SUR2x30-08, SUR2x30-10
Ultra Fast Recovery Epitaxial Diodes
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
Millimeter
Min.
Max.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
37.80
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
3.30
0.780
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.20
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
4.57
0.830
Inches
Min.
Max.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.489
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
0.130
19.81
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
0.180
21.08
SUR2x30-08
SUR2x30-10
V
RSM
V
800
1000
V
RRM
V
800
1000
P
Q
R
S
T
U
V
W
Symbol
I
FRMS
I
FAVM
I
FRM
Test Conditions
T
VJ
=T
VJM
T
C
=50
o
C; rectangular, d=0.5
t
p
<10us; rep. rating, pulse width limited by T
VJM
T
VJ
=45
o
C
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
Maximum Ratings
70
30
375
200
210
185
195
200
180
170
160
-40...+150
150
-40...+150
Unit
A
I
FSM
T
VJ
=150
o
C
T
VJ
=45
o
C
A
I
2
t
T
VJ
=150 C
o
A
2
s
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
M
d
Weight
T
C
=25
o
C
50/60Hz, RMS
_
I
ISOL
<1mA
Mounting torque
Terminal connection torque (M4)
o
C
100
2500
1.5/13
1.5/13
30
W
V~
Nm/lb.in.
g
SUR2x30-08, SUR2x30-10
Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
T
VJ
=25
o
C; V
R
=V
RRM
T
VJ
=25
o
C; V
R
=0.8
.
V
RRM
T
VJ
=125
o
C; V
R
=0.8
.
V
RRM
I
F
=30A; T
VJ
=150
o
C
T
VJ
=25
o
C
For power-loss calculations only
T
VJ
=T
VJM
Characteristic Values
typ.
max.
750
250
7
2
2.4
1.5
12.5
1.25
0.05
Unit
uA
uA
mA
V
V
m
K/W
ns
A
I
R
V
F
V
TO
r
T
R
thJC
R
thCK
t
rr
I
RM
I
F
=1A; -di/dt=100A/us; V
R
=30V; T
VJ
=25
o
C
_
V
R
=540V; I
F
=30A; -di
F
/dt=240A/us; L<0.05uH; T
VJ
=100
o
C
35
16
50
18
FEATURES
* International standard package
miniBLOC (ISOTOP compatible)
* Isolation voltage 2500 V~
* 2 independent FRED in 1
package
* Planar passivatd chips
* Very short recovery time
* Extremely low switching losses
* Low I
RM
-values
* Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
SUR2x30-08, SUR2x30-10
Ultra Fast Recovery Epitaxial Diodes
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -di
F
/dt.
Fig. 3 Peak reverse current versus
-di
F
/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -di
F
/dt.
Fig. 6 Peak forward voltage
versus di
F
/dt.
Fig. 7 Transient thermal impedance junction to case.
模拟电子
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