RN4911FE
TOSHIBA Transistor Silicon PNP·NPN Epitaxial Type
(PCT Process) (Bias Resistor Built-in Transistor)
RN4911FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
•
•
Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Unit: mm
Equivalent Circuit and Bias Resistor Values
Q1
C
Q2
C
B
R1
B
R1
JEDEC
E
E
―
―
2-2N1G
JEITA
TOSHIBA
R1: 10 kΩ
(Q1, Q2 common)
Weight: 0003 g (typ.)
Marking
Equivalent Circuit
(top view)
6
5
4
VM
Q1
Q2
1
2
3
1
2007-11-01
RN4911FE
Absolute Maximum Ratings
(Ta = 25°C) (Q1)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
−50
−50
−5
−100
Unit
V
V
V
mA
Absolute Maximum Ratings
(Ta = 25°C) (Q2)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
50
50
5
100
Unit
V
V
V
mA
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
(Note 1)
T
j
T
stg
Rating
100
150
−55~150
Unit
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
2
2007-11-01
RN4911FE
Electrical Characteristics
(Ta = 25°C) (Q1)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
Test Condition
V
CB
= −50
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −5
V, I
C
= −1
mA
I
C
= −5
mA, I
B
= −0.25
mA
V
CE
= −10
V, I
C
= −5
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Min
⎯
⎯
120
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
−0.1
200
3
Max
−100
−100
400
−0.3
⎯
6
V
MHz
pF
Unit
nA
nA
Electrical Characteristics
(Ta = 25°C) (Q2)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
Test Condition
V
CB
=
50 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 mA
I
C
=
5 mA, I
B
=
0.25 mA
V
CE
=
10 V, I
C
=
5 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
⎯
⎯
120
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
0.1
250
3
Max
100
100
700
0.3
⎯
6
V
MHz
pF
Unit
nA
nA
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Input resistor
Symbol
R1
Test Condition
⎯
Min
7
Typ.
10
Max
13
Unit
kΩ
3
2007-11-01
RN4911FE
Q1
(mA)
(μA)
4
2007-11-01
RN4911FE
Q2
(mA)
5
2007-11-01
stm32/stm8
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