电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

RDA2032ZTR13

产品描述RF and Baseband Circuit, 5.20 X 5.20 MM, ROHS COMPLIANT, MCM-32
产品类别无线/射频/通信    电信电路   
文件大小892KB,共11页
制造商Qorvo
官网地址https://www.qorvo.com
标准
下载文档 详细参数 选型对比 全文预览

RDA2032ZTR13概述

RF and Baseband Circuit, 5.20 X 5.20 MM, ROHS COMPLIANT, MCM-32

RDA2032ZTR13规格参数

参数名称属性值
是否Rohs认证符合
包装说明HQCCN,
Reach Compliance Codecompliant
ECCN代码5A991.G
JESD-30 代码S-XQCC-N32
长度5.2 mm
功能数量1
端子数量32
最高工作温度85 °C
最低工作温度-40 °C
封装主体材料UNSPECIFIED
封装代码HQCCN
封装形状SQUARE
封装形式CHIP CARRIER, HEAT SINK/SLUG
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
座面最大高度1.36 mm
标称供电电压5 V
表面贴装YES
电信集成电路类型RF AND BASEBAND CIRCUIT
温度等级INDUSTRIAL
端子形式NO LEAD
端子节距0.5 mm
端子位置QUAD
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度5.2 mm
Base Number Matches1

文档预览

下载PDF文档
RDA2032Z
50 MHz to
1000 MHz Dig-
ital VGa with 6-
Bit 0.5 dB Par-
allel Control
RDA2032Z
50 MHz TO 1000 MHz DIGITAL VGA WITH 6-BIT
0.5 dB PARALLEL CONTROL
Package: MCM 32-Pin, 5.2 mm x 5.2 mm
Features
Broadband 50 MHz to 1000 MHz
Operation
6-Bit Digital Step Attenuator
Parallel Mode Gain Programming
Max Gain = 38.8 dB at 140 MHz
Gain Control Range = 31.5 dB
(0.5 dB Step Size)
High OIP3/P1dB = +42/20 dBm
at 140 MHz
Single +5 V Supply
3 V or 5 V Logic Level Compatible
Small 32-Pin, 5.2 mm x 5.2 mm,
MCM
Footprint Compatible with
5 mm x 5 mm 32-Pin QFN
Functional Block Diagram
Applications
Linear IF Applications
Cellular, 3G Infrastructure
WiBro, WiMAX, LTE
Microwave Radio
High Linearity Power Control
RFMD’s RDA2032Z is a digital controlled variable gain amplifier (DVGA) featuring
high linearity over the entire gain control range. The attenuation of the 6-bit digital
step attenuator is programmed with a parallel mode control interface. The
RDA2032Z has two amplifier stages packaged in a small 5.2 mm x 5.2 mm leadless
laminate MCM containing plated through thermal vias for ultra low thermal resis-
tance. The footprint for this module is directly compatible with a 5 mm x 5 mm 32-pin
QFN. This module is easy to use with no external matching components required.
Optimum Technology Matching® Applied
DS100813
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 11

RDA2032ZTR13相似产品对比

RDA2032ZTR13 RDA2032ZTR7
描述 RF and Baseband Circuit, 5.20 X 5.20 MM, ROHS COMPLIANT, MCM-32 RF and Baseband Circuit, 5.20 X 5.20 MM, ROHS COMPLIANT, MCM-32
是否Rohs认证 符合 符合
包装说明 HQCCN, HQCCN,
Reach Compliance Code compliant compliant
ECCN代码 5A991.G 5A991.G
JESD-30 代码 S-XQCC-N32 S-XQCC-N32
长度 5.2 mm 5.2 mm
功能数量 1 1
端子数量 32 32
最高工作温度 85 °C 85 °C
最低工作温度 -40 °C -40 °C
封装主体材料 UNSPECIFIED UNSPECIFIED
封装代码 HQCCN HQCCN
封装形状 SQUARE SQUARE
封装形式 CHIP CARRIER, HEAT SINK/SLUG CHIP CARRIER, HEAT SINK/SLUG
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified
座面最大高度 1.36 mm 1.36 mm
标称供电电压 5 V 5 V
表面贴装 YES YES
电信集成电路类型 RF AND BASEBAND CIRCUIT RF AND BASEBAND CIRCUIT
温度等级 INDUSTRIAL INDUSTRIAL
端子形式 NO LEAD NO LEAD
端子节距 0.5 mm 0.5 mm
端子位置 QUAD QUAD
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
宽度 5.2 mm 5.2 mm
Base Number Matches 1 1

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2725  1829  1707  517  640  57  16  19  45  26 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved