SUR120120
Ultra Fast Recovery Epitaxial Diodes
Dimensions TO-247AC
A
C(TAB)
C
A
C
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Millimeter
Min. Max.
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32
5.4
1.65
-
1.0
10.8
4.7
0.4
1.5
5.49
6.2
2.13
4.5
1.4
11.0
5.3
0.8
2.49
Inches
Min.
Max.
0.780
0.819
0.610
0.140
0.170
0.212
0.065
-
0.040
0.426
0.185
0.016
0.087
0.800
0.845
0.640
0.144
0.216
0.244
0.084
0.177
0.055
0.433
0.209
0.031
0.102
A=Anode, C=Cathode, TAB=Cathode
V
RSM
V
1200
V
RRM
V
1200
SUR12060
Symbol
I
FRMS
I
FAVM
I
FRM
Test Conditions
T
VJ
=T
VJM
T
C
=60
o
C; rectangular, d=0.5
t
p
<10us; rep. rating, pulse width limited by T
VJM
T
VJ
=45
o
C
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
Maximum Ratings
100
120
tbd
600
660
540
600
1800
1800
1450
1500
-40...+150
150
-40...+150
Unit
A
I
FSM
T
VJ
=150
o
C
T
VJ
=45
o
C
A
I
2
t
T
VJ
=150 C
o
A
2
s
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
T
C
=25
o
C
Mounting torque
o
C
357
0.8...1.2
6
W
Nm
g
SUR120120
Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
T
VJ
=25
o
C; V
R
=V
RRM
T
VJ
=25
o
C; V
R
=0.8
.
V
RRM
T
VJ
=125
o
C; V
R
=0.8
.
V
RRM
I
F
=70A; T
VJ
=150
o
C
T
VJ
=25
o
C
For power-loss calculations only
T
VJ
=T
VJM
Characteristic Values
typ.
max.
3
1.5
20
1.55
1.8
1.2
4.6
0.35
0.25
35
Unit
uA
uA
mA
V
V
m
K/W
I
R
V
F
V
TO
r
T
R
thJC
R
thCK
R
thJA
t
rr
I
RM
I
F
=1A; -di/dt=200A/us; V
R
=30V; T
VJ
=25
o
C
_
V
R
=350V; I
F
=75A; -di
F
/dt=200A/us; L<0.05uH; T
VJ
=100
o
C
40
25
60
30
ns
A
FEATURES
* International standard package
JEDEC TO-247AC
* Planar passivatd chips
* Very short recovery time
* Extremely low switching losses
* Low I
RM
-values
* Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
SUR120120
Ultra Fast Recovery Epitaxial Diodes
150
A
125
I
F
100
T
V J
=150°C
16
T = 100°C
VJ
C
V = 600V
R
14
Q
r
12
10
8
T
V J
=100°C
I
F
=140A
I
F
= 70A
I
F
= 35A
120
T
V J
= 100°C
A
V
R
= 600V
100
I
R M
80
60
40
20
0
I
F
=140A
I
F
= 70A
I
F
= 35A
75
50
T
V J
= 25°C
6
4
2
25
0
0.0
0.5
1.0
1.5 V 2.0
V
F
0
100
A/ s 1000
-di
F
/dt
0
200
400
600 A/ s 1000
800
-di
F
/dt
F ig. 1 F orward current I
F
vers us V
F
F ig. 2 R evers e recovery charge Q
r
vers us -di
F
/dt
500
ns
450
t
rr
400
350
300
T
V J
= 100°C
V
R
= 600V
F ig. 3 P eak revers e current I
R M
vers us -di
F
/dt
60
V
50
V
FR
40
t
fr
V
FR
T
V J
= 100°C
I
F
= 100A
1.4
1.5
s
t
fr
1.0
1.2
K
f
1.0
I
R M
0.8
I
F
=140A
I
F
= 70A
I
F
= 35A
30
20
10
0
0.0
1000
A/ s
0.5
0.6
Q
r
250
200
0.4
0
40
80
120 °C 160
T
VJ
0
200
400
600 A/ s
800
-di
F
/dt
1000
0
200
400
600 800
di
F
/dt
F ig. 4 Dynamic parameters Q
r
, I
R M
vers us T
VJ
1
K /W
F ig. 5 R ecovery time t
rr
vers us -di
F
/dt
F ig. 6 P eak forward voltage V
F R
and t
fr
vers us di
F
/dt
C ons tants for Z
thJ C
calculation:
i
R
thi
(K /W)
0.017
0.0184
0.1296
0.185
t
i
(s )
0.00038
0.0026
0.0387
0.274
D=0.7
0.5
Z
thJC
0.1
0.3
0.2
0.01
0.05
S ingle P ulse
1
2
3
4
0.01
0.001
DS E I 120-12
0.01
0.1
1s
t
10
F ig. 7 T rans ient thermal res is tance junction to cas e
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