TN1625
TYN616, TYN816
16 A standard SCRs
Features
■
■
■
A
I
T(RMS)
=16 A
V
DRM
/V
RRM
= 600 to 1000 V
I
GT
= 25 mA
G
K
Description
The standard TN16 / TYNx16 16 A SCRs series
is suitable for general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current
capabilities.
K A
G
A
A
K
A
G
D
2
PAK
(TN1625-x00G)
TO-220AB
(TYNx16RG)
Table 1.
Device summary
TN1625-600G
TYN616RG
600
25
TYN816RG
800
25
1000
25
TN1625-1000G
Unit
V
mA
Parameter
V
DRM
/V
RRM
Sensitivity
November 2007
Rev 6
1/9
www.st.com
9
Characteristics
TN1625, TYN616, TYN816
1
Table 2.
Symbol
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
V
RGM
Characteristics
Absolute ratings (limiting values)
Parameter
RMS on-state current (180 °Conduction angle)
Average on-state current (180 °Conduction angle)
Non repetitive surge peak on-state current
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 10 ms
F = 60 Hz
t
p
= 20 µs
T
c
= 110 °C
T
c
= 110 °C
T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
Value
16
10
200
A
190
180
50
4
1
- 40 to + 150
- 40 to + 125
5
A
2
S
A/µs
A
W
°C
V
Unit
A
A
Table 3.
Symbol
I
GT
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Test Conditions
MIN.
V
D
= 12 V
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 x I
GT
V
D
= 67 % V
DRM
Gate open
I
TM
= 32 A
t
p
= 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
R
L
= 33
Ω
R
L
= 3.3 kΩ
Gate open
T
j
= 125 °C
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
Value
2
25
1.3
0.2
40
60
500
1.6
0.77
23
5
2
Unit
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
Table 4.
Symbol
R
th(j-c)
R
th(j-a)
Thermal resistance
Parameter
Junction to case (DC)
S = 01 cm
2
Junction to ambient (DC)
TO-220AB
60
D
2
PAK
Value
1.1
45
°C/W
Unit
°C/W
S = copper surface under tab
2/9
TN1625, TYN616, TYN816
Characteristics
Figure 1.
Maximum average power
Figure 2.
dissipation versus average on-state
current
I
T(AV)
(A)
18
Average and D.C. on-state current
versus case temperature
P(W)
16
14
12
10
8
8
α
= 180°
D.C.
16
14
12
α
= 180°
10
6
4
2
0
0
2
4
6
8
360°
6
4
2
0
I
T(AV)
(A)
α
10
12
T
case
(°C)
0
25
50
75
100
125
Figure 3.
Average and D.C. on-state current Figure 4.
versus ambient temperature
(copper surface under tab: S=1cm
2
)
(D
2
PAK)
1.00
Relative variation of thermal
impedance versus pulse duration
I
T(AV)
(A)
4.0
3.5
3.0
D.C.
K=[Z
th
/R
th
]
Z
th(j-c)
2.5
2.0
1.5
1.0
0.5
α
= 180°
0.10
Z
th(j-a)
T
amb
(°C)
0.0
0
25
50
75
100
125
t
p
(s)
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Figure 5.
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature
Figure 6.
Surge peak on-state current versus
number of cycles
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
2.5
200
180
I
TSM
(A)
2.0
160
140
Non repetitive
T
j
initial=25°C
t
p
=10ms
One cycle
1.5
I
GT
120
100
Repetitive
T
C
=110°C
1.0
I
H
& I
L
80
60
0.5
40
T
j
(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
20
0
1
10
Number of cycles
100
1000
3/9
Characteristics
TN1625, TYN616, TYN816
Figure 7.
Non-repetitive surge peak on-state Figure 8.
current for a sinusoidal pulse with
width t
p
< 10 ms, and
corresponding values of I
2
t
I
TM
(A)
200
T
j
initial = 25°C
On-state characteristics (maximum
values)
I
TSM
(A), I
2
t (A
2
s)
2000
1000
I
TSM
100
T
j
max.:
V
t0
=0.77V
R
d
=23m
Ω
dI/dt limitation
I
2
t
T
j
=max
100
10
T
j
=25°C
t
p
(ms)
10
0.01
0.10
1.00
10.00
1
0.0
0.5
1.0
1.5
V
TM
(V)
2.0
2.5
3.0
3.5
4.0
4.5
Figure 9.
Thermal resistance junction to
ambient versus copper surface
under tab
(epoxy printed circuit board FR4,
copper thickness: 35 µm) (D
2
PAK)
R
th(j-a)
(°C/W)
80
70
60
50
40
30
20
10
S(cm²)
0
0
4
8
12
16
20
24
28
32
36
40
4/9
TN1625, TYN616, TYN816
Ordering information scheme
2
Ordering information scheme
Figure 10. TN1625
TN 16 25 - 600 G (-TR)
Standard SCR series
Current
16 = 16 A
Sensitivity
25 = 25 mA
Voltage
600 = 600 V
1000 = 1000 V
Package
G = D2PAK
Packing mode
Blank = Tube
-TR = Tape and reel
Figure 11. TYNx16
TYN
Standard SCR series
Voltage
6 = 600 V
8 = 800 V
Current
16 = 16 A
Packing mode
RG = Tube
6
16
RG
5/9
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