电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SFH615AGR

产品描述Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-4
产品类别光电子/LED    光电   
文件大小419KB,共3页
制造商Infineon(英飞凌)
官网地址http://www.infineon.com/
下载文档 详细参数 选型对比 全文预览

SFH615AGR在线购买

供应商 器件名称 价格 最低购买 库存  
SFH615AGR - - 点击查看 点击购买

SFH615AGR概述

Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-4

SFH615AGR规格参数

参数名称属性值
是否Rohs认证不符合
包装说明PLASTIC, DIP-4
Reach Compliance Codecompliant
其他特性UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min70 V
配置SINGLE
标称电流传输比100%
最大暗电源100 nA
最大正向电流0.06 A
最大绝缘电压5300 V
JESD-609代码e0
元件数量1
最高工作温度100 °C
最低工作温度-55 °C
光电设备类型TRANSISTOR OUTPUT OPTOCOUPLER
端子面层Tin/Lead (Sn/Pb)
Base Number Matches1

文档预览

下载PDF文档
SFH615AA/AGB/AGR/ABM/
ABL/AY/AB
5.3 kV TRIOS
Optocoupler
High Reliability
FEATURES
• Variety of Current Transfer Ratios at 5.0 mA
– AA: 50–600%
– AGB: 100–600%
– AGR: 100–300%
– ABM: 200–400%
– ABL: 200–600%
– AY: 50–150%
– AB: 80–260%
• Low CTR Degradation
• Good CTR Linearity Depending on Forward
Current
• Isolation Test Voltage, 5300 V
RMS
• High Collector-emitter Voltage,
V
CEO
=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS (TRansparent IOn
Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100" (2.54 mm) Spacing
• High Common-mode Interference Immunity
(Unconnected Base)
• Underwriters Lab File #52744
V
VDE 0884 Available with Option 1
D E
Dimensions in inches (mm)
2
1
pin one ID
.255 (6.48)
.268 (6.81)
Anode 1
Cathode 2
3
4
4 Collector
3 Emitter
.179 (4.55)
.190 (4.83)
.030 (.76)
.045 (1.14)
.031 (.79) typ.
.050 (1.27) typ.
.130 (3.30)
.150 (3.81)
typ.
.018 (.46)
.022 (.56)
10°
.020 (.508 )
.035 (.89)
.050 (1.27)
0.100 (2.54)
3°–9°
.008 (.20)
.012 (.30)
.300 (7.62) typ.
.230 (5.84)
.250 (6.35)
.110 (2.79)
.130 (3.30)
DESCRIPTION
The SFH615XXX features a large assortment of cur-
rent transfer ratio, low coupling capacitance and high
isolation voltage. These couplers have a GaAs infra-
red emitting diode emitter, which is optically coupled
to a silicon planar phototransistor detector, and is
incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of >8 mm are
achieved with option 6. This version complies with IEC
950 (DIN VDE 0805) for reinforced insulation up to an
operation voltage of 400 V
RMS
or DC.
Maximum Ratings
Emitter
Reverse Voltage ................................................................................6.0 V
DC Forward Current ........................................................................60 mA
Surge Forward Current (t
P
10
µ
s) ....................................................2.5 A
Total Power Dissipation ................................................................100 mW
Detector
Collector-Emitter Voltage....................................................................70 V
Emitter-Collector Voltage...................................................................7.0 V
Collector Current.............................................................................50 mA
Collector Current (t
P
1.0 ms)........................................................100 mA
Total Power Dissipation ................................................................150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74 ......................................................................5300 V
RMS
Creepage ...................................................................................
7.0 mm
Clearance...................................................................................
7.0 mm
Insulation Thickness between Emitter and Detector..................
0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1...............................................
175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C ................................................................
10
12
V
IO
=500 V,
T
A
=100
°
C ..............................................................
10
11
Storage Temperature Range..............................................–55 to +150
°
C
Ambient Temperature Range .............................................–55 to +100
°
C
Junction Temperature ..................................................................... 100
°
C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
1.5 mm) ........................................... 260
°
C
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–239
March 1, 2001-11

SFH615AGR相似产品对比

SFH615AGR SFH615ABM SFH615AA SFH615AGB SFH615AY
描述 Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-4 Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-4 Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-4 Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-4 Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-4
是否Rohs认证 不符合 不符合 不符合 不符合 不符合
包装说明 PLASTIC, DIP-4 PLASTIC, DIP-4 PLASTIC, DIP-4 PLASTIC, DIP-4 PLASTIC, DIP-4
Reach Compliance Code compliant compliant compliant compliant not_compliant
其他特性 UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min 70 V 70 V 70 V 70 V 70 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE
标称电流传输比 100% 200% 50% 100% 50%
最大暗电源 100 nA 100 nA 100 nA 100 nA 100 nA
最大正向电流 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A
最大绝缘电压 5300 V 5300 V 5300 V 5300 V 5300 V
JESD-609代码 e0 e0 e0 e0 e0
元件数量 1 1 1 1 1
最高工作温度 100 °C 100 °C 100 °C 100 °C 100 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C
光电设备类型 TRANSISTOR OUTPUT OPTOCOUPLER TRANSISTOR OUTPUT OPTOCOUPLER TRANSISTOR OUTPUT OPTOCOUPLER TRANSISTOR OUTPUT OPTOCOUPLER TRANSISTOR OUTPUT OPTOCOUPLER
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
厂商名称 - Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌)

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 626  2363  656  345  1541  13  48  14  7  32 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved