MRF10350
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI MRF10350
is Designed for
TCAS/TACAN Applications
up to 1090 MHz.
PACKAGE STYLE .400 2NL FLG
A
.0 2 5 x 4 5 °
2X B
C
F
ØD
E
4 x .0 6 2 x 4 5 °
C
FEATURES:
•
Internal Input Matching Network
•
P
G
= 8.5 dB at 350 W/1090 MHz
•
Omnigold™
Metalization System
H
B
L
G
I
J
K
B
P
E
M
N
MAXIMUM RATINGS
I
C
V
CBO
V
CES
P
DISS
T
J
T
STG
θ
JC
31 A
65 V
65 V
1590 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
0.11 °C/W
D IM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
M IN IM U M
inches / m m
M A X IM U M
inches / m m
.0 2 0 / 0 .5 1
.1 0 0 / 2 .5 4
.3 7 6 / 9 .5 5
.1 1 0 / 2 .7 9
.3 9 5 / 1 0 .0 3
.1 9 3 / 4 .9 0
.4 5 0 / 1 1 .4 3
.1 2 5 / 3 .1 8
.6 4 0 / 1 6 .2 6
.8 9 0 / 2 2 .6 1
.3 9 5 / 1 0 .0 3
.0 0 4 / 0 .1 0
.0 5 2 / 1 .3 2
.1 1 8 / 3 .0 0
.0 3 0 / 0 .7 6
.3 9 6 / 1 0 .0 6
.1 3 0 / 3 .3 0
.4 0 7 / 1 0 .3 4
.6 6 0 / 1 6 .7 6
.9 1 0 / 2 3 .1 1
.4 1 5 / 1 0 .5 4
.0 0 7 / 0 .1 8
.0 7 2 / 1 .8 3
.1 3 1 / 3 .3 3
.2 3 0 / 5 .8 4
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
EBO
I
CBO
h
FE
P
G
η
C
I
C
= 60 mA
I
C
= 60 mA
I
E
= 10 mA
V
CE
= 36 V
T
C
= 25 °C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
65
3.5
25
UNITS
V
V
V
mA
---
V
CE
= 5.0 V
V
CC
= 50 V
I
C
= 5.0 A
P
OUT
= 350 W
f = 1090 MHz
20
8.5
40
9.0
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
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