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HYM7V65800ATFG1-10P

产品描述Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168
产品类别存储    存储   
文件大小284KB,共14页
制造商SK Hynix(海力士)
官网地址http://www.hynix.com/eng/
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HYM7V65800ATFG1-10P概述

Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168

HYM7V65800ATFG1-10P规格参数

参数名称属性值
零件包装代码DIMM
包装说明,
针数168
Reach Compliance Codeunknown
ECCN代码EAR99
访问模式DUAL BANK PAGE BURST
最长访问时间6 ns
JESD-30 代码R-XDMA-N168
内存密度536870912 bit
内存集成电路类型SYNCHRONOUS DRAM MODULE
内存宽度64
功能数量1
端口数量1
端子数量168
字数8388608 words
字数代码8000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织8MX64
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
认证状态Not Qualified
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装NO
技术CMOS
温度等级COMMERCIAL
端子形式NO LEAD
端子位置DUAL
Base Number Matches1

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PC100 SDRAM Unbuffered DIMM
8Mx64bit F1-Series
based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8Krefresh
HYM7V65800A/HYM7V65801A/ HYM7V65830A/ HYM7V65831A
Preliminary
DESCRIPTION
The HYM7V65800A/ 65801A/ 65830A/ 65831A F1-Series are high speed 3.3-Volt synchronous dynamic
RAM Modules composed of eight 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit
E
2
PROM on a 168-pin glass-epoxy printed circuit board. One 0.22µF and one 0.0022µF decoupling
capacitors per each SDRAM are mounted on the module.
The HYM7V65800A/ 65801A/ 65830A/ 65831A F1-Series are gold plated socket type Dual In-line
Memory Modules suitable for easy interchange and addition of 64M bytes memory. All addresses, data and
control inputs are latched on the rising edge of the master clock input. The data paths are internally pipelined
to achieve very high bandwidths.
FEATURES
1.000” (25.40mm) PCB Height
168-Pin Unbuffered DIMM with Double Sided
One 0.22µF and one 0.0022µF decoupling
capacitors adopted
Serial Presence Detect with Serial E
2
PROM
Meets all the other JEDEC specifications
Single 3.3V±0.3V power supply
All device pins are LVTTL compatible
4096 refresh cycles every 64ms or 8192 refresh
cycles every 128ms
Fully synchronous ; all inputs referenced to
positive edge of system clock
Dual or Quad internal banks with single pulsed
/RAS
Auto precharge/precharge all banks by A
10
flag
Possible to assert random column address
every clock cycle
Interleaved auto refresh mode
Programmable burst lengths and sequences
- 1,2,4,8,full page for Sequential type
- 1,2,4,8 for Interleave type
Programmable /CAS latency ; 2,3 clocks
Support clock suspend/power down mode by
CKE0
Data mask function by DQM
Mode register set programming
Burst termination command
Self refresh provides minimum power, full
internal refresh control
ORDERING INFORMATION
Part No.
HYM7V65800ATFG1 - 8/10P/10S
HYM7V65801ATFG1- 8/10P/10S
HYM7V65830ATFG1- 8/10P/10S
HYM7V65831ATFG1- 8/10P/10S
Max. Frequency
125/ 100/ 100 MHz
125/ 100/ 100 MHz
125/ 100/ 100 MHz
125/ 100/ 100 MHz
SDRAM Bank
2 Banks
4 Banks
2 Banks
4 Banks
Ref.
4K
4K
8K
8K
Package
TSOPII
TSOPII
TSOPII
TSOPII
Plating
Gold
Gold
Gold
Gold
BASED COMPONENTS
Module Part No.
HYM7V65800ATFG1
HYM7V65801ATFG1
Based Comp. Part No.
HY57V658010ATC
HY57V658020ATC
Module Part No.
HYM7V65830ATFG1
HYM7V65831ATFG1
Based Comp. Part No.
HY57V648010ATC
HY57V648020ATC
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Dec. 1998
Preliminary Rev.B

 
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