RO-P-DS-3064 -B -
2.0W X/Ku-Band Power Amplifier
11.5-15.0 GHz
Preliminary Information
MAAPGM0045-DIE
Features
♦
♦
♦
♦
11.5-15.0 GHz GaAs MMIC Amplifier
2.0 Watt Saturated Output Power Level
11.5-15.0 GHz Operation
Variable Drain Voltage (4-10V) Operation
Self-Aligned MSAG
®
MESFET Process
Primary Applications
♦
Point-to-Point Radio
♦
SatCom
Description
The
MAAPGM0045-Die
is a 3-stage 2.0 W power amplifier with on-
chip bias networks. This product is fully matched to 50 ohms on both
the input and output. It can be used as a power amplifier stage or as
a driver stage in high power applications.
Each device is 100% RF tested on wafer to ensure performance
compliance. The part is fabricated using M/A-COM’s repeatable,
high performance and highly reliable GaAs Multifunction Self-Aligned
Gate (MSAG
®
) MESFET Process. This process provides polyimide
scratch protection.
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50Ω, V
DD
= 8V, V
GG
= -1.8V, P
in
= 20 dBm
Parameter
Bandwidth
Output Power
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
Input VSWR
Output VSWR
Gate Current
Drain Current
Output Third Order Intercept
Noise Figure
3
rd
Order Intermodulation Distortion,
Single Carrier Level = 24 dBm
5
th
Order Intermodulation Distortion,
Single Carrier Level = 24 dBm
Symbol
f
P
OUT
PAE
P1dB
G
VSWR
VSWR
I
GG
I
DD
TOI
NF
IM3
IM5
Typical
11.5-15.0
33
22
31
19
2:1
3:1
< 10
< 1.3
37.5
10
-6
-18
mA
A
dBm
dB
dBm
dBm
Units
GHz
dBm
%
dBm
dB
1. T
B
= MMIC Base Temperature
RO-P-DS-3064 - B-
2/6
2.0W X/Ku-Band Power Amplifier
Maximum Operating Conditions
Parameter
Input Power
Drain Voltage
Gate Voltage
Quiescent Drain Current (No RF)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
Storage Temperature
1
MAAPGM0045-DIE
Symbol
P
IN
Absolute Maximum
25.0
+12.0
-3.0
1.3
8.8
180
-55 to +150
Units
dBm
V
V
A
W
°C
°C
V
DD
V
GG
I
DQ
P
DISS
T
J
T
STG
1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Input Power
Drain Voltage
Gate Voltage
Thermal Resistance
Junction Temperature
MMIC Base Temperature
Symbol
P
IN
V
DD
V
GG
T
jc
T
J
T
B
Min
Typ
20.0
Max
23.0
10.0
-1.5
Unit
dBm
V
V
1°C/W
4.0
-2.3
8.0
-1.8
9.1
150
Note 2
°C
°C
2. Maximum MMIC Base Temperature = 150°C - T
jc
* VDD * IDQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply V
GG
= -1.8 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 8.0 V.
3. Adjust V
GG
to set I
DQ
, (approximately @ –1.8 V).
4. Set RF input.
5.
Power down sequence in reverse. Turn gate
voltage off last.
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1908) 574 200, Fax +44 +44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3064 - B-
3/6
2.0W X/Ku-Band Power Amplifier
40
MAAPGM0045-DIE
35
35
30
30
25
25
20
20
POUT
PAE
15
15
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
10
15.0
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency at V
DD
= 8V
and P
in
= 20 dBm.
40
POUT
35
PAE
30
35
30
25
25
20
20
15
15
4
5
6
7
8
9
10
10
Drain Voltage (V)
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage
at f
o
= 13 GHz.
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1908) 574 200, Fax +44 +44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3064 - B-
4/6
2.0W X/Ku-Band Power Amplifier
40
38
36
34
MAAPGM0045-DIE
P1dB (dBm)
32
30
28
26
24
22
20
11.0
VDD = 4
VDD = 8
11.5
12.0
VDD = 6
VDD = 10
12.5
13.0
13.5
14.0
14.5
15.0
Frequency (GHz)
Figure 3. 1dB Compression Point vs. Drain Voltage
30
GAIN
INPUT VSWR
6
25
OUTPUT VSWR
5
Gain (dB)
20
4
15
3
10
2
5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
1
15.0
Frequency (GHz)
Figure 4. Small Signal Gain and VSWR vs. Frequency at VDD = 8V.
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1908) 574 200, Fax +44 +44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
VSWR
RO-P-DS-3064 - B-
5/6
2.0W X/Ku-Band Power Amplifier
MAAPGM0045-DIE
Mechanical Information
Chip Size: 3.0 x 3.0 x 0.075 mm
0.13mm.
GND:G
V
GG
G
:
N
GD
(
118
x 118 x 3 mils)
2.33mm.
2.93mm.
1.04mm.
GND:G
2.93mm.
V
DD3
D :G
G N
D :G
G N
2.81mm.
V
DD1/2
:G
G
N D
: G
G
D
N
D
N :
G
N
G
:
D G
G
N D
G
:
GN:
DG
GN:
DG
G
GNDG
:
GND
G
:
GND
G
:
GNDG
:
N G
GD:
N G
GD:
GN:
DG
GNDG
:
GN:
DG
GNDG
:
GN:
DG
GNDG
:
N G
GD:
GND
G
:
N G
GD:
N G
GD:
N G
GD:
GND
G
:
GND
G
:
GN:
DG
GNDG
:
N G
GD:
GN:
DG
GND
G
:
GNDG
:
GNDG
:
N G
GD:
N G
GD:
GND
G
:
N G
GD:
GN:
DG
GNDG
:
GN:
DG
GNDG
:
GN:
DG
GND
G
:
GN
:
DG
1.47mm.
G
:
NDG
:
N
GD
G
GN:
DG
N G
GD:
GN:
DG
N G
GD:
GNDG
:
N G
GD:
GN:
DG
G N
D :G
N
G
:
D G
GN:
DG
GNDG
:
GN:
DG
N G
GD:
GN:
DG
GNDG
:
GN:
DG
GN:
DG
N G
GD:
GNDG
:
GN:
DG
N G
GD:
GN:
DG
0.13mm.
0
V
GG
0
Figure 5. Die Layout
Bond Pad Dimensions
Pad
RF: IN, OUT
DC: V
DD1/2
DC: V
DD3
DC: V
GG
Size (µm)
100 x 200
200 x 150
200 x 150
150 x 150
Size (mils)
4x8
8x6
8x6
6x6
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1908) 574 200, Fax +44 +44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
G DG
N:
G DG
N:
GND:G
:
D G
G N
N
G
:G
D
GN:
DG
GN:
DG
GNDG
:
GNDG
:
N G
GD:
OUT
1.47mm.
GND:G
IN
GN:
DG
GN:
DG
GNDG
:
GNDG
:
GNDG
:
GN:
DG
GNDG
:
GN:
DG
N G
GD:
N G
GD:
GN:
DG
N G
GD:
GN:
DG
GN:
DG
GN:
DG
GNDG
:
N G
GD:
GN:
DG
GNDG
:
GNDG
:
N G
GD:
GN:
DG
: G
N
GD
GN
D
G
G
D
N :
G
:
G
N D
G
:
GND:G
G
D
N
:G
:G
N D
G
GND:G
G N
:
D G
G N
D :G
V
DD1/2
V
DD3
0.13mm.
2.33mm.
1.04mm.
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
