SUBMINIATURE
PHOTOINTERRUPTER
Description
The MIR-3305-P consists of a Gallium Arsenide in-
frared emitting diode and a NPN silicon phototran-
sistor built in a black plastic housing. It is a refl-
ective subminiature photointerrupter.
MIR-3305-P
Package Dimensions
Unit: mm
Features
Compact and thin
MIR-3305-P : Compact DIP, long lead type
Optimum detecting distance : 0.8 - 1.0 mm
TOP VIE W
Wavelength : 940nm
E mitter
D
C
Collector
Visible light cut-off type
Flat lead type
Anode
A
B
Ca thode
NOTE:
(1).Tolerance:±0.2mm
(2). ( ) Reference dimensions
Absolute Maximum Ratings
@ T
A
=25 C
Parameter
Continuous Forward Current
INPUT
Reverse Voltage
Power Dissipation
Collector-emitter breakdown voltage
OUTPUT Emitter-Collector breakdown voltage
Collector power dissipation
Total power dissipation
Operating Temperature Range
Storage Temperature Range
Symbol
I
F
V
R
P
ad
V
(BR)CEO
V
(BR)ECO
P
C
P
TOT
T
opr
T
stg
30
5
75
100
-25
o
C
to + 85
o
C
-40
o
C
to + 100
o
C
Minimum Rating Maximum Rating
50
5
75
Unit
mA
V
mW
V
V
mW
mW
o
Lead Soldering Temperature (within 5 sec, minimum 1.6mm from body) at 260
o
C
Unity Opto Technology Co., Ltd.
12/10/2002
MIR-3305-P
Optical-Electrical Characteristics
@ T
A
=25 C
Parameter
Input
Output
Forward Voltage
Reverse Current
Collector Dark Current
symbol
V
F
I
R
Iceo
B
*1
o
Min.
-
-
-
38
56
80
112
-
-
-
Typ.
-
-
-
-
-
-
-
20
20
-
Max.
1.3
10
0.2
75
108
151
216
100
100
0.1
Unit.
V
µA
µA
Test Conditions
I
F
=20mA
V
R
=5V
Vce =10V
Collector Current
Ic
C
D
E
t
r
t
f
µA
I
F
=4mA,Vce=5V
Transfer
Characteristic
s
Response Time (RISE)
Response Time (FALL)
*2
µS
µS
µA
Ic=100µA, Vce =2V
R
L
=1kΩ
Vce =5V
Leak Current
I
LEAK
*1 THE CONDITION AND ARRANGEMENT OF THE REFLECTIVE OBJECT ARE SHOWN AS FOLLOWING .
*2 WITHOUT REFLECTIVE OBJECT.
TEST CONDITION AND ARRANGEMENT FOR COLLECTOR CURRENT
Al refletive Surface
1 mm-thick glass
Device
Typical Optical-Electrical Characteristic Curves
Forward Current I
F
(mA)
60
50
40
30
20
10
0
-25
0
25
50
75
o
Power Dissipation (mW)
120
100
80
60
40
20
0
-25
P
TOT
P
ad
, P
C
100
0
25
50
75
o
100
Ambient Temperature T
A
( C)
Fig.1 forward Current
VS
.
Ambient Temperature
Forward Current I
F
(mA)
Collector Current Ic (
µ
A)
50
40
30
20
10
0
0
0.5
1
1.5
600
500
400
300
200
100
0
0
Ambient Temperature T
A
( C )
Fig.2 Power Dissipation vs.
Ambient Temperature
Vce=5V
Ta=25
o
C
5
10
15
20
Forward Voltage V
F
(V)
Fig.3 Forward Current
VS
Forward Voltage
Forward Current I
F
(mA)
Fig.4 Collector Current vs.
Forward Current
Unity Opto Technology Co., Ltd.
12/10/2002
MIR-3305-P
Typical Optical-Electrical Characteristic Curves
Collector Current Ic (
µ
A)
350
300
250
200
150
100
50
0
0
2
4
6
8
10
12
1mA
Relative Collector Current (%)
Ta=25 C
I
F
=10mA
4mA
o
120
100
80
60
40
20
0
-25
0
25
50
75
o
100
Collector-Emitter Voltage Vce (V)
Fig.5 Collector Current vs. Vce
Collector Dark Current I
CEO
10
-6
10
-7
10
-8
10
-9
Ambient Temperature T
A
( C)
Fig.6 Relative Collector Current
VS
.
100
Response Time (
µ
s)
V
CE
=10V
t
r
t
r
t
d
10
1
0.1
0.01
t
s
V
CE
=2V
I
C
=100µA
T
a
=25
o
C
10
-10
0
25
50
75
o
100
0.1
1
10
Ambient Temperature T
A
( C)
Fig.7 Collector Dark Current vs.
Ambient Temperature
Relative Collector Current (%)
Relative Sensitivity (%)
100
80
60
40
20
0
700
800
900
1000
1100
1200
Ta=25
o
C
120
100
80
60
40
20
0
0
1
Load Resistance R
t
(KΩ)
Fig.8 Response Time vs.
Load Resistance
I
F
=4mA
V
CE
=5V
T
A
=25
o
C
2
3
4
5
6
7
8
9 10
Wavelength (nm)
Fig.9 Spectral Sensitivity (Detecting side)
Distance (mm)
Fig.10 Relative Collector Current vs. Distance
between MIR-3301 and Card
Test Circuit for Response Time
Vcc
Input R
D
R
L
Input
Output Output
10%
t
d
t
r
90%
t
f
t
s
Unity Opto Technology Co., Ltd.
12/10/2002
单片机
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