DATA SHEET
BZT52-B2V4SG~BZT52-B75SG
200mW SURFACE MOUNT ZENER DIODES
FEATURES
.106(2.70)
.098(2.50)
.070(1.80)
PLANAR DIE CONSTRUCTION
200mW POWER DISSIPATION
ZENER VOLTAGES FROM 2.0~36V
IDEALLY SUITED FOR AUTOMATED ASSEMBLY PROCESSES
TEST METHOD: IEC61000-4-2 (C=150pF, R-330Ω, CONTACT
. 0 5 5 (1. 4 0 )
. 0 1 4 (0. 3 5 )
. 0 0 9 (0. 2 5 )
.062(1.60)
DISCHARGE:10 TIMES)
. 0 4 6 (1. 2 0 )
BOTH PB FREE AND HALOGEN FREE ARE AVAILABLE
. 0 4 3 (1. 1 0 )
. 0 3 1 (0. 8 0 )
CATHODE
MECHANICAL DATA
CASE:SOD-323 , MOLDED PLASTIC
TERMINALS:SOLDERABLE PER MIL-STD-202, METHOD 208
POLARITY:SEE DIAGRAM BELOW
CASE：SOD-323
DIMENSIONS IN INCHES AND (MILLIMETERS)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS AT 25-C AMBIENT TEMPERATURE UNLESS OTHERWISE SPE-CIFIED
PARAMETER
MAXIMUM FORWARD VOLTAGE DROP AT I
F
=10mA
THERMAL RESISTANCE
MAXIMUM POWER DISSIPATION AT 25℃
CASE TEMPERATURE
STORAGE TEMPERATURE RANGE
OPERATING JUNCTION TEMPERATURE RANGE
SYMBOL
V
F
R
θ
JA
R
θ
JC
P
D
T
C
T
STG
T
J
VALUE
1.0
625
200
200
80
-65 TO +150
-65 TO +150
UNITS
V
C/W
mW
C
C
C
STD_V1.1
PAGE.1
DATA SHEET
BZT52-B2V4SG~BZT52-B75SG
POWER DISSIPATION,WATTS
0.5
T
A
=25°C
1000
0V BIAS
CAPACITANCE,PF
0.4
0.3
0.2
0.1
0
0
T
A
=25℃
100
10
1
1V BIAS
BIASAT
50% OF V
Z
NOM
25
50
75
100
125
150
1
10
100
TEMPERATURE(°C)
NORMAL ZENER VOLTAGE,VOLTS
Fig.1-STEADY STATE POWER DERATING
Fig.2-TYPICAL CAPACITANCE
1000
LEAKAGE CURRENT,uA
100
10
1
0.1
0.01
0.001
0.0001
0.00001
-55°C
+25°C
+150°C
0
10 20 30 40 50 60 70 80 90
NORMAL ZENER VOLTAGE,VOLTS
Fig.3-TYPICAL LEAKAGE CURRENT
STD_V1.1
PAGE.3
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