Crystal oscillator
HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-710 series
Product number (please refer to page 1)
Q33 7 1 0 x x x x x x x 0 0
•
•
•
•
Ceramic package with 1.5 mm thickness.
Excellent environmental capability.
Low current consumption due to use of C-MOS technology.
Low current consumption by output enable function (OE) or standby function
(ST).
Actual size
Specifications (characteristics)
Item
Output frequency range
Power source
voltage
Temperature
range
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
Symbol
f
0
V
DD
-GND
V
DD
T
STG
T
OPR
∆f/f
0
13 mA Max.
24 mA Max.
—
—
6 mA Max.
12 mA Max.
—
—
—
—
45 % to 55 %
2.4 V Min.
0.4 V Max.
10 TTL Max.
(15 pF Max.)
2.0 V Min.
0.8 V Max.
—
5 ns Max.
—
5 ns Max.
45 % to 55 %
40 % to 60 %
V
DD
-0.5 V Min.
0.5 V Max.
10 TTL Max.
50 pF Max.
2.0 V Min.
0.8 V Max.
5 ns Max.
—
5 ns Max.
—
10 ms Max.
±5
x 10 /year Max.
-6
Specifications
SG-710PTK
1.8000 MHz to
50.0000 MHz
SG-710PHK
SG-710ECK
1.8000 MHz to
1.8000 MHz to
80.0000 MHz
67.0000 MHz
-0.5 V to +7.0 V
5.0 V
±0.5
V
3.3 V
±0.3
V
-55
°C
to +125
°C
-10
°C
to +70
°C
(-40
°C
to +85
°C)
15 mA Max.
26 mA Max.
34 mA Max.
40 mA Max.
5 mA Max.
10 mA Max.
13 mA Max.
16 mA Max.
8 mA Max.
15 mA Max.
18 mA Max.
—
—
—
—
—
10
µA
Max.
40 % to 60 %
—
0.9 x V
DD
Min.
0.1 x V
DD
Max.
—
15 pF Max.
0.7 x V
DD
Min.
0.3 x V
DD
Max.
6 ns Max.
6 ns Max.
Remarks
Refer to page 31. "Frequency range"
Stored as bare product after unpacking
Refer to page 31. "Frequency range"
B,C:-10
°C
to +70
°C,
M:-40
°C
to +85
°C
Fo
≤
25 MHz, No load condition (ECK: Fo
≤
32 MHz, No load condition)
Fo
≤
50 MHz, No load condition
Fo
≤
67 MHz, No load condition
Fo
≤
80 MHz, No load condition
Fo
≤
25 MHz, OE=GND(PTK, PHK)
Fo
≤
50 MHz, OE=GND(PTK, PHK)
Fo
≤
67 MHz, OE=GND(PTK, PHK)
Fo
≤
80 MHz, OE=GND(PTK, PHK)
ST=GND(ECK)
CMOS load: 1/2 V
DD
level
TTL load: 1.4 V level
IOH=-16 mA(PTK,PHK),-2 mA(ECK)
IOL= 16 mA(PTK,PHK), 2 mA(ECK)
Frequency stability
B:
±50
x 10
-6
C:
±
100 x 10
-6
M:
±
100 x 10
-6
Current consumption
Iop
Output disable current
Standby current
Duty
High output voltage
Low output voltage
Output load
condition (fan out)
I
OE
I
ST
t
w/
t
V
OH
V
OL
N
C
L
V
IH
V
IL
t
TLH
t
THL
t
OSC
fa
S.R.
TTL
CMOS
Output enable/disable input voltage
Output rise time
Output fall time
Oscillation start up time
Aging
Shock resistance
OE terminal(PTK,PHK)
ST terminal(ECK)
CMOS load: 10 %→90 % V
DD
TTL load: 0.4 V→2.4 V
CMOS load: 90 %→10 % V
DD
TTL load: 2.4 V→0.4 V
Time at minimum operating voltage to be 0 s
Ta= +25
°C,
V
DD
= 5.0 V/3.3 V, First year
Three drops on a hard board from 750 mm
or excitation test with 29400 m/s2 x 0.3 ms x
1/2sine wave in 3 directions
±10
x 10
-6
Max.
External dimensions
#4
#3
#3
5.08
#4
L
(Unit: mm)
Recommended soldering pattern
(Unit: mm)
1.8
#1
L
#2
#2
1.4
#1
NO.
Pin terminal
1 OE or ST
2
GND
3
OUT
4
V
DD
4.2
H
Note.
OE Pin (PTK, PHK, PTW, PHW, PCW)
OE pin - "H" or "open" : Specified frequency output.
OE pin - "L" : Output is high impedance.
5.08
ST pin (STW, SHW, SCW)
ST pin - "H" or "open" : Specified frequency output.
ST pin - "L" : Output is low level (weak pull-down), oscillation stops.
ST pin (ECK)
ST pin - "H" or "open" : Specified frequency output.
ST pin - "L" : Output is high impedance., oscillation stops.
5.08
37
2.0
E 40.000
HC724A
SG -710∗∗K
7.3
±0.2
SG -710∗∗W
7.0
±0.2
2.6
W
W
4.8
±0.2
5.0
±0.2
H
1.3
±0.1
1.4
+0.1
-0.15
Crystal oscillator
Specifications (characteristics)
Item
Symbol
Specifications
SG-710PTW/STW
SG-710PHW/SHW
Output frequency range
Power source
voltage
Temperature
range
Frequency stability
Current consumption
Output disable current
Standby current
Duty
Output voltage
CMOS level
TTL level
Max. supply voltage
Operating voltage
f
O
80.0001 MHz to 135.0000 MHz
SG-710PCW/SCW
67.0001 MHz to
135.0000 MHz
Remarks
Refer to page 31. "Frequency range"
V
DD-
GND
V
DD
Storage temperature
T
STG
Operating temperature
T
OPR
∆f/f0
I
OP
I
OE
I
ST
tw/t
V
OH
V
OL
CL
V
IH
V
IL
t
TLH
Output load condition (fan out)
Output enable disable input voltage
Output rise time
Output fall time
Oscillation start up time
Aging
Shock resistance
t
THL
t
OSC
fa
S.R.
-0.5 V to +7.0 V
5.0 V
±0.5
V
3.3 V
±0.3
V
-55
°C
to +125
°C
-20
°C
to +70
°C
-40
°C
to +85
°C
-6
-6
B :
±50
x 10 C :
±100
x 10
M :
±100
x 10
-6
45 mA Max.
28 mA Max.
30 mA Max.
16 mA Max.
50
µA
Max.
—
40 % to 60 %
40 % to 60 %
—
V
DD
-0.4 V Min.
0.4 V Max.
15 pF
—
—
5 TTL + 15 pF
—
—
—
15 pF
15 pF
—
25 pF
—
2.0 V Min.
70 % V
DD
Min.
0.8 V Max.
20 % V
DD
Max.
2.0 ns Max.
—
—
4.0 ns Max.
—
—
—
3.0 ns Max.
3.0 ns Max.
2.0 ns Max.
—
—
4.0 ns Max.
—
—
—
3.0 ns Max.
3.0 ns Max.
10 ms Max.
±5
x 10
-6
/year Max.
±20
x 10
-6
Max.
Stored as bare product after unpacking
Refer to page 31. "Frequency range"
-20
°C
to +70
°C
-40
°C
to +80
°C
No load condition (fo = Max.)
OE=GND(P∗W)
ST=GND(S∗W)
CMOS load: 1/2V
DD
TTL load: 1.4 V
I
OH
= -16 mA (∗TW/HW)/-8 mA(∗CW)
I
OL
= 16 mA (∗TW/HW)/8 mA(∗CW)
fo
≤
135 MHz
fo
≤
90 MHz
fo
≤
135 MHz
fo
≤
125 MHz
OE,ST
OE,ST
TTL load: 0.8 V→2.0 V, CL = Max.
TTL load: 0.4 V→2.4 V, CL = Max.
CMOS load: 20 % V
DD
→80
% V
DD
, CL = Max.
TTL load: 2.0 V→0.8 V, CL = Max.
TTL load: 2.4 V→0.4 V, CL = Max.
CMOS load: 80 % V
DD
→20
% V
DD
, CL = Max.
Time at minimum operating voltage to be 0 s
Ta=+25
°C,
V
DD
=5.0 V / 3.0 V, First year
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s2 x 0.3 ms x 1/2
sine wave in 3 directions
38
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