RN1112MFV, RN1113MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor)
RN1112MFV, RN1113MFV
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Ultra-small package, suited to very high density mounting
Incorporating a bias resistor into the transistor reduces the number of parts, so
enabling the manufacture of ever more compact equipment and lowering assembly
cost.
A wide range of resistor values is available for use in various circuits.
Complementary to the RN2112MFV, RN2113MFV
Unit: mm
Equivalent Circuit
VESM
1.BASE
2.EMITTER
3.COLLECTOR
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
50
50
5
100
150
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
1-1Q1S
Weight: 1.5 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm
×
25.4 mm
×
1.6 mm)
Land Pattern Dimensions (for reference only)
0.5
0.45
Unit：mm
1.15
0.4
0.45
Start of commercial production
0.4
0.4
2005-02
1
2019-01-07
© 2016-2019
Toshiba Electronic Devices & Storage Corporation
RN1112MFV, RN1113MFV
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
RN1112MFV
Input resistor
RN1113MFV
R1
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
C
ob
Test Condition
V
CB
= 50 V, I
E
= 0 A
V
EB
= 5 V, I
C
= 0 A
V
CE
= 5 V, I
C
= 1 mA
I
C
= 5 mA, I
B
= 0.5 mA
V
CB
= 10 V, I
E
= 0 A, f = 1 MHz
―
Min
―
―
120
―
―
15.4
32.9
Typ.
―
―
―
0.1
0.7
22
47
Max
100
100
700
0.3
―
28.6
kΩ
61.1
Unit
nA
nA
―
V
pF
© 2016-2019
Toshiba Electronic Devices & Storage Corporation
2
2019-01-07
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