DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBTA56
PNP general purpose transistor
Product specification
Supersedes data of 1997 Apr 22
1999 Apr 09
Philips Semiconductors
Product specification
PNP general purpose transistor
FEATURES
•
High current (max. 500 mA)
•
Low voltage (max. 80 V).
APPLICATIONS
•
General purpose switching and amplification, e.g.
telephony and professional communication equipment.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complement: PMBTA06.
PINNING
PIN
1
2
3
base
emitter
collector
PMBTA56
DESCRIPTION
handbook, halfpage
3
3
1
MARKING
TYPE NUMBER
PMBTA56
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
MARKING CODE
(1)
∗2G
Top view
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−80
−80
−5
−500
−1
−200
250
+150
150
+150
UNIT
V
V
V
mA
A
mA
mW
°C
°C
°C
1999 Apr 09
2
Philips Semiconductors
Product specification
PNP general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
f
T
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−80
V
I
C
= 0; V
EB
=
−5
V
I
C
=
−10
mA; V
CE
=
−1
V
I
C
=
−100
mA; V
CE
=
−1
V
collector-emitter saturation voltage I
C
=
−100
mA; I
B
=
−10
mA
base-emitter voltage
transition frequency
I
C
=
−100
mA; V
CE
=
−1
V
I
C
=
−100
mA; V
CE
=
−1
V;
f = 100 MHz
−
−
100
100
−
−
50
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
PMBTA56
UNIT
K/W
MAX.
−50
−50
−
−
−250
−1.2
−
UNIT
nA
nA
mV
V
MHz
1999 Apr 09
3
Philips Semiconductors
Product specification
PNP general purpose transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
PMBTA56
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 09
4
Philips Semiconductors
Product specification
PNP general purpose transistor
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Limiting values
PMBTA56
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 09
5
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