MJD32C
Low voltage PNP power transistor
Datasheet
−
production data
Features
■
■
Surface-mounting TO-252 power package in
tape and reel
Complementary to the NPN type MJD31C
TAB
Application
■
3
1
DPAK
TO-252
General purpose linear and switching
equipment
Description
The device is manufactured in planar technology
with “base island” layout. The resulting transistor
shows exceptional high gain performance
coupled with very low saturation voltage.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking
MJD32C
Package
DPAK
Packaging
Tape and reel
Order code
MJD32CT4
June 2012
This is information on a product in full production.
Doc ID 13673 Rev 4
1/13
www.st.com
13
Electrical ratings
MJD32C
1
Electrical ratings
Table 2.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
TOT
T
STG
T
J
Absolute maximum ratings
Parameter
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current
Base current
Total dissipation at T
c
= 25 °C
Storage temperature
Max. operating junction temperature
Value
-100
-100
-5
-3
-5
-1
15
-65 to 150
150
Unit
V
V
V
A
A
A
W
°C
°C
Table 3.
Symbol
R
thJC
Thermal data
Parameter
Thermal resistance junction-case max
Value
8.3
50
Unit
°C/W
°C/W
R
thJPCB (1)
Thermal resistance junction-pcb max
1. When mounted on FR-4 board of 1 inch², 2 oz Cu.
2/13
Doc ID 13673 Rev 4
MJD32C
Electrical characteristics
2
Electrical characteristics
T
case
= 25 °C unless otherwise specified.
Table 4.
Symbol
I
CES
I
CEO
I
EBO
Electrical characteristics
Parameter
Collector cut-off current
(V
BE
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
(1)
Test conditions
V
CE
= - 100 V
V
CB
= - 60 V
V
EB
= - 5 V
Min.
Typ.
-
-
-
Max.
-20
-50
-0.1
Unit
µA
µA
mA
V
CEO(sus)
Collector-emitter
sustaining voltage
(I
B
= 0)
Collector-emitter
saturation voltage
Base-emitter on voltage
DC current gain
I
C
= - 30 mA
-100
-
V
V
CE(sat) (1)
V
BE(on) (1)
h
FE
I
C
= - 3 A
I
C
= - 3 A
I
C
= - 1 A
I
C
= - 3 A
_
_
I
B
= - 375 mA
V
CE
= - 4 V
25
10
-
-
-
-1.2
-1.8
50
V
V
_ _
V
CE
= - 4 V
V
CE
= - 4 V
1. Pulse test: pulse duration
≤
300 µs, duty cycle
≤
2 %
2.1
Electrical characteristic (curves)
Figure 2.
Safe operating area
Figure 3.
Derating curve
Doc ID 13673 Rev 4
3/13
Electrical characteristics
Figure 4.
DC current gain (V
CE
= - 2 V)
Figure 5.
MJD32C
DC current gain (V
CE
= - 4 V)
Figure 6.
Collector-emitter saturation
voltage
Figure 7.
Base-emitter saturation
voltage
Figure 8.
Base-emitter on voltage
Figure 9.
Resistive load switching time
(on)
4/13
Doc ID 13673 Rev 4
MJD32C
Figure 10. Resistive load switching time
(off)
Electrical characteristics
2.2
Test circuits
Figure 11. Resistive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
Doc ID 13673 Rev 4
5/13
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