HY62CT08081E
Series
32Kx8bit CMOS SRAM
Document Title
32K x8 bit 5.0V Low Power Slow SRAM
Revision History
Revision No
00
01
History
Initial
Marking Information Add
Revised
-
DC / AC Characteristics
-
AC Test Condition Add : 5pF Test Load
Revised
-
Remove L-Part
-
Change LL-Part Isb1 Limit @E.T/I.T
: 15uA => 20uA
Revised
-
Marking Information Change : SOP Type
Changed Logo
-
HYUNDAI -> hynix
-
Marking Information Change
Draft Date
Nov.01.2000
Dec.05.2000
Remark
Preliminary
Preliminary
02
Feb.13.2001
Final
03
Feb.21.2001
Final
04
Apr.30.2001
Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 04 / Apr. 2001
Hynix Semiconductor
HY62CT08081E Series
DESCRIPTION
The HY62CT08081E is a high-speed, low power
and 32,786 X 8-bits CMOS Static Random
Access Memory fabricated using Hynix's high
performance CMOS process technology. It is
suitable for use in low voltage operation and
battery back-up application. This device has a
data retention mode that guarantees data to
remain valid at the minimum power supply
voltage of 2.0 volt.
FEATURES
•
•
•
•
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Low power consumption
Battery backup
- 2.0V(min.) data retention
•
Standard pin configuration
- 28 pin 600mil PDIP
- 28 pin 330mil SOP
- 28 pin 8x13.4 mm TSOP-I
(Standard)
Standby Current(uA)
LL
10
20
20
Temperature
(°C)
0~70(Normal)
-25~85(Extended)
-40~85(Industrial)
Product
Voltage
No.
(V)
HY62CT08081E-C
5.0
HY62CT08081E-E
5.0
HY62CT08081E-I
5.0
Note 1. Current value is max.
Speed
(ns)
55/70/85
55/70/85
55/70/85
Operation
Current(mA)
10
10
10
PIN CONNECTION
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
/WE
A13
A8
A9
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
/WE
A13
A8
A9
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
/OE
A11
A9
A8
A13
/WE
Vcc
A14
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
Vss
I/O3
I/O2
I/O1
A0
A1
A2
PDIP
SOP
TSOP-I(Standard)
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
A0 ~ A14
I/O1 ~ I/O8
Vcc
Vss
Pin Function
Chip Select
Write Enable
Output Enable
Address Inputs
Data Input/Output
Power(+5.0V)
Ground
A0
BLOCK DIAGRAM
SENSE AMP
ROW DECODER
ADD INPUT BUFFER
I/O1
OUTPUT BUFFER
I/O8
COLUMN DECODER
A14
/CS
/OE
/WE
Rev 04 / Apr. 2001
CONTROL
LOGIC
WRITE DRIVER
MEMORY ARRAY
512x512
2
HY62CT08081E Series
ORDERING INFORMATION
Part No.
HY62CT08081E-DPC
HY62CT08081E-DPE
HY62CT08081E-DPI
HY62CT08081E-DGC
HY62CT08081E-DGE
HY62CT08081E-DGI
HY62CT08081E-DTC
HY62CT08081E-DTE
HY62CT08081E-DTI
Speed
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
Power
LL-part
LL-part
LL-part
LL-part
LL-part
LL-part
LL-part
LL-part
LL-part
Temp
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
Package
PDIP
SOP
TSOP-I Standard
ABSOLUTE MAXIMUM RATING (1)
Symbol
Vcc, V
IN,
V
OUT
T
A
Parameter
Power Supply, Input/Output Voltage
Operating Temperature
HY62CT08081E-C
HY62CT08081E-E
HY62CT08081E-I
Storage Temperature
Power Dissipation
Data Output Current
Lead Soldering Temperature & Time
Rating
-0.3 to 7.0
0 to 70
-25 to 85
-40 to 85
-65 to 150
1.0
50
260
•10
Unit
V
°C
°C
°C
°C
W
mA
°C•sec
T
STG
P
D
I
OUT
T
SOLDER
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
Symbol
Parameter
Min.
Vcc
Power Supply Voltage
4.5
Vss
Ground
0
V
IH
Input High Voltage
2.2
V
IL
Input Low Voltage
-0.3
(1)
Note
1. V
IL
= -3.0V for pulse width less than 50ns
Typ.
5.0
0
-
-
Max.
5.5
0
Vcc+0.3
0.8
Unit
V
V
V
V
Rev 04 / Apr. 2001
2
HY62CT08081E Series
TRUTH TABLE
/WE /OE
Mode
/CS
H
X
X
Standby
L
H
H
Output Disabled
L
H
L
Read
L
L
X
Write
Note
1. H=V
IH
, L=V
IL
, X=Don't Care
I/O Operation
High-Z
High-Z
Data Out
Data In
DC CHARACTERISTICS
Vcc = 5V
±10%,
T
A
= 0°C to 70°C (Normal) / -25°C to 85°C (Extended) / -40°C to 85°C (Industrial),
unless otherwise specified.
Symbol
Parameter
Test Condition
Min. Typ. Max.
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
-1
-
1
I
LO
Output Leakage Current
Vss < V
OUT
< Vcc, /CS = V
IH
or
-1
-
1
/
OE
=
V
IH
or /WE = V
IL
Icc
Operating Power Supply
/CS = V
IL
,
-
-
10
Current
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
I
CC1
Average Operating Current
/CS = V
IL,
V
IN
= V
IH
or V
IL,
-
-
50
Min. Duty Cycle = 100%, I
I/O =
0mA
I
SB
TTL Standby Current
/CS= V
IH,
-
-
1
(TTL Inputs)
V
IN
= V
IH
or V
IL
I
SB1
CMOS Standby Current
/CS > Vcc - 0.2V,
-
-
10
0~70°C
(CMOS Inputs)
V
IN
> Vcc - 0.2V or
V
IN
< Vss + 0.2V
-
-
20
-25~85°C or
-40~85°C
V
OL
Output Low Voltage
I
OL
= 2.1mA
-
-
0.4
V
OH
Output High Voltage
I
OH =
-1.0mA
2.4
-
-
Note : Typical values are at Vcc =5.0V, T
A
= 25°C
Unit
uA
uA
mA
mA
mA
uA
uA
V
V
Rev 04 / Apr. 2001
3
HY62CT08081E Series
AC CHARACTERISTICS
Vcc = 5V
±10%,
T
A
= 0°C to 70°C (Normal) / -25°C to 85°C (Extended) / -40°C to 85°C (Industrial)
unless otherwise specified.
-55
-70
-85
# Symbol
Parameter
Min.
Max. Min.
Max. Min
Max.
READ CYCLE
1
tRC
Read Cycle Time
55
-
70
-
85
-
2
tAA
Address Access Time
-
55
-
70
-
85
3
tACS
Chip Select Access Time
-
55
-
70
-
85
4
tOE
Output Enable to Output Valid
-
25
-
35
-
45
5
tCLZ
Chip Select to Output in Low Z
10
-
10
-
10
-
6
tOLZ
Output Enable to Output in Low Z
5
-
5
-
5
-
7
tCHZ
Chip Disable to Output in High Z
0
20
0
30
0
30
8
tOHZ
Out Disable to Output in High Z
0
20
0
30
0
30
9
tOH
Output Hold from Address Change
5
-
5
-
5
-
WRITE CYCLE
10 tWC
Write Cycle Time
55
-
70
-
85
-
11 tCW
Chip Selection to End of Write
45
-
60
-
75
-
12 tAW
Address Valid to End of Write
45
-
60
-
75
-
13 tAS
Address Set-up Time
0
-
0
-
0
-
14 tWP
Write Pulse Width
40
-
50
-
60
-
15 tWR
Write Recovery Time
0
-
0
-
0
-
16 tWHZ
Write to Output in High Z
0
20
0
25
0
30
17 tDW
Data to Write Time Overlap
25
-
30
-
40
-
18 tDH
Data Hold from Write Time
0
-
0
-
0
-
19 tOW
Output Active from End of Write
5
-
5
-
5
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC TEST CONDITIONS
T
A
= 0°C to 70°C (Normal) / -25°C to 85°C (Extended) / -40°C to 85°C (Industrial)
unless otherwise specified.
Parameter
Value
Input Pulse Level
0.8V to 2.4V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Level
1.5V
Output Load
tCLZ,tOLZ,tCHZ,tOHZ,tWHZ,tOW
CL = 5pF + 1TTL Load
Others
CL = 100pF + 1TTL Load
Rev 04 / Apr. 2001
4
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