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RN1705JE(TPL3): 产品描述PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR; 产品类别分立半导体晶体管; 文件大小544KB，共8页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN1705JE(TPL3)概述

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR

RN1705JE(TPL3)规格参数

参数名称	属性值
是否Rohs认证	不符合
包装说明	,
Reach Compliance Code	unknown
最大集电极电流 (IC)	0.1 A
最小直流电流增益 (hFE)	80
元件数量	2
极性/信道类型	NPN
最大功率耗散 (Abs)	0.1 W
表面贴装	YES
晶体管元件材料	SILICON
Base Number Matches	1

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RN1701JE~RN1706JE

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN1701JE,RN1702JE,RN1703JE

RN1704JE,RN1705JE,RN1706JE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (5 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more compact

equipment and lowers assembly cost.

•

A wide range of resistor values is available for use in various circuit

designs.

Complementary to RN2701JE~RN2706JE

1.BASE1

(B1)

2.EMITTER

(E)

3.BASE2

(B2)

4.COLLECTOR2 (C2)

5.COLLECTOR1 (C1)

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN1701JE

RN1702JE

RN1703JE

RN1704JE

RN1705JE

RN1706JE

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

JEDEC

JEITA

TOSHIBA

―

2-2P1D

Weight: 0.003 g (typ.)

Absolute Maximum Ratings

(Ta = 25°C) (Q1, Q2 common)

Characteristics

Collector-base voltage

Collector-emitter voltage

RN1701JE~

1706JE

RN1701JE~

1704JE

RN1705JE,

RN1706JE

Symbol

CBO

CEO

Rating

EBO

(Note 1)

stg

100

150

−55~150

°C

Unit

Equivalent Circuit

(top view)

Emitter-base voltage

Collector current

Collector power dissipation RN1701JE~

1706JE

Junction temperature

Storage temperature range

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

2007-11-01

RN1705JE(TPL3)相似产品对比

	RN1705JE(TPL3)	RN1705JE(TE85L)	RN1704JE(TPL3)	RN1702JE(TE85L)	RN1706JE(TPL3,F)	RN1706JE(TPL3)	RN1703JE(TE85L)	RN1703JE(TPL3,F)	RN1703JE(TPL3)	RN1701JE(TE85L)
描述	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR	RN1705JE(TE85L)	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR	RN1702JE(TE85L)	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR	RN1703JE(TE85L)	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR	RN1701JE(TE85L)
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
是否Rohs认证	不符合	-	不符合	-	符合	不符合	-	符合	不符合	-
最大集电极电流 (IC)	0.1 A	-	0.1 A	-	0.1 A	0.1 A	-	0.1 A	0.1 A	-
最小直流电流增益 (hFE)	80	-	80	-	80	80	-	70	70	-
元件数量	2	-	2	-	2	2	-	2	2	-
极性/信道类型	NPN	-	NPN	-	NPN	NPN	-	NPN	NPN	-
最大功率耗散 (Abs)	0.1 W	-	0.1 W	-	0.1 W	0.1 W	-	0.1 W	0.1 W	-
表面贴装	YES	-	YES	-	YES	YES	-	YES	YES	-
晶体管元件材料	SILICON	-	SILICON	-	SILICON	SILICON	-	SILICON	SILICON	-
Base Number Matches	1	1	1	1	1	1	-	-	-	-

RN1705JE(TPL3)

RN1705JE(TPL3)概述

RN1705JE(TPL3)规格参数

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RN1705JE(TPL3)相似产品对比

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