SMOS44N80
Power MOSFETs
(T
J
=25
o
C,
unless otherwise specified)
Symbol
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
Test Conditions
V
GS
=0V; I
D
=3 mA
V
DS
=V
GS
; I
D
=8 mA
V
GS
=±20V
DC
; V
DS
=0
V
DS
=V
DSS
; T
J
=25
o
C
V
GS
=0V; T
J
=125
o
C
V
GS
=10V; I
D
=0.5I
D25
Pulse test, t 300us;
duty cycle d 2%
Characteristic Values
min.
typ.
max.
800
2
4.5
±200
100
2
0.145
Unit
V
V
nA
uA
mA
(T
J
=25
o
C,
unless otherwise specified)
Symbol
g
ts
C
ies
C
oes
C
res
Q
g(on)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
thJC
R
thCK
Test Conditions
V
DS
=15V; I
D
=0.5I
D25
; pulse test
V
GS
=0V; V
DS
=25V; f=1MHz
Characteristic Values
min.
typ.
max.
32
45
14500
1300
330
380
70
170
35
48
100
24
0.18
0.05
Unit
S
pF
V
GS
=10V; V
DS
=0.5V
DSS'
; I
D
=0.5I
D25
nC
ns
ns
ns
ns
K/W
K/W
V
GS
=10V; V
DS
=0.5V
DSS
; I
D
=0.5I
D25
R
G
=1 (External)