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SGA-4463-TR1

产品描述Wide Band Low Power Amplifier, 0MHz Min, 2000MHz Max,
产品类别无线/射频/通信    射频和微波   
文件大小254KB,共7页
制造商Qorvo
官网地址https://www.qorvo.com
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SGA-4463-TR1概述

Wide Band Low Power Amplifier, 0MHz Min, 2000MHz Max,

SGA-4463-TR1规格参数

参数名称属性值
是否Rohs认证不符合
Reach Compliance Codeunknown
特性阻抗50 Ω
构造COMPONENT
增益17.7 dB
最大输入功率 (CW)5 dBm
JESD-609代码e0
最大工作频率2000 MHz
最小工作频率
最高工作温度85 °C
最低工作温度-40 °C
射频/微波设备类型WIDE BAND LOW POWER
端子面层Tin/Lead (Sn/Pb)
最大电压驻波比1.4
Base Number Matches1

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Preliminary
Product Description
Stanford Microdevices’ SGA-4463 is a high performance
cascadeable 50-ohm amplifier designed for operation at
voltages as low as 3.2V. This RFIC uses the latest Silicon
Germanium Heterostructure Bipolar Transistor (SiGe HBT)
process featuring 1 micron emitters with F
T
up to 50 GHz.
This circuit uses a darlington pair topology with resistive
feedback for broadband performance as well as stability
over its entire temperature range. Internally matched to
50 ohm impedance, the SGA-4463 requires only DC
blocking and bypass capacitors for external components.
SGA-4463
DC-2000 MHz Silicon Germanium
HBT Cascadeable Gain Block
Small Signal Gain vs. Frequency
24
18
Product Features
DC-2000 MHz Operation
Single Voltage Supply
High Output Intercept: +27.0dBm typ. at
850 MHz
dB
1 2
6
0
100
500
900
1900
2400
3500
6000
Frequency MHz
Low Current Draw: 45mA at 3.2V typ.
Excellent Noise Figure: 2.6dB typ. at 850 MHz
Applications
Oscillator Amplifiers
PA for Low Power Applications
IF/ RF Buffer Amplifier
Drivers for CATV Amplifiers
Broadband
Units
Min.
Typ.
14.0
12.3
17.7
19.7
17.9
23.0
22.6
1.2:1
1.4:1
27.0
24.8
2.5
2.9
130
2.9
3.2
3.5
Max.
Symbol
P
1dB
Parameters: Test Conditions:
Z
0
= 50 Ohms, Id = 45 mA, T = 25ºC
Output Power at 1dB Compression
f = 850 MHz
f = 1950 MHz
f = DC - 1000 MHz
f = 1000 - 2000 MHz
f = DC - 1000 MHz
f = 1000 - 2000 MHz
f = DC - 2000 MHz
f = DC - 2000 MHz
f = 850 MHz
f = 1950 MHz
f = DC - 1000 MHz
f = 1000 - 2000 MHz
f = 1000 MHz
dB m
dB m
dB
dB
dB
dB
-
-
dB m
dB m
dB
dB
pS
V
S
21
Small Signal Gain
S
12
S
11
S
22
IP
3
NF
T
D
V
D
Reverse Isolation
Input VSWR
Output VSWR
Third Order Intercept Point
Power out per Tone = 0 dBm
Noise Figure
Group Delay
Device Voltage
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-100644 Rev A

 
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