SUR20100 thru SUR20120
Ultra Fast Recovery Epitaxial Diodes
Dimensions TO-220AC
A
C(TAB)
A
C
C
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
A=Anode, C=Cathode, TAB=Cathode
SUR20100
SUR20120
V
RSM
V
1000
1200
V
RRM
V
1000
1200
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
-
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
-
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Symbol
I
FRMS
I
FAVM
I
FRM
I
FSM
Test Conditions
T
VJ
=T
VJM
T
C
=85
o
C; rectangular, d=0.5
t
p
<10us; rep. rating, pulse width limited by T
VJM
T
VJ
=45
o
C
T
VJ
=150
o
C
T
VJ
=45
o
C
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
Maximum Ratings
70
17
220
130
140
110
120
85
80
60
60
-40...+150
150
-40...+150
Unit
A
A
I
2
t
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
T
VJ
=150 C
o
A
2
s
o
C
T
C
=25
o
C
Mounting torque
78
0.4...0.6
2
W
Nm
g
SUR20100 thru SUR20120
Ultra Fast Recovery Epitaxial Diodes
Symbol
I
R
Test Conditions
T
VJ
=25
o
C; V
R
=V
RRM
T
VJ
=25
o
C; V
R
=0.8
.
V
RRM
T
VJ
=125
o
C; V
R
=0.8
.
V
RRM
I
F
=12A; T
VJ
=150
o
C
T
VJ
=25
o
C
For power-loss calculations only
T
VJ
=T
VJM
Characteristic Values
typ.
max.
750
250
7
1.87
2.15
1.65
18.2
1.6
60
I
F
=1A; -di/dt=100A/us; V
R
=30V; T
VJ
=25
o
C
_
V
R
=540V; I
F
=20A; -di
F
/dt=100A/us; L<0.05uH; T
VJ
=100
o
C
40
7
60
Unit
uA
uA
mA
V
V
m
K/W
ns
A
V
F
V
TO
r
T
R
thJC
R
thJA
t
rr
I
RM
FEATURES
* International standard package
* Glass passivated chips
* Very short recovery time
* Extremely low losses at high
switching frequencies
* Low I
RM
-values
* Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Anti saturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
SUR20100 thru SUR20120
Ultra Fast Recovery Epitaxial Diodes
70
A
60
50
I
F
40
30
20
10
0
0
1
V
F
2
T
V J
= 25°C
T
V J
=100°C
T
V J
=150°C
Q
r
3
2
1
0
4
1
10
-di
F
/dt
100 A/ s 1000
T
VJ
=100°C
C
V
R
= 540V
5
4
I
F
=30A
I
F
=60A
I
F
=30A
I
F
=15A
6
50
A
40
I
R M
T
V J
=100°C
V
R
= 540V
I
F
=30A
I
F
=60A
I
F
=30A
I
F
=15A
max.
30
20
max.
typ.
10
typ.
3 V
0
0
200
-di
F
/dt
400 A/ s
600
F ig. 1 F orward current
vers us voltage drop.
1.4
1.2
1.0
K
f
0.8
0.6
0.4
0.2
0.0
0
40
T
VJ
80
120 °C 160
F ig. 2 R ecovery charge vers us -di
F
/dt.
1.0
s
0.9
0.8
F ig. 3 P eak revers e current vers us
-di
F
/dt.
60
V
50
40
30
20
t
fr
1200
ns
V
FR
1000
800
600
400
200
0
T
VJ
=100°C
V
R
=540V
I
R M
t
rr
0.7
0.6
0.5
max.
I
F
=30A
I
F
=60A
I
F
=30A
I
F
=15A
V
FR
t
fr
Q
R
0.4
0.3
0.2
0.1
0
200
-di
F
/dt
typ.
10
0
0
200
-di
F
/dt
T
V J
=125°C
I
F
=30A
400 A/ s 600
400 A/ s 600
F ig. 4 Dynamic parameters vers us
junction temperature.
F ig. 5 R ecovery time vers us -di
F
/dt.
F ig. 6 P eak forward voltage
vers us di
F
/dt.
F ig. 7 T rans ient thermal impedance junction to cas e.
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