SUR1560S
Ultra Fast Recovery Epitaxial Diodes
C(TAB)
A
A
NC
A=Anode, NC= No connection, TAB=Cathode
C
Dimensions TO-263(D
2
PAK)
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
Millimeter
Min.
Max.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
8.00
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.89
Inches
Min. Max.
.160
.080
.020
.045
.018
.045
.340
.315
.190
.110
.039
.055
.029
.055
.380
.350
9.65
10.29
6.22
8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
0.46
15.88
2.79
1.40
1.78
0.20
0.74
.380
.405
.245
.320
.100 BSC
.575
.090
.040
.050
0
.018
.625
.110
.055
.070
.008
.029
SUR1560S
V
RSM
V
600
V
RRM
V
600
1.
2.
3.
4.
Gate
Collector
Emitter
Collector
Botton Side
L
L1
L2
L3
L4
R
Symbol
I
FRMS
I
FAVM
I
FRM
Test Conditions
T
VJ
=T
VJM
T
C
=100
o
C; rectangular, d=0.5
t
p
<10us; rep. rating, pulse width limited by T
VJM
T
VJ
=45
o
C
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
Maximum Ratings
25
15
150
100
110
85
95
50
50
36
37
-40...+150
150
-40...+150
Unit
A
I
FSM
T
VJ
=150
o
C
T
VJ
=45
o
C
A
I
2
t
T
VJ
=150 C
o
A
2
s
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
T
C
=25
o
C
Mounting torque
o
C
62
0.4...0.6
2
W
Nm
g
SUR1560S
Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
T
VJ
=25
o
C; V
R
=V
RRM
T
VJ
=25
o
C; V
R
=0.8
.
V
RRM
T
VJ
=125
o
C; V
R
=0.8
.
V
RRM
I
F
=16A; T
VJ
=150
o
C
T
VJ
=25
o
C
For power-loss calculations only
T
VJ
=T
VJM
Characteristic Values
typ.
max.
50
25
3
1.5
1.7
1.12
23.2
2
0.5
60
Unit
uA
uA
mA
V
V
m
K/W
I
R
V
F
V
TO
r
T
R
thJC
R
thCK
R
thJA
t
rr
I
RM
I
F
=1A; -di/dt=200A/us; V
R
=30V; T
VJ
=25
o
C
_
V
R
=100V; I
F
=60A; -di
F
/dt=200A/us; L<0.05uH; T
VJ
=100
o
C
35
4
50
4.4
ns
A
FEATURES
* International standard package
JEDEC TO-263
* Planar passivatd chips
* Very short recovery time
* Extremely low switching losses
* Low I
RM
-values
* Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
SUR1560S
Ultra Fast Recovery Epitaxial Diodes
F ig. 1 F orward current
vers us voltage drop.
F ig. 2 R ecovery charge vers us -di
F
/dt.
F ig. 3 P eak revers e current vers us
-di
F
/dt.
F ig. 4 Dynamic parameters vers us
junction temperature.
F ig. 5 R ecovery time vers us -di
F
/dt.
F ig. 6 P eak forward voltage
vers us di
F
/dt.
F ig. 7 T rans ient thermal impedance junction to cas e.
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