PD-91433D
IRHNA9160
JANSR2N7425U
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number
IRHNA9160
IRHNA93160
Radiation Level
100 kRads(Si)
300 kRads(Si)
RDS(on)
0.068
0.068
I
D
-38A
-38A
QPL Part Number
JANSR2N7425U
JANSF2N7425U
SMD-2
100V, P-CHANNEL
REF: MIL-PRF-19500/655
RAD-Hard HEXFET TECHNOLOGY
Description
IRHNA9160 is part of the International Rectifier HiRel
family of products. IR HiRel RAD-Hard HEXFET
technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite
applications. These devices have been characterized for
both Total Dose and Single Event Effects (SEE). The
combination of low Rdson and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features
Single Event Effect (SEE) Hardened
Identical Pre- and Post-Electrical Test Conditions
Low RDS(on)
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
ESD Rating: Class 3A per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Parameter
I
D
@ V
GS
= -12V, T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Package Mounting Surface Temperature
Weight
300 (for 5s)
3.3 (Typical)
-38
-24
-152
300
2.4
± 20
500
-38
30
-17
-55 to + 150
I
D
@ V
GS
= -12V, T
C
= 100°C Continuous Drain Current
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
For Footnotes refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2018-03-09
IRHNA9160
JANSR2N7425U
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
Gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
tr
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
-100 –––
––– -0.11
–––
–––
-2.0
15
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
V/°C
V
S
µA
nA
nC
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
Reference to 25°C, I
D
= -1.0mA
V
GS
= -12V, I
D
= -24A
V
GS
= -12V, I
D
= -38A
V
DS
= V
GS
, I
D
= -1.0mA
V
DS
= -15V, I
D
= -24A
V
DS
= -80V, V
GS
= 0V
V
DS
= -80V,V
GS
= 0V,T
J
=125°C
V
GS
= -20V
V
GS
= 20V
I
D
= -38A
V
DS
= -50V
V
GS
= -12V
V
DD
= -50V
I
D
= -38A
R
G
= 2.35
V
GS
= -12V
Measured from center of Drain
pad to center of Source pad
––– 0.068
––– 0.071
––– -4.0
––– –––
––– -25
––– -250
––– -100
––– 100
––– 290
–––
72
–––
90
–––
35
––– 170
––– 190
––– 190
4.0
6000
1500
400
–––
–––
–––
–––
ns
nH
V
GS
= 0V
pF
V
DS
= -25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-38
-152
-3.3
300
2.1
A
V
ns
µC
Test Conditions
T
J
= 25°C,I
S
= -38A, V
GS
= 0V
T
J
= 25°C,I
F
= -38A,V
DD
≤
-50V
di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance
Parameter
R
JC
R
J-PCB
Junction-to-Case
Junction-to-PC Board
Min.
–––
–––
Typ.
–––
1.6
Max.
0.42
–––
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= -25V, starting T
J
= 25°C, L = 0.7mH, Peak I
L
= -38A, V
GS
= -12V
V
I
SD
-38A, di/dt
-385A/µs, V
DD
-100V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias.
-12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias.
-80 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2018-03-09
IRHNA9160
JANSR2N7425U
Radiation Characteristics
Pre-Irradiation
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-2)
Diode Forward Voltage
100 kRads (Si)
1
Min.
-100
-2.0
–––
–––
–––
–––
–––
–––
Max.
–––
-4.0
-100
100
-25
0.068
0.068
-3.3
300 kRads (Si)
2
Min.
-100
-2.0
–––
–––
–––
–––
–––
–––
Max.
–––
-5.0
-100
100
-25
0.068
0.068
-3.3
V
V
nA
nA
µA
V
V
GS
= 0V, I
D
= -1.0mA
V
DS
= V
GS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20V
V
DS
= -80V, V
GS
= 0V
V
GS
= -12V, I
D
= -24A
V
GS
= -12V, I
D
= -24A
V
GS
= 0V, I
D
= -38A
Units
Test Conditions
1. Part numbers IRHNA9160 (JANSR2N7425U)
2. Part numbers IRHNA93160 (JANSF2N7425U)
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm
2
))
28 ± 5%
37 ± 5%
59.9 ± 5%
Energy
(MeV)
283.3 ± 7.5%
305 ± 5%
345 ± 5%
Range
(µm)
42.8 ± 5%
39 ± 5%
32.8 ± 5%
VDS (V)
@ VGS = 0V @ VGS=5V @ VGS=10V @ VGS =15V @ VGS=20V
-100
-100
-60
-100
-100
–––
-100
-70
–––
-70
-50
–––
-60
-40
–––
-120
-100
-80
-60
-40
-20
0
0
5
10
Bias VGS (V)
15
20
Bias VDS (V)
LET=28 ± 5%
LET=37 ± 5%
LET=59.9 ± 5%
Fig a.
Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
International Rectifier HiRel Products, Inc.
2018-03-09
IRHNA9160
JANSR2N7425U
Pre-Irradiation
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
10000
Fig 4.
Normalized On-Resistance Vs. Temperature
20
8000
-V
GS
, Gate-to-Source Voltage (V)
V
GS
C
iss
C
rss
C
oss
= 0V,
f = 1MHz
= C
gs
+ C
gd ,
C
ds
SHORT ED
= C
gd
= C
ds
+ C
gd
I
D
= -38 A
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
16
C, Capacitance (pF)
6000
Ciss
12
4000
8
2000
Coss
Crss
4
0
1
10
100
0
FOR T EST CIRCUIT
SEE FIGURE 13
0
50
100
150
200
250
300
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
4
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
2018-03-09
International Rectifier HiRel Products, Inc.
IRHNA9160
JANSR2N7425U
Pre-Irradiation
1000
-I
SD
, Reverse Drain Current (A)
100
T
J
= 150
°
C
T
J
= 25
°
C
10
1
0.1
0.0
V
GS
= 0 V
1.0
2.0
3.0
4.0
-V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
40
Fig 8.
Maximum Safe Operating Area
-I
D
, Drain Current (A)
30
20
10
0
25
50
75
100
125
150
T
C
, Case Temperature
( °C)
Fig 9.
Maximum Drain Current Vs. Case Temperature
1
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z
thJC
)
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
International Rectifier HiRel Products, Inc.
2018-03-09
消费电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
