This circuit uses a darlington pair topology with resistive
feedback for broadband performance as well as stability
over its entire temperature range. Internally matched to
50 ohm impedance, the SGA-6389 requires only DC
blocking and bypass capacitors for external components.
Small Signal Gain vs. Frequency
SGA-6389
DC-3000 MHz Silicon Germanium
HBT Cascadeable Gain Block
20
15
dB
10
Product Features
•
DC-3000 MHz Operation
•
Single Voltage Supply
•
High Output Intercept: +36 dBm at 850 MHz
•
Internally Matched to 50 Ohms Input & Output
Applications
•
Oscillator Amplifiers
•
Final PA for Low Power Applications
•
IF/ RF Buffer Amplifier
•
Drivers for CATV Amplifiers
U n its
f = 850 MHz
f = 1950 MHz
f = D C -1000 MHz
f = 1000-2000 MHz
f = 2000-5000 MHz
f = D C -1000 MHz
f = 1000-2000 MHz
f = 2000-5000 MHz
f = D C -5000 MHz
f = D C -5000 MHz
f = 850 MHz
f = 1950 MHz
f = D C -1000 MHz
f = 1000-2400 MHz
f = 1000 MHz
dBm
dBm
dB
dB
dB
dB
dB
dB
-
-
dBm
dBm
dB
dB
pS
V
mA
4.4
14.0
Min.
Typ.
21.0
19.0
15.4
14.0
10.7
20.2
20.2
16.7
1.40:1
1.60:1
36.0
34.0
3.8
4.4
112.0
5.0
80
5.5
Max.
5
0
100
500
900
1900
2400
3500
5000
Frequency MHz
Electrical Specifications at Ta = 25C
Symbol
P
1dB
Parameters: Test Conditions:
Z
0
= 50 Ohms, f = D C -3000 MHz
Output Power at 1dB Compression
S
21
Small Signal Gain
S
12
S
11
S
22
IP
3
NF
T
D
V
D
I
D
Reverse Isolation
Input VSWR
Output V S W R
Third Order Intercept Point
Noise Figure
Group Delay
Device Voltage
Device C urrent
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-100620 Rev A
Preliminary
Preliminary
SGA-6389 DC-3000 MHz 5.0V SiGe Amplifier
Specification
Parameter
Bandwidth
Frequency Range
Device Bias
Operating Voltage
Operating Current
500 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
850 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
1950 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
2400 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
Min
DC
5.0
80.0
15.5
3.7
37.1
20.5
24.0
20.2
15.4
3.8
36.0
21.0
25.6
20.4
13.3
4.4
34.0
19.0
26.7
19.9
12.5
4.5
32.2
17.7
20.4
19.2
Typ.
Max.
3000
Unit
T= 25C
MHz
T= 25C
V
mA
T= 25C
dB
dB
dBm
dBm
dB
dB
T= 25C
dB
dB
dBm
dBm
dB
dB
T= 25C
dB
dB
dBm
dBm
dB
dB
T= 25C
dB
dB
dBm
dBm
dB
dB
Test
Condition
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-100620 Rev A
Preliminary
Preliminary
SGA-6389 DC-3000 MHz 5.0V SiGe Amplifier
Pin #
1
Function
Description
RF IN
RF input pin. This pin requires the use of
an external DC blocking capacitor
chosen for the frequency of operation.
GND
Connection to ground. Use via holes for
best performance to reduce lead
inductance as close to ground leads as
possible.
RF OUT/ RF output and bias pin. DC voltage is
BIAS
present on this pin, therefore a DC
blocking capacitor is necessary for
proper operation.
GND
Sames as Pin 2
Device Schematic
2
3
4
Application Schematic for +6V Operation at 900 MHz
1uF
68pF
12.5 ohms
V
CC
=+6V
33nH
50 ohm
microstrip
2
1
3
100pF
4
100pF
50 ohm
microstrip
Application Schematic for +6V Operation at 1900 MHz
1uF
22pF
12.5 ohms
V
CC
=+6V
22nH
50 ohm
microstrip
2
1
3
68pF
4
68pF
50 ohm
microstrip
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-100620 Rev A
Preliminary
Preliminary
SGA-6389 DC-3000 MHz 5.0V SiGe Amplifier
S12, Id =80mA, T=25C
S21, Id =80mA, T=25C
20
15
dB
0
-10
dB
-20
10
5
0
100
500
900
1900
2400
3500
5000
-30
-40
100
500
900
1900
2400
3500
3500
5000
5000
Frequency MHz
Frequency MHz
S11, Id =80mA, T=25C
S22, Id =80mA, T=25C
0
-10
dB
0
-10
dB
-20
-30
-40
100
500
900
1900
2400
3500
5000
-20
-30
-40
100
500
900
1900
2400
Frequency MHz
Frequency MHz
S11, Id=80mA, Ta=25C
Freq. Min = 0.1 GHz
Freq. Max = 3.0 GHz
S22, Id=80mA, Ta=25C
Freq. Min = 0.1 GHz
Freq. Max = 3.0 GHz
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-100620 Rev A
Preliminary
Preliminary
SGA-6389 DC-3000 MHz 5.0V SiGe Amplifier
S21, Id =80mA, T=-40C
S12, Id =80mA, T=-40C
20
15
dB
0
-10
dB
10
5
0
100
500
900
1900
2400
3500
5000
-20
-30
-40
100
500
900
1900
2400
3500
5000
Frequency MHz
Frequency MHz
S11, Id =80mA, T=-40C
S22, Id =80mA, T=-40C
0
-10
dB
0
-10
dB
-20
-30
-40
100
500
900
1900
2400
3500
5000
-20
-30
-40
100
500
900
1900
2400
3500
5000
Frequency MHz
Frequency MHz
S11, Id=80mA, Ta=-40C
Freq. Min = 0.1 GHz
Freq. Max = 3.0 GHz
S22, Id=80mA, Ta=-40C
Freq. Min = 0.1 GHz
Freq. Max = 3.0 GHz
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
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