512KX36 ZBT SRAM, 6.5ns, PQFP100, LQFP-100
| 参数名称 | 属性值 |
| 零件包装代码 | QFP |
| 包装说明 | LQFP, |
| 针数 | 100 |
| Reach Compliance Code | compliant |
| ECCN代码 | 3A991.B.2.A |
| 最长访问时间 | 6.5 ns |
| 其他特性 | FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY |
| JESD-30 代码 | R-PQFP-G100 |
| 长度 | 20 mm |
| 内存密度 | 18874368 bit |
| 内存集成电路类型 | ZBT SRAM |
| 内存宽度 | 36 |
| 功能数量 | 1 |
| 端子数量 | 100 |
| 字数 | 524288 words |
| 字数代码 | 512000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 512KX36 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | LQFP |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLATPACK, LOW PROFILE |
| 并行/串行 | PARALLEL |
| 认证状态 | Not Qualified |
| 座面最大高度 | 1.6 mm |
| 最大供电电压 (Vsup) | 2.625 V |
| 最小供电电压 (Vsup) | 2.375 V |
| 标称供电电压 (Vsup) | 2.5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子形式 | GULL WING |
| 端子节距 | 0.65 mm |
| 端子位置 | QUAD |
| 宽度 | 14 mm |
| Base Number Matches | 1 |

| HM66WP36513FP-65 | HM66WP36513BP-75 | HM66WP36513FP-75 | HM66WP18101BP-85 | HM66WP36513BP-65 | HM66WP18101FP-75 | HM66WP36513FP-85 | HM66WP18101BP-65 | HM66WP36513BP-85 | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | 512KX36 ZBT SRAM, 6.5ns, PQFP100, LQFP-100 | 512KX36 ZBT SRAM, 7.5ns, PBGA119, BGA-119 | 512KX36 ZBT SRAM, 7.5ns, PQFP100, LQFP-100 | 1MX18 ZBT SRAM, 8.5ns, PBGA119, BGA-119 | 512KX36 ZBT SRAM, 6.5ns, PBGA119, BGA-119 | 1MX18 ZBT SRAM, 7.5ns, PQFP100, LQFP-100 | 512KX36 ZBT SRAM, 8.5ns, PQFP100, LQFP-100 | 1MX18 ZBT SRAM, 6.5ns, PBGA119, BGA-119 | 512KX36 ZBT SRAM, 8.5ns, PBGA119, BGA-119 |
| 零件包装代码 | QFP | BGA | QFP | BGA | BGA | QFP | QFP | BGA | BGA |
| 包装说明 | LQFP, | BGA, | LQFP, | BGA, | BGA, | LQFP, | LQFP, | BGA, | BGA, |
| 针数 | 100 | 119 | 100 | 119 | 119 | 100 | 100 | 119 | 119 |
| Reach Compliance Code | compliant | compliant | unknown | compliant | compliant | unknown | compliant | compliant | compli |
| ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
| 最长访问时间 | 6.5 ns | 7.5 ns | 7.5 ns | 8.5 ns | 6.5 ns | 7.5 ns | 8.5 ns | 6.5 ns | 8.5 ns |
| 其他特性 | FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY | FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY | FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY | FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY | FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY | FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY | FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY | FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY | FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY |
| JESD-30 代码 | R-PQFP-G100 | R-PBGA-B119 | R-PQFP-G100 | R-PBGA-B119 | R-PBGA-B119 | R-PQFP-G100 | R-PQFP-G100 | R-PBGA-B119 | R-PBGA-B119 |
| 长度 | 20 mm | 22 mm | 20 mm | 22 mm | 22 mm | 20 mm | 20 mm | 22 mm | 22 mm |
| 内存密度 | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bi |
| 内存集成电路类型 | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM |
| 内存宽度 | 36 | 36 | 36 | 18 | 36 | 18 | 36 | 18 | 36 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 100 | 119 | 100 | 119 | 119 | 100 | 100 | 119 | 119 |
| 字数 | 524288 words | 524288 words | 524288 words | 1048576 words | 524288 words | 1048576 words | 524288 words | 1048576 words | 524288 words |
| 字数代码 | 512000 | 512000 | 512000 | 1000000 | 512000 | 1000000 | 512000 | 1000000 | 512000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 512KX36 | 512KX36 | 512KX36 | 1MX18 | 512KX36 | 1MX18 | 512KX36 | 1MX18 | 512KX36 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | LQFP | BGA | LQFP | BGA | BGA | LQFP | LQFP | BGA | BGA |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLATPACK, LOW PROFILE | GRID ARRAY | FLATPACK, LOW PROFILE | GRID ARRAY | GRID ARRAY | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE | GRID ARRAY | GRID ARRAY |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 1.6 mm | 2.35 mm | 1.6 mm | 2.35 mm | 2.35 mm | 1.6 mm | 1.6 mm | 2.35 mm | 2.35 mm |
| 最大供电电压 (Vsup) | 2.625 V | 2.625 V | 2.625 V | 2.625 V | 2.625 V | 2.625 V | 2.625 V | 2.625 V | 2.625 V |
| 最小供电电压 (Vsup) | 2.375 V | 2.375 V | 2.375 V | 2.375 V | 2.375 V | 2.375 V | 2.375 V | 2.375 V | 2.375 V |
| 标称供电电压 (Vsup) | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子形式 | GULL WING | BALL | GULL WING | BALL | BALL | GULL WING | GULL WING | BALL | BALL |
| 端子节距 | 0.65 mm | 1.27 mm | 0.65 mm | 1.27 mm | 1.27 mm | 0.65 mm | 0.65 mm | 1.27 mm | 1.27 mm |
| 端子位置 | QUAD | BOTTOM | QUAD | BOTTOM | BOTTOM | QUAD | QUAD | BOTTOM | BOTTOM |
| 宽度 | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm |
| 厂商名称 | - | Renesas(瑞萨电子) | - | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
| JESD-609代码 | - | e1 | - | e1 | e1 | - | - | e1 | e1 |
| 端子面层 | - | TIN SILVER COPPER | - | TIN SILVER COPPER | TIN SILVER COPPER | - | - | TIN SILVER COPPER | TIN SILVER COPPER |
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