DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BCV28; BCV48
PNP Darlington transistors
Product specification
Supersedes data of 1997 Apr 21
1999 Apr 08
Philips Semiconductors
Product specification
PNP Darlington transistors
FEATURES
•
Very high DC current gain (min. 10000)
•
High current (max. 500 mA)
•
Low voltage (max. 60 V).
APPLICATIONS
•
Where very high amplification is required.
handbook, halfpage
BCV28; BCV48
PINNING
PIN
1
2
3
emitter
collector
base
DESCRIPTION
DESCRIPTION
PNP Darlington transistor in a SOT89 plastic package.
NPN complements: BCV29 and BCV49.
MARKING
TYPE NUMBER
BCV28
BCV48
MARKING CODE
ED
EE
1
Bottom view
2
3
3
2
TR1
TR2
1
MAM301
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BCV28
BCV48
V
CES
collector-emitter voltage
BCV28
BCV48
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open collector
V
BE
= 0
−
−
−
−
−
−
T
amb
≤
25
°C;
note 1
−
−65
−
−65
−30
−60
−10
−500
−800
−100
1.3
+150
150
+150
V
V
V
mA
mA
mA
W
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
−40
−80
V
V
MIN.
MAX.
UNIT
1999 Apr 08
2
Philips Semiconductors
Product specification
PNP Darlington transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
BCV28; BCV48
VALUE
96
16
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
BCV28
BCV48
I
EBO
h
FE
emitter cut-off current
DC current gain
BCV28
BCV48
DC current gain
BCV28
BCV48
DC current gain
BCV28
BCV48
DC current gain
BCV28
BCV48
V
CEsat
V
BEsat
V
BEon
f
T
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
I
C
=
−100
mA; I
B
=
−0.1
mA
I
C
=
−100
mA; I
B
=
−0.1
mA
I
C
=
−10
mA; I
B
=
−5
mA
I
C
=
−30
mA; V
CE
=
−5
V;
f = 100 MHz
I
C
=
−500
mA; V
CE
=
−5
V; see Fig.2
4000
2000
−
−
−
−
−
−
−
−
−
220
−
−
−1
−1.5
−1.4
−
V
V
V
MHz
I
C
=
−100
mA; V
CE
=
−5
V; see Fig.2
20000
−
10000
−
−
−
I
C
=
−10
mA; V
CE
=
−5
V; see Fig.2
10000
−
4000
−
−
−
PARAMETER
collector cut-off current
I
E
= 0; V
CB
=
−30
V
I
E
= 0; V
CB
=
−60
V
I
C
= 0; V
BE
=
−10
V
I
C
=
−1
mA; V
CE
=
−5
V; see Fig.2
4000
2000
−
−
−
−
−
−
−
−
−
−
−100
−100
−100
nA
nA
nA
CONDITIONS
MIN.
TYP.
MAX. UNIT
1999 Apr 08
3
Philips Semiconductors
Product specification
PNP Darlington transistors
BCV28; BCV48
handbook, full pagewidth
100000
hFE
MGD836
80000
60000
40000
20000
0
−1
−10
−10
2
IC (mA)
−10
3
V
CE
=
−5
V.
Fig.2 DC current gain; typical values.
1999 Apr 08
4
Philips Semiconductors
Product specification
PNP Darlington transistors
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
BCV28; BCV48
SOT89
D
B
A
b3
E
HE
L
1
2
b2
3
c
w
M
b1
e
1
e
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.6
1.4
b1
0.48
0.35
b2
0.53
0.40
b3
1.8
1.4
c
0.44
0.37
D
4.6
4.4
E
2.6
2.4
e
3.0
e1
1.5
HE
4.25
3.75
L
min.
0.8
w
0.13
OUTLINE
VERSION
SOT89
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 08
5
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