NTE491T
MOSFET
N - Ch, Enhancement Mode
High Speed Switch
Features:
D
Zener Diode Input Protected
D
Low On - Resistance
D
Ultralow Threshold
D
Low Input Characteristics
D
Low Input and Output Leakage
Applications:
D
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc,
D
Battery Operated Systems
D
Solid - State Relays
D
Inductive Load Drivers
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Drain - Source Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Gate - Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15/ - 0.3V
Drain Current, I
D
Continuous (T
J
= +150°C)
T
A
= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mA
T
A
= +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Power Dissipation, P
D
T
A
= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
T
A
= +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55° to +150°C
Thermal Resistance, Junction - to - Ambient, R
th (JA)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Static Characteristics
Drain- Source Breakdown Voltage
Gate Threshold Voltage
Gate- Body Leakage Current
Zero - Gate- Voltage Drain Current
V
(BR)DSS
V
GS
= 0, I
D
= 100µA
V
GS(Th)
I
GSS
I
DSS
I
d(on)
r
DS(on)
I
D
= 1mA, V
DS
= V
GS
V
GS
= 15V, V
DS
= 0
V
DS
= 48V, V
GS
= 0
V
DS
= 48V, V
GS
= 0, T
J
= +125°C
ON - State Drain Current
Drain-Source ON Resistance
V
GS
= 10V, V
DS
= 10V, Note 1
V
GS
= 10V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA, T
J
= +125°C
V
GS
= 5V, I
D
= 200mA
Forward Transconductance
Dynamic Characteristics
Input Capacitance
C
iss
V
DS
= 25V, V
GS
= 0V, f = 1MH
Z
-
-
60
pF
g
fs
V
DS
= 10V, I
D
= 500mA
100
-
60
0.8
-
-
-
750
-
-
-
-
-
-
-
-
-
-
-
2.5
100
10
500
-
5.0
6.0
V
V
nA
µA
mA
mA
Ω
Ω
Ω
mS
Symbol
Test Conditions
Min
Typ
Max
Unit
7.5
-
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 2)
Turn - On Time
C
oss
C
rss
t
ON
V
DD
= 15V, R
L
= 23Ω, I
D
= 600mA,
V
GEN
= 10V, R
G
= 25Ω
Ω
-
-
-
-
-
-
25
5
10
pF
pF
ns
Turn - Off Time
t
OFF
-
-
10
ns
Note 1. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
Note 2. Switching time is essentially independent of operating temperature.
.200 (5.08)
.180 (4.57)
.100 (2.54)
SGD
.180
(4.57)
.594
(15.09)
.018 (0.46)
.015 (0.38)
.050 (1.27)
.050 (1.27)
.050 (1.27)
.140
(3.55)
.090 (2.28) R
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