FMM5703X
24-32GHz LNA MMIC
FEATURES
• Low Noise Figure: NF = 2dB (Typ.) @ f=32 GHz
• High Associated Gain: Gas = 18dB (Typ.) @ f=32 GHz
• Wide Frequency Band: 24-32 GHz
• High Output Power: 9dBm (Typ.) @ f=32 GHz
• Impedance Matched Zin/Zout = 50Ω
DESCRIPTION
The FMM5703X is a LNA MMIC designed for
applications in the 24-32 GHz frequency range.
This product is well suited for satellite communications,
radio link, and applications where low noise and high
dynamic range are required.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Input Power
Storage Temperature
Operating Backside Temperature
Symbol
VDD
Pin
Tstg
Top
Condition
Rating
4
-3
-65 to +175
-45 to +125
Unit
V
dBm
°C
°C
Eudyna recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 3 volts.
2. This product should be hermetically packaged.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Noise Figure
Associated Gain
Output Power at 1dB G.C.P.
Input Return Loss
Output Return Loss
Symbol
NF
G
as
P1dB
RLin
RLout
VDD = 3V
f = 32 GHz
IDD
=
20mA (Typ.)
ZS = ZL = 50Ω
Conditions (2)
Limits
Min. Typ. Max.
-
15
-
-
-
2.0
18
9
-10
-10
2.5
20
-
-
-
Unit
dB
dB
dBm
dB
dB
Note 1:
RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1)
Note 2:
Electrical Characteristics specified with RF-probe measurement.
Edition 1.0
December 2000
1
FMM5703X
24-32GHz LNA MMIC
NOISE FIGURE & Gas vs. FREQUENCY
P1dB & G1dB vs. FREQUENCY
VDD = 3V
IDD = 20mA
5
25
12
VDD = 3V
IDD = 23mA
P1dB
G1dB
30
Gas
P1dB (dBm)
4
Noise Figure (dB)
20
Gas (dB)
10
25
G1dB (dB)
8
20
3
15
6
15
2
10
4
10
NF
1
5
24
26
28
30
32
36
Frequency (GHz)
20
22
24
26
28
30
32
34
Frequency (GHz)
OUTPUT POWER vs. INPUT POWER
VDD = 3V
IDD = 23mA
12
10
8
Output Power (dBm)
6
4
2
0
-2
-4
26 GHz
28 GHz
30 GHz
32 GHz
34 GHz
-20
-15
-10
-5
0
5
Input Power (dBm)
ASSEMBLY DRAWING
0.15µF
100pF
RFin
RFout
*1
*2
*1: Bonding Wire Length: 250µm
*2: Bonding Wires: 2
*1
*2
2
FMM5703X
24-32GHz LNA MMIC
CHIP OUTLINE
380
1030
1180
Unit:
µm
VDD1
1020
VDD2
VDD3
600
RF IN
RF OUT
0
0
140
1420
Chip Size: 1.56mm x 1.16mm
Chip Thickness: 110µm(Typ.)
Pad Dimensions: 1. DC 80 x 80µm
2. RF 80 x 160µm
All Vdd pads are connected together
4
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