SUR2x60-02
Ultra Fast Recovery Epitaxial Diodes
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
Millimeter
Min.
Max.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
37.80
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
3.30
0.780
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.20
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
4.57
0.830
Inches
Min.
Max.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.489
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
0.130
19.81
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
0.180
21.08
SUR2x60-02
V
RSM
V
200
V
RRM
V
200
R
S
T
U
V
W
Symbol
I
FRMS
I
FAVM
I
FRM
Test Conditions
T
VJ
=T
VJM
T
C
=85
o
C; rectangular, d=0.5
t
p
<10us; rep. rating, pulse width limited by T
VJM
T
VJ
=45
o
C
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
Maximum Ratings
100
71
800
950
1020
800
870
4500
4300
3200
3140
-40...+150
150
-40...+150
Unit
A
I
FSM
T
VJ
=150
o
C
T
VJ
=45
o
C
A
I
2
t
T
VJ
=150 C
o
A
2
s
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
M
d
Weight
T
C
=25
o
C
50/60Hz, RMS
_
I
ISOL
<1mA
Mounting torque
Terminal connection torque (M4)
o
C
150
2500
1.1-1.5/9-13
1.1-1.5/9-13
30
W
V~
Nm/lb.in.
g
SUR2x60-02
Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
T
VJ
=25
o
C; V
R
=V
RRM
T
VJ
=25
o
C; V
R
=0.8
.
V
RRM
T
VJ
=125
o
C; V
R
=0.8
.
V
RRM
I
F
=60A; T
VJ
=150
o
C
T
VJ
=25
o
C
For power-loss calculations only
T
VJ
=T
VJM
Characteristic Values
typ.
max.
50
40
11
0.88
1.08
0.7
3.0
0.8
0.05
Unit
uA
uA
mA
V
V
m
K/W
ns
A
I
R
V
F
V
TO
r
T
R
thJC
R
thCK
t
rr
I
RM
I
F
=1A; -di/dt=200A/us; V
R
=30V; T
VJ
=25
o
C
_
V
R
=100V; I
F
=60A; -di
F
/dt=200A/us; L<0.05uH; T
VJ
=100
o
C
35
8
50
10
FEATURES
* International standard package
miniBLOC (ISOTOP compatible)
* Isolation voltage 2500 V~
* 2 independent FRED in 1
package
* Planar passivatd chips
* Very short recovery time
* Extremely low switching losses
* Low I
RM
-values
* Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
SUR2x60-02
Ultra Fast Recovery Epitaxial Diodes
160
A
140
Q
r
I
F
120
100
80
T
VJ
=150°C
0.8
C
0.6
T
VJ
= 100°C
V
R
= 100V
30
T
VJ
= 100°C
A
V = 100V
R
25
I
RM
I
F
= 35A
I
F
= 70A
I
F
=140A
20
15
10
I
F
= 35A
I
F
= 70A
I
F
=140A
0.4
60
T
VJ
=100°C
40
20
T
VJ
=25°C
0.2
5
0.0
10
0
100
A/us 1000
-di
F
/dt
0
200
400
600 A/us 1000
800
-di
F
/dt
0
0.0
0.4
0.8
V
F
1.2 V
Fig. 1 Forward current I
F
versus V
F
Fig. 2 Typ. reverse recovery charge Q
r
versus -di
F
/dt
70
ns
60
t
rr
50
40
T
VJ
= 100°C
V
R
= 100V
Fig. 3 Typ. peak reverse current I
RM
versus -di
F
/dt
5
V
V
FR
4
t
fr
V
FR
1.6
1.4
K
f
1.2
1.0
0.8
0.6
0.4
0.2
0
40
80
120 °C 160
T
VJ
Q
r
I
RM
2.5
T
VJ
= 100°C
I
F
= 100A
us
2.0
t
fr
3
I
F
=35A
I
F
=70A
I
F
=140A
1.5
30
20
2
1.0
1
10
0
0
200
400
600 A/us
-di
F
/dt
1000
0
0
200
400
600
di
F
/dt
0.5
0.0
800
A/us
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
1
K/W
Fig. 5 Typ. recovery time t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage V
FR
and t
fr
versus di
F
/dt
Z
thJC
0.1
Constants for
Z
thJC
calculation:
R
thi
/ (K/W) t
i
/ (s)
0.1000
0.3400
0.3600
0.00014
0.00600
0.16500
0.01
0.0001
0.001
0.01
0.1
1
t
s
10
Fig. 7 Transient thermal impedance junction to case
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