t
s
Unity Opto Technology Co., Ltd.
11/06/2003
MIR-3307-TC11
Reliability Test Item
Test Item
Description and Test Condition
Evaluates resistance of the device when
operated at electrical stress Ta=under room
temperature Test Time=1000hrs
(-24hrs,+72hrs)
Evaluates moisture resistance of the device
when stored for a long term at high
temperature and high humidityTa=85±5
o
C
Rh=85±5%RhTest Time=1000hrs
(-24hrs,+72hrs)
Evaluates device durability for long term
storage in high temperature Ta=105
o
C
Test Time=1000hrs(-24hrs,+72hrs)
Evaluates device durability for long term
storage in low temperature Ta=-55
o
C
Test Time=1000hrs(-24hrs,+72hrs)
Reference Standard
MIL-STD-750:1026
MIL-STD-883:1005
JIS C 7021:B-1
Judgement
Operation Life
ACCEPT:
Power Decay <30%
High Temperature
High Humidity
MIL-STD-202:103B
JIS C 7021:B-11
ACCEPT:
None is
OPEN/SHORT
ACCEPT:
None is
OPEN/SHORT
ACCEPT:
None is
OPEN/SHORT
ACCEPT:
None is
OPEN/SHORT
High Temperature
Storage
Low Temperature
Storage
MIL-STD-883:1008
JIS C 7021:B-10
JIS C 7021:B-12
MIL-STD-202:107D
MIL-STD-750:1051
MIL-STD-883:1010
JIS C 7021:A-4
Evaluates resistance of device at thermal
stresses or expansion and contraction
Temperature Cycling
105
o
C ~ 25
o
C ~ -55
o
C ~ 25
o
C
30min 5min 30min 5min 20 Cycles
Thermal Shock
Evaluates device’s structure and mechanical
resistance when suddenly exposed at severe MIL-STD-202:107D
changes
MIL-STD-750:1051
o
o
MIL-STD-883:1011
105 C ~ -55 C
10min 10min 10 Cycles
MIL-STD-202:210A
MIL-STD-750:2031
JIS C 7021:A-1
ACCEPT:
None is
OPEN/SHORT
Reflow Soldering Reflow process : Condition is as follow
Heat Resistance Test page. Less than 2 time.
ACCEPT:
None is
OPEN/SHORT
Solderability
Evaluates solderability on leads of device
T.Sol=230
o
C
Dwell Time=5 sec
Phase1:110oC, 85%RH, 1.242kgf/cm
2
Phase2:130oC, 85%RH,2.714kgf/cm
2
Distance of Dropping : 1 m
Drop the Device on the Maple Board
3 Times
MIL-STD-202:208D
ACCEPT:
MIL-STD-750:2026
95% soldering areaon
MIL-STD-883:2003
the lead frame
JIS C 7021:A-2
-
ACCEPT:
None is
OPEN/SHORT
ACCEPT:
None is
OPEN/SHORT
PresureCooker Test
Drop Test
-
Unity Opto Technology Co., Ltd.
11/06/2003
MIR-3307-TC11
RECOMMENDED SOLDERING CONDITION
1. Reflow Soldering.
5 sec. MAX soldering time
240
o
C MAX
+ 5
o
C /sec. MAX
- 5
o
C /sec. MAX
160+10
o
C
90 - 120 sec
Preheating
1.a
1.b
The above temp. profile shall be at the surface of LED resin.
Number of reflow process should be less than 2 times.If the second reflow process is
performed, intervals between the first and the second process should be as short as possible
to prevent moisture absorption from LED resin. Cooling process to normal temp. is required
between the first and the second reflow process.
Temp. fluctuation to LED at pre-heat process should be minimized. ( less than 6
o
C )
1.c
2. Dip Soldering.
2.a. Preheat temp. for soldering : 120 - 150 C, 60 - 120 sec.
2.b. Soldering temp.: Temp. of soldering pot 300
o
C Max and soldering time less than 2 sec.
2.c. Number of dip soldering process must be less than 2 times and the process is performed in
sequrence. Cooling process to normal temp. will be required between the first and the second
soldering process.
o
Unity Opto Technology Co., Ltd.
11/06/2003
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