TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Unidirectional and Bidirectional
Transient Voltage Suppressor
- High Reliability controlled devices
- Economical series for thru hole mounting
- Unidirectional (A) and Bidirectional (CA) construction
- Selections for 40 to 400 V standoff voltages (V
WM
)
LEVELS
M, MA, MX, MXL
DEVICES
MRT100KP40A thru MRT100KP400CA, e3
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Suppresses transients up to 100 kW @ 6.4/69 µs
Fast response with less than 5ns turn-on time
Preferred 100kW TVS for aircraft power bus protection
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes
specify various screening and conformance inspection options based on MIL-PRF-19500.
Refer to
MicroNote 129
for more details on the screening options.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS Compliant devices available by adding “e3” suffix
3σ lot norm screening performed on Standby Current I
D
CASE 5A
APPLICATIONS / BENEFITS
Protection from high power switching transients, induced RF, and lightning threats with
comparatively small package size (0.25 inch diameter)
Protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4
Pin injection protection per RTCA/DO-160E up to Level 4 for Waveform 4 (6.4/69 µs) on all
devices
Pin injection protection per RTCA/DO-160E up to Level 5 for Waveform 4 (6.4/69 µs) on device
types MRT100KP33A or CA up to MRT100KP260A or CA
Pin injection protection per RTCA/DO-160E up to Level 3 for Waveform 5A (40/120 µs) on all
devices
Pin injection protection per RTCA/DO-160E up to Level 4 for Waveform 5A (40/120 µs) on
device types MRT100KP33A or CA up to MRT100KP64A or CA
Consult Factory for other voltages with similar Peak Pulse Power capabilities
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 ºC: 100 kW at @ 6.4/69 µs in Figure 8 (also see Figures 1
and 2)
impulse repetition rate (duty factor) of 0.005 %
t
clamping
(0 volts to V
BR
min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
º
Operating and Storage temperature: -65 C to +150 °C
Thermal Resistance: 17.5 °C/W junction to lead, or 77.5 °C/W junction to ambient when
2
mounted on FR4 PC board with 4 mm copper pads (1 oz ) and track width 1 mm, length 25
mm
Steady-state power dissipation: 7 Watts @ T
L
= 27.5 °C or 1.61 Watts at T
A
= 25 °C when
mounted on FR4 PC Board described above for thermal resistance
Forward surge: 250 Amps 8.3 ms half-sine wave for unidirectional devices only
Solder temperatures: 260 °C for 10 s (maximum)
RF01012 Rev A, August 2010
High Reliability Product Group
Page 1 of 5
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
MECHANICAL AND PACKAGING
Void-free transfer molded thermosetting epoxy body meeting UL94V-0 requirements
Tin-Lead (90 % Sn, 10 % Pb) or RoHS (100% Sn) Compliant annealed matte-Tin plating readily solderable per
MIL-STD-750, method 2026
Body marked with part number
Cathode indicated by band. No cathode band on bi-directional devices.
Weight: 1.7 grams (approximate)
Available in bulk or custom tape-and-reel packaging
TAPE-AND-REEL standard per EIA-296 (add “TR” suffix to part number)
PACKAGE DIMENSIONS
NOTE:
Cathode indicated by band
All dimensions in inches
millimeters
SYMBOLS & DEFINITIONS
Symbol
V
WM
P
PP
V
BR
I
D
Definition
Working Peak (Standoff) Voltage
Peak Pulse Power
Breakdown Voltage
Standby Current
Symbol
I
PP
V
C
Definition
Peak Pulse Current
Clamping Voltage
Breakdown Current for V
BR
I
BR
RF01012 Rev A, August 2010
High Reliability Product Group
Page 2 of 5
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
ELECTRICAL CHARACTERISTICS @ 25
o
C
Rated
Stand-off
Voltage
V
WM
VOLTS
RT100KP40A
RT100KP43A
RT100KP45A
RT100KP48A
RT100KP51A
RT100KP54A
RT100KP58A
RT100KP60A
RT100KP64A
RT100KP70A
RT100KP75A
RT100KP78A
RT100KP85A
RT100KP90A
RT100KP100A
RT100KP110A
RT100KP120A
RT100KP130A
RT100KP150A
RT100KP160A
RT100KP170A
RT100KP180A
RT100KP200A
RT100KP220A
RT100KP250A
RT100KP260A
RT100KP280A
RT100KP300A
RT100KP350A
RT100KP400A
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
110
120
130
150
160
170
180
200
220
250
260
280
300
350
400
Part
Number
(1) (4)
Breakdown Voltage
V
(BR)
Volts
@ I
(BR)
V
(BR)
I
(BR)
VOLTS
44.4-49.1
47.8-52.8
50.0-55.3
53.3-58.9
56.7-62.7
60.0-66.3
64.4-71.2
66.7-73.7
71.1-78.6
77.8-86.0
83.3-92.1
86.7-95.8
94.4-104
100-111
111-123
122-135
133-147
144-159
167-185
178-197
189-209
200-221
222-245
245-271
278-308
289-320
311-345
333-369
389-431
444-492
Maximum
Clamping
@ I
PP
(2)
V
C
VOLTS
78.6
84.5
88.5
94.3
101
106
114
118
126
138
147
153
166
178
197
216
235
254
296
315
334
354
392
434
493
512
552
590
690
787
mA
20
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Maximum
Reverse
Leakage
@ V
WM
I
D
Amps
1500
500
150
150
50
25
15
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Maximum
Peak Pulse
Current (3)
@6.4/69 µs
I
PP
Amps
1273 *
1184 *
1130 *
1061 *
990 *
943 *
878
848
795
725
680
655
602
563
508
463
426
394
338
318
300
283
256
231
203
196
181
170
145
127
Maximum
V
(BR)
temperature
Coefficient
V(BR)
mV/
o
C
46
50
52
56
60
63
68
71
76
83
89
93
102
109
121
133
145
157
183
195
207
219
243
269
306
318
344
368
430
490
NOTE 1:
NOTE 2:
For bidirectional construction, indicate a CA suffix (instead of A) after the part number
Clamping voltage does not include any variable parasitic lead inductance effects observed during the 6.4 µs rise time
due to lead length
The Maximum Peak Pulse Current (I
PP
) shown represents the performance capabilities by design.
* Surge test screening is only performed up to 900 Amps (test equipment limitations)
Part numbers in bold italics are preferred devices
NOTE 3:
NOTE 4:
RF01012 Rev A, August 2010
High Reliability Product Group
Page 3 of 5
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
GRAPHS
P
PP
Peak Pulse Power vs. Pulse Time – kW
Non-Repetitive Pulse
tp – Pulse Time – sec.
FIGURE 1
Peak Pulse Power vs. Pulse Time
To 50% of Exponentially Decaying Pulse
NOTE: This P
PP
versus time graph allows the designer to use these parts over a broad
power spectrum using the guidelines illustrated in MicroNote 104 on
www.microsemi.com. Aircraft transients are described with exponential decaying
waveforms. For suppression of square-wave impulses, derate power and current to
66% of that for exponential decay shown in Figure 1.
Peak Pulse Power (P
PP
) or continuous
Power in % of 25
o
C
rating
T
L
Lead Temperature
o
C
FIGURE 2
POWER DERATING
Correct
INSTALLATION
TVS devices used across power lines are
subject to relatively high magnitude surge
currents and are more prone to adverse
parasitic inductance effects in the
mounting leads. Minimizing the shunt
path of the lead inductance and their
V = -Ldi/dt effects will optimize the TVS
effectiveness.
Examples of optimum
installation and poor installation are
illustrated in Figures 3 to 6. Figure 3
illustrates minimal parasitic inductance
with attachment at end of device.
Inductive voltage drop is across input
leads. Virtually no “overshoot” voltage
results as illustrated with Figure 4. The
loss of effectiveness in protection caused
by excessive parasitic inductance is
illustrated in Figures 5 and 6. Also see
MicroNote 111 for further information on
“Parasitic Lead Inductance in TVS”.
Incorrect
FIGURE 3
FIGURE 5
FIGURE 4
RF01012 Rev A, August 2010
High Reliability Product Group
FIGURE 6
Page 4 of 5
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
GRAPHS Cond.
t
t – time
t – time
Note: frequency is 1MHz
t - Time
FIGURE 8 –
Waveform 4
FIGURE 9 –
Waveform 5A
FIGURE 7 –
Waveform 3
NOTE: The 1MHz damped oscillatory waveform (3) has an effective pulse width of 4
s.
Equivalent peak pulse power at each of
the pulse widths represented in RTCA/DO-160E for waveforms 3, 4 and 5A (above) have been determined referencing Figure 1
herein as well as MicroNotes 104 and 120 (found on
www.microsemi.com)
and are listed below.
WAVEFORM
NUMBER
PULSE
WIDTH
s
4
6.4/69
40/120
PEAK PULSE
POWER
kW
340
100
70
Peak Pulse Current Conversion Factor
* from Rated I
PP
at 6.4/69 µs
3
4
5A
3.40x
1.00x
0.70x
* Multiply by the conversion factor shown with reference to the maximum rated I
PP
in the Electrical Characteristics Table on page 2.
NOTE 1:
High current fast rise-time transients of 250 ns or less can more than triple the V
C
from parasitic inductance effects
(V= -Ldi/dt) compared to the clamping voltage shown in the initial Electrical Characteristics as also described in
Figures 5 and 6 herein
Also see MicroNotes 127, 130, and 132 on
www.microsemi.com
for further information on Transient Voltage
Suppressors with reference to aircraft industry specification RTCA/DO-160E.
NOTE 2:
RF01012 Rev A, August 2010
High Reliability Product Group
Page 5 of 5
Microchip MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
