SFH615AA/AGB/AGR
5.3 kV TRIOS
®
Optocoupler
High Reliability
FEATURES
• High Current Transfer Ratios
– at 5 mA: 50–600%
– at 1 mA: 60% typical (>13)
• Low CTR Degradation
• Good CTR Linearity Depending on Forward
Current
• Isolation Test Voltage, 5300 VACRMS
• High Collector-Emitter Voltage, VCEO=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS (TRansparent
IOn Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100"(2.54 mm) Spacing
• High Common-Mode Interference Immunity
(Unconnected Base)
• Underwriters Lab File #52744
•
VDE 0884 Available with Option 1
• SMD Option – See SFH6106/16/56 Data Sheet
DESCRIPTION
The SFH615AA/AGB/AGR features a high current
transfer ratio, low coupling capacitance and high
isolation voltage. These couplers have a GaAs
infrared emitting diode emitter, which is optically
coupled to a silicon planar phototransistor detec-
tor, and is incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal
transmission between two electrically separated
circuits.
The couplers are end-stackable with 2.54 mm
spacing.
Creepage and clearance distances of >8 mm are
achieved with option 6. This version complies with
IEC 950 (DIN VDE 0805) for reinforced insulation
up to an operation voltage of 400 V
RMS
or DC.
Dimensions in inches (mm)
2
1
Pin One I.D.
.268 (6.81)
.255 (6.48)
Anode
1
Cathode
2
4
Collector
3
Emitter
3
4
.190 (4.83)
.179 (4.55)
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
.135 (3.43)
.115 (2.92)
4°
Typ.
.022 (.56)
.018 (.46)
.040 (1.02)
.030 (.76 )
3°–9°
1.00 (2.54)
Typ.
10°
Typ.
.305
(7.75)
.012 (.30)
.008 (.20)
Maximum Ratings
Emitter
Reverse Voltage...................................................................................... 6 V
DC Forward Current........................................................................... 60 mA
Surge Forward Current (t
P
≤10 µs)
....................................................... 2.5 A
Total Power Dissipation................................................................... 100 mW
Detector
Collector-Emitter Voltage ..................................................................... 70 V
Emitter-Collector Voltage ........................................................................ 7 V
Collector Current................................................................................ 50 mA
Collector Current (t
P
≤1
ms).............................................................. 100 mA
Total Power Dissipation................................................................... 150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74.................................................................... 5300 VAC
RMS
Creepage ...........................................................................................≥7 mm
Clearance ..........................................................................................≥7 mm
Insulation Thickness between Emitter and Detector ......................
≥0.4
mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1....................................................≥175
Isolation Resistance
V
IO
=500 V, T
A
=25°C .....................................................................≥10
12
Ω
V
IO
=500 V, T
A
=100°C ...................................................................≥10
11
Ω
Storage Temperature Range................................................. –55 to +150°C
Ambient Temperature Range ................................................ –55 to +100°C
Junction Temperature .........................................................................100°C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
≥1.5
mm)...............................................260°C
1
Figure 1. Current transfer ratio (typ.)
vs. temperature
I
F
=10 mA, V
CE
=0.5 V
Figure 2. Output characteristics (typ.)
Collector current vs. collector-emitter
voltage
T
A
=25°C
Figure 3. Diode forward voltage
(typ.) vs. forward current
Figure 4. Transistor capacitance
(typ.) vs. collector-emitter voltage
T
A
=25°C, f=1 MHz
20
pF
15
Figure 5. Permissiable pulse handling
capability. Fwd. current vs. pulse
width
Pulse cycle D=parameter, T
A
=25°C
Figure 6. Permissible power
dissipation vs. ambient temp.
C
10
5
C
CE
0
10
-2
10
-1
10
-0
10
1
V
Ve
10
2
Figure 7. Permissible diode
forward current vs. ambient temp.
SFH615AA/AGB/AGR
3
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