SENSITRON
SEMICONDUCTOR
Data Sheet 2728, Rev. -
MR850-MR858
3.0A FAST RECOVERY RECTIFIER
Features
l
l
l
l
l
l
Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Low Power Loss
Fast Recovery Time
High Surge Current Capability
A
B
A
C
D
Mechanical Data
Case: Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
l
Polarity: Cathode Band or Cathode Notch
l
Marking: Type Number
l
Mounting
Position: Any
l
Weight: 0.21 grams (approx.)
l
l
Dim
A
B
C
D
All
DO-201AD
Min Max
Min
25.4
—
8.50 9.50
1.20 1.30
5.0 5.60
In mm
Max
1.000
—
0.335 0.374
0.047 0.051
0.197 0.220
In inch
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
L
= 75°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
j
T
j,
T
STG
MR850
@T
A
=25°C unless otherwise specified
MR851 MR852
MR854
MR856 MR858
Unit
50
35
100
70
200
140
3.0
150
1.25
10
200
100
80
400
280
600
420
800
560
V
V
A
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
@I
F
= 3.0A
@T
A
= 25°C
@T
A
= 100°C
1.30
V
µA
150
nS
pF
°C
-65 to +150
Note: 1. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
•
221 West Industry Court
!
Deer Park, NY 11729-4681
!
(631) 586-7600 FAX (631) 242-9798
•
•
World Wide Web Site - http://www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
SENSITRON
SEMICONDUCTOR
Data Sheet 2728, Rev. -
MR850-MR858
3.0A FAST RECOVERY RECTIFIER
RATINGS
AND
CHARACTERISTIC
(MR850-MR858)
CURVES
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
AVERAGE FORWARD CURRENT AMPERES
4
150
FIG.2- MAXIMUM NON-REPETITIVE PEAK SURGE
CURRENT
PEAK FORWARD SURGE CURRENT. (A)
3
100
2
50
1
0
10
1
5
10
50
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE. ( C)
NUMBER OF CYCLES AT 60Hz
FIG.3- TYPICAL FORWARD CHARACTERISTICS
FIG.4- TYPICAL JUNCTION CAPACITANCE
20
o
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375"(9.5mm)
Lead Length
Tj=25
0
C
8.3ms Single Half Sine Wave
JEDEC Method
100
90
80
10
INSTANTANEOUS FORWARD CURRENT. (A)
JUNCTION CAPACITANCE.(pF)
3.0
60
1.0
40
20
Tj=25
0
C
0.3
0.1
Tj=25
o
C
Pulse Width=300 s
1% Duty Cycle
0
1
2
4
6
10
20
REVERSE VOLTAGE. (V)
40
60
100
.03
.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE. (V)
FIG.5- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
+0.5A
(-)
DUT
(+)
50Vdc
(approx)
(-)
PULSE
GENERATOR
(NOTE 2)
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
•
221 West Industry Court
!
Deer Park, NY 11729-4681
!
(631) 586-7600 FAX (631) 242-9798
•
•
World Wide Web Site - http://www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
•
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
•
•
World Wide Web - http://www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
