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HM66WP36513FP-65

产品描述512KX36 ZBT SRAM, 6.5ns, PQFP100, LQFP-100
产品类别存储    存储   
文件大小261KB,共31页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
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HM66WP36513FP-65概述

512KX36 ZBT SRAM, 6.5ns, PQFP100, LQFP-100

HM66WP36513FP-65规格参数

参数名称属性值
零件包装代码QFP
包装说明LQFP,
针数100
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
最长访问时间6.5 ns
其他特性FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY
JESD-30 代码R-PQFP-G100
长度20 mm
内存密度18874368 bit
内存集成电路类型ZBT SRAM
内存宽度36
功能数量1
端子数量100
字数524288 words
字数代码512000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织512KX36
封装主体材料PLASTIC/EPOXY
封装代码LQFP
封装形状RECTANGULAR
封装形式FLATPACK, LOW PROFILE
并行/串行PARALLEL
认证状态Not Qualified
座面最大高度1.6 mm
最大供电电压 (Vsup)2.625 V
最小供电电压 (Vsup)2.375 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子形式GULL WING
端子节距0.65 mm
端子位置QUAD
宽度14 mm
Base Number Matches1

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HM66WP18101/HM66WP36513
18M Flow Through Zero Bus Latency (ZBL) SRAM
(HM66WP18101) 1-Mword
×
18-bit
(HM66WP36513) 512-Kword
×
36-bit
ADE-203-1299C (Z)
Preliminary
Rev. 0.3
Mar. 29, 2002
Description
The HM66WP18101 is a synchronous fast static RAM organized as 1-Mword
×
18-bit. The
HM66WP36513 is a synchronous fast static RAM organized as 512-Kword
×
36-bit. It has realized high
speed access time by employing the most advanced CMOS process and high speed circuit designing
technology. It is most appropriate for the application which requires high speed, high density memory and
wide bit width configuration, such as cache and buffer memory in system. It is packaged in standard 100-
pin LQFP and 119-pin BGA.
Note: All power supply(V
DD
,V
DDQ
) and ground(V
SS
) pins must be connected for proper operation of the
device.
ZBL: Zero Bus Latency and compatible ZBT SRAM. ZBT
TM
TM
is trademark of Integrated Device Technology, Inc.,
Features
3.3 V or 2.5V power supply, 3.3 V or 2.5 V I/O supply voltage
Clock frequency: 133/117/100 MHz
Fast clock access time: 6.5/7.5/8.5 ns (max)
Low operating current: 250/220/200 mA (max)
Address data pipeline capability
Internal input registers (Address, Data, Control)
Internal self-timed write cycle
ADV/LD burst control pins
Asynchronous output enable controlled three-state outputs
Individual byte write control
Power down state via ZZ
Common data inputs and data outputs
High board density 100-pin LQFP package and 119-pin BGA package
Burst contorol selected pin
LBO
(Interleave or linear burst oder)
Preliminary: The specifications of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specifications.

HM66WP36513FP-65相似产品对比

HM66WP36513FP-65 HM66WP36513BP-75 HM66WP36513FP-75 HM66WP18101BP-85 HM66WP36513BP-65 HM66WP18101FP-75 HM66WP36513FP-85 HM66WP18101BP-65 HM66WP36513BP-85
描述 512KX36 ZBT SRAM, 6.5ns, PQFP100, LQFP-100 512KX36 ZBT SRAM, 7.5ns, PBGA119, BGA-119 512KX36 ZBT SRAM, 7.5ns, PQFP100, LQFP-100 1MX18 ZBT SRAM, 8.5ns, PBGA119, BGA-119 512KX36 ZBT SRAM, 6.5ns, PBGA119, BGA-119 1MX18 ZBT SRAM, 7.5ns, PQFP100, LQFP-100 512KX36 ZBT SRAM, 8.5ns, PQFP100, LQFP-100 1MX18 ZBT SRAM, 6.5ns, PBGA119, BGA-119 512KX36 ZBT SRAM, 8.5ns, PBGA119, BGA-119
零件包装代码 QFP BGA QFP BGA BGA QFP QFP BGA BGA
包装说明 LQFP, BGA, LQFP, BGA, BGA, LQFP, LQFP, BGA, BGA,
针数 100 119 100 119 119 100 100 119 119
Reach Compliance Code compliant compliant unknown compliant compliant unknown compliant compliant compli
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 6.5 ns 7.5 ns 7.5 ns 8.5 ns 6.5 ns 7.5 ns 8.5 ns 6.5 ns 8.5 ns
其他特性 FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY
JESD-30 代码 R-PQFP-G100 R-PBGA-B119 R-PQFP-G100 R-PBGA-B119 R-PBGA-B119 R-PQFP-G100 R-PQFP-G100 R-PBGA-B119 R-PBGA-B119
长度 20 mm 22 mm 20 mm 22 mm 22 mm 20 mm 20 mm 22 mm 22 mm
内存密度 18874368 bit 18874368 bit 18874368 bit 18874368 bit 18874368 bit 18874368 bit 18874368 bit 18874368 bit 18874368 bi
内存集成电路类型 ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM
内存宽度 36 36 36 18 36 18 36 18 36
功能数量 1 1 1 1 1 1 1 1 1
端子数量 100 119 100 119 119 100 100 119 119
字数 524288 words 524288 words 524288 words 1048576 words 524288 words 1048576 words 524288 words 1048576 words 524288 words
字数代码 512000 512000 512000 1000000 512000 1000000 512000 1000000 512000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 512KX36 512KX36 512KX36 1MX18 512KX36 1MX18 512KX36 1MX18 512KX36
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LQFP BGA LQFP BGA BGA LQFP LQFP BGA BGA
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLATPACK, LOW PROFILE GRID ARRAY FLATPACK, LOW PROFILE GRID ARRAY GRID ARRAY FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE GRID ARRAY GRID ARRAY
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.6 mm 2.35 mm 1.6 mm 2.35 mm 2.35 mm 1.6 mm 1.6 mm 2.35 mm 2.35 mm
最大供电电压 (Vsup) 2.625 V 2.625 V 2.625 V 2.625 V 2.625 V 2.625 V 2.625 V 2.625 V 2.625 V
最小供电电压 (Vsup) 2.375 V 2.375 V 2.375 V 2.375 V 2.375 V 2.375 V 2.375 V 2.375 V 2.375 V
标称供电电压 (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
表面贴装 YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 GULL WING BALL GULL WING BALL BALL GULL WING GULL WING BALL BALL
端子节距 0.65 mm 1.27 mm 0.65 mm 1.27 mm 1.27 mm 0.65 mm 0.65 mm 1.27 mm 1.27 mm
端子位置 QUAD BOTTOM QUAD BOTTOM BOTTOM QUAD QUAD BOTTOM BOTTOM
宽度 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm
厂商名称 - Renesas(瑞萨电子) - Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子)
JESD-609代码 - e1 - e1 e1 - - e1 e1
端子面层 - TIN SILVER COPPER - TIN SILVER COPPER TIN SILVER COPPER - - TIN SILVER COPPER TIN SILVER COPPER

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