RJK2009DPM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0474-0200
Rev.2.00
Aug.09.2005
Features
•
Low on-resistance
•
Low leakage current
•
High speed switching
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
D
G
1. Gate
2. Drain
3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch
≤
150°C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Pch
Note2
θch-c
Tch
Tstg
Ratings
200
±30
40
160
40
160
40
106
60
2.08
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.2.00, Aug.09.2004, page 1 of 6
RJK2009DPM
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Body-drain diode reverse recovery
charge
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
|y
fs
|
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Q
rr
Min
200
—
—
3.0
20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
33
0.029
2900
520
66
40
160
120
110
72
16
31
0.9
150
0.8
Max
—
1
±0.1
4.5
—
0.036
—
—
—
—
—
—
—
—
—
—
1.4
—
—
Unit
V
µA
µA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 200 V, V
GS
= 0
V
GS
=
±30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 20 A, V
DS
= 10 V
Note4
I
D
= 20 A, V
GS
= 10 V
Note4
V
DS
= 25 V, V
GS
= 0,
f = 1 MHz
I
D
= 20 A, V
GS
= 10 V,
R
L
= 5
Ω,
Rg = 10
Ω
V
DD
= 160 V, V
GS
= 10 V,
I
D
= 40 A
I
F
= 40 A, V
GS
= 0
Note4
I
F
= 40 A, V
GS
= 0,
diF/dt = 100 A/µs
Rev.2.00, Aug.09.2004, page 2 of 6
RJK2009DPM
Main Characteristics
Power vs. Temperature Derating
80
Pch (W)
1000
300
Maximum Safe Operation Area
60
I
D
(A)
100
30
10
Operation in
1m
s
10
10
µ
0
µ
s
s
Channel Dissipation
Drain Current
40
3
this area is
1
limited by R
DS(on)
0.3
0.1
0.03
0.01
Ta = 25°C
1
DC Operation
(Tc = 25°C)
PW = 10 ms
(1shot)
20
0
50
100
150
Tc (°C)
200
Case Temperature
100 300 1000
30
3
10
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
Typical Output Characteristics
100
10 V
7.5 V
Pulse Test
7V
100
V
DS
= 10 V
Pulse Test
80
I
D
(A)
Drain Current
I
D
(A)
80
6.5 V
60
6V
60
Drain Current
40
5.5 V
V
GS
= 5 V
40
20
20
Tc = 75°C
25°C
−25°C
8
10
V
GS
(V)
0
4
8
12
Drain to Source Voltage
16
20
V
DS
(V)
0
2
4
6
Gate to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
4
Drain to Source Saturation Voltage
V
DS(on)
(V)
Drain to Source on State Resistance
R
DS(on)
(Ω)
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
0.1
V
GS
= 10 V
0.05
3
0.02
0.01
2
I
D
= 40 A
1
20 A
10 A
0
12
4
8
Gate to Source Voltage
16
20
V
GS
(V)
0.005
0.002
0.001
1
3
Pulse Test
10
30
100 300
Drain Current I
D
(A)
1000
Rev.2.00, Aug.09.2004, page 3 of 6
RJK2009DPM
Static Drain to Source on State Resistance
vs. Temperature
0.2
V
GS
= 10 V
Pulse Test
0.16
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
100
30
10
3
75°C
1
0.3
0.1
0.1
25°C
Tc =
−25°C
0.12
20 A
I
D
= 40 A
10 A
0.08
0.04
0
−25
V
DS
= 10 V
Pulse Test
0.3
1
3
10
I
D
(A)
30
100
0
25
50
75
100 125 150
Tc (°C)
Case Temperature
Drain Current
1000
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
100000
30000
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
500
Capacitance C (pF)
200
100
50
20
10
5
2
1
1
di / dt = 100 A /
µs
V
GS
= 0, Ta = 25°C
3
10
30
100 300 1000
Reverse Drain Current I
DR
(A)
Dynamic Input Characteristics
400
16
V
GS
V
DD
= 50 V
100 V
160 V
12
V
GS
(V)
10000
3000
1000
300
100
30
10
Ciss
Coss
Crss
0
50
100
150
Drain to Source Voltage V
DS
(V)
Switching Characteristics
V
GS
= 10 V, V
DD
= 100 V
PW = 5
µs,
duty < 1 %
R
G
= 10
Ω
10000
V
DS
(V)
I
D
= 40 A
300
Switching Time t (ns)
Drain to Source Voltage
Gate to Source Voltage
1000
tf
tr
200
V
DS
8
td(off)
100
tf
td(on)
tr
10
0.1
0.3
1
3
Drain Current
10
30
I
D
(A)
100
100
V
DD
= 160 V
100 V
50 V
20
40
60
80
4
0
0
100
Gate Charge
Qg (nC)
Rev.2.00, Aug.09.2004, page 4 of 6
RJK2009DPM
Reverse Drain Current vs.
Source to Drain Voltage
100
I
DR
(A)
Gate to Source Cutoff Voltage
V
GS(off)
(V)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
V
DS
= 10 V
I
D
= 10 mA
1 mA
80
60
V
GS
= 0 V
40
10 V
20
5V
Pulse Test
0
0.4
0.8
1.2
1.6
V
SD
(V)
2.0
Source to Drain Voltage
4
Reverse Drain Current
3
0.1 mA
2
1
0
-25
0
25
50
75
100 125 150
Tc (°C)
Case Temperature
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.2
0.3
0.1
0.1
0.05
0.03
0.01
0.02
0.01
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 2.08°C/W, Tc = 25°C
e
PDM
PW
T
uls
ot p
1sh
D=
PW
T
0.003
0.001
10
µ
100
µ
1m
10 m
Pulse Width
100 m
PW (s)
1
10
100
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10Ω
Vin
10 V
V
DD
= 100 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(off)
t
f
90%
td(on)
tr
Rev.2.00, Aug.09.2004, page 5 of 6
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