Datasheet
Serial EEPROM Series Automotive EEPROM
125℃ Operation Microwire BUS EEPROM(3-Wire)
BR93Hxx-WC
(2K 4K 8K 16K)
●General
Description
BR93Hxx-WC is a serial EEPROM of serial 3-line interface method.
●Features
Conforming to Microwire BUS
Withstands electrostatic voltage 8kV,
(HBM method typ.,except BR93H66RFVM-WC)
Wide temperature range -40℃ to +125℃
Same package line up and same pin configuration
2.7V to 5.5V single supply voltage operation
Address auto increment function at read operation
Write mistake prevention function
Write prohibition at power on
Write prohibition by command code
Write mistake prevention circuit at low voltage
Program cycle auto delete and auto end function
Program condition display by READY / BUSY
Low current consumption
At write operation (at 5V)
: 0.6mA (Typ.)
At read operation (at 5V)
: 0.6mA (Typ.)
At standby condition (at 5V) : 0.1μA(Typ.)(CMOS input)
Built-in noise filter CS, SK, DI terminals
High reliability by ROHM original Double-Cell structure
Data retention for 20 years (Ta≦125℃)
Endurance up to 300,000 times (Ta≦125℃)
Data at shipment all address FFFFh
●Packages
W(Typ.) x D(Typ.) x H(Max.)
SOP8
5.00mm x 6.20mm x 1.71mm
SOP-J8
4.90mm x 6.00mm x 1.65mm
MSOP8
2.90mm x 4.00mm x 0.90mm
●BR93Hxx-WC
Package type
Capacity
2Kbit
4Kbit
8Kbit
16Kbit
Bit format
128×16
256×16
512×16
1K×16
Type
BR93H56-WC
BR93H66-WC
BR93H76-WC
BR93H86-WC
Power source
voltage
2.7V to 5.5V
2.7V to 5.5V
2.7V to 5.5V
2.7V to 5.5V
SOP8
RF
●
●
●
●
SOP-J8
RFJ
●
●
●
●
●
MSOP8
RFVM
○Product
structure：Silicon monolithic integrated circuit
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½14½001
○This
product is not designed protection against radioactive rays
1/27
TSZ02201-0R1R0G100160-1-2
31Aug.2012 Rev.001
BR93Hxx-WC (2K 4K 8K 16K)
●Absolute
Maximum Ratings
(Ta=25℃)
Parameter
Symbol
Impressed voltage
V
CC
Permissible dissipation
Storage temperature range
Operating temperature range
Terminal voltage
Pd
Tstg
Topr
‐
Datasheet
Limits
-0.3 to +6.5
560 (SOP8)
560 (SOP-J8)
380 (MSOP8)
-65 to +150
-40 to +125
-0.3 to V
CC
+0.3
Unit
V
mW
℃
℃
V
Remarks
When using at Ta=25℃ or higher, 4.5mW, to be reduced per 1℃.
When using at Ta=25℃ or higher, 4.5mW, to be reduced per 1℃.
When using at Ta=25℃ or higher, 3.1mW, to be reduced per 1℃.
●Memory
Cell Characteristics(V
CC
=2.7V to 5.5V)
Parameter
*1
Endurance
Data retention
*1
*1：Not 100％ TESTED
Min.
1,000,000
500,000
300,000
40
20
Limit
Typ.
-
-
-
-
-
Max.
-
-
-
-
-
Limit
Times
Times
Times
Years
Years
Limit
Ta≦85℃
Ta≦105℃
Ta≦125℃
Ta≦25℃
Ta≦125℃
●Recommended
Operating Ratings
Parameter
Power source voltage
Input voltage
Symbol
V
CC
V
IN
Limits
2.7 to 5.5
0 to V
CC
Unit
V
●Electrical
Characteristics(Unless
otherwise specified, Ta=-40℃ to +125℃, V
CC
=2.7V to 5.5V)
Limits
Parameter
Symbol
Unit
Conditions
Min.
Typ.
Max.
“L” input voltage
V
IL
-0.3
-
0.3x V
CC
V
“H” input voltage
V
IH
0.7x V
CC
-
V
CC
+0.3
V
“L” output voltage 1
V
OL1
0
-
0.4
V
I
OL
=2.1mA, 4.0V≦V
CC
≦5.5V
“L” output voltage 2
V
OL2
0
-
0.2
V
I
OL
=100μA
“H” output voltage 1
V
OH1
2.4
-
V
CC
V
I
OH
=-0.4mA, 4.0V≦V
CC
≦5.5V
“H” output voltage 2
V
OH2
V
CC
-0.2
-
V
CC
V
I
OH
=-100μA
Input leak current
I
LI
-10
-
10
μA
V
IN
=0V to V
CC
Output leak current
I
LO
-10
-
10
μA
V
OUT
=0V to V
CC
, CS=0V
I
CC1
-
-
3.0
mA
f
SK
=1.25MHz, t
E/W
=10ms (WRITE)
Current consumption
I
CC2
-
-
1.5
mA
f
SK
=1.25MHz (READ)
I
CC3
-
-
4.5
mA
f
SK
=1.25MHz, t
E/W
=10ms (WRAL)
Standby current
I
SB
-
0.1
10
μA
CS=0V, DO=OPEN
●Operating
Timing Characteristics
(Unless otherwise specified, Ta=-40℃ to +125℃, V
CC
=2.7V to 5.5V)
Parameter
Symbol
Min.
Typ.
Max.
SK frequency
f
SK
-
-
1.25
SK “H” time
t
SKH
250
-
-
SK “L” time
t
SKL
250
-
-
CS “L” time
t
CS
200
-
-
CS setup time
t
CSS
200
-
-
DI setup time
t
DIS
100
-
-
CS hold time
t
CSH
0
-
-
DI hold time
t
DIH
100
-
-
Data “1” output delay time
t
PD1
-
-
300
Data “0” output delay time
t
PD0
-
-
300
Time from CS to output establishment
t
SV
-
-
200
Time from CS to High-Z
t
DF
-
-
200
Write cycle time
t
E/W
-
7
10
Write cycle time(BR93H66RFVM-WC)
t
E/W
-
-
5
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
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©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½15½001
2/27
TSZ02201-0R1R0G100160-1-2
31Aug.2012 Rev.001
BR93Hxx-WC (2K 4K 8K 16K)
●Sync
data input / output timing
Datasheet
CS
tCSS
tSKH
tSKL
tCSH
SK
tDIS
tDIH
DI
t PD0
tPD1
DO(READ)
tDF
DO(WRITE)
STATUS VALID
○Data
is taken by DI sync with the rise of SK.
○At
read operation, data is output from DO in sync with the rise of SK.
○The
status signal at write (READY / BUSY) is output after tCS from the fall of CS after write command input, at the area
DO where CS is “H”, and valid until the next command start bit is input. And, white CS is “L”, DO becomes High-Z.
○After
completion of each mode execution, set CS “L” once for internal circuit reset, and execute the following operation
mode.
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©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½15½001
3/27
TSZ02201-0R1R0G100160-1-2
31Aug.2012 Rev.001
BR93Hxx-WC (2K 4K 8K 16K)
●Block
Diagram
Datasheet
CS
Command decode
Control
Power source voltage detection
SK
Clock generation
Write
prohibition
High voltage occurrence
DI
Command
register
Address
buffer
7bit
8bit
9bit
10bit
Address
decoder
7bit
8bit
9bit
10bit
Data
register
DO
Dummy bit
16bit
R/W
amplifier
16bit
2,048 bit
4,096 bit
8,192 bit
16,384 bit
EEPROM
●Pin
Configurations
TOP VIEW
V
CC
8
NC
7
TEST
6
GND
5
V
CC
8
TOP VIEW
TEST2
7
TEST1
6
GND
5
BR93H56RF-WC:SOP8
BR93H56RFJ-WC:SOP-J8
BR93H66RF-WC:SOP8
BR93H66RFJ-WC:SOP-J8
BR93H66RFVM-WC:MSOP8
BR93H76RF-WC:SOP8
BR93H76RFJ-WC:SOP-J8
BR93H86RF-WC:SOP8
BR93H86RFJ-WC:SOP-J8
4
1
2
3
4
1
CS
2
SK
3
DI
DO
CS
SK
DI
DO
●Pin
Descriptions
Pin name
Vcc
GND
CS
SK
DI
DO
NC
TEST1
TEST2
TEST
I/O
-
-
Input
Input
Input
Output
-
-
-
-
Power source
All input / output reference voltage, 0V
Chip select input
Serial clock input
Start bit, ope code, address, and serial data input
Serial data output, READY / BUSY internal condition display output
Non connected terminal, Vcc, GND or OPEN
TEST terminal, GND or OPEN
TEST terminal, Vcc, GND or OPEN
TEST terminal, GND or OPEN
Function
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©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½15½001
4/27
TSZ02201-0R1R0G100160-1-2
31Aug.2012 Rev.001
BR93Hxx-WC (2K 4K 8K 16K)
●Typical
Performance Curves
(The following characteristic data are Typ. values.)
Datasheet
Figure 1. H input voltage VIH (CS, SK, DI)
Figure 2. L input voltage VIL (CS, SK, DI)
Figure 3. L output voltage VOL-IOL (VCC=2.7)
Figure 4. L output voltage VOL-IOL
(VCC=4.0V)
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©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½15½001
5/27
TSZ02201-0R1R0G100160-1-2
31Aug.2012 Rev.001
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