SMT720
Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Peak Wavelength
4) Package
(1) Lead Frame Die
(2) Package Resin
(3) Lens
High Performance Infrared TOP IR LED
SMT720 consists of an AlGaAs LED mounted on the lead frame as TOP LED package
and is 10 mW typical of output power.
It emits a spectral band of radiation at 720 nm.
Outer dimension (Unit: mm)
TOP IR LED
SMT720
AlGaAs
720 nm typ.
Silver Plated
PPA Resin
Epoxy Resin
Absolute Maximum Rating
Item
Power Dissipation
Forward Current
Pulse Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature
Symbol
P
D
I
F
I
FP
V
R
T
OPR
Maximum Rated Value
100
50
200
5
-20 ~ +80
-30 ~ +80
240
Unit
mW
mA
mA
V
°C
°C
°C
Ambient Temperature
Ta = 25°C
Ta = 25°C
Ta = 25°C
Ta = 25°C
T
STG
T
SOL
‡
Pulse Forward Current condition: Duty = 1% and Pulse Width = 10 µs.
‡
Soldering condition: Soldering condition must be completed within 3 seconds at 260°C
Electro-Optical Characteristics [Ta=25°C]
Item
Symbol Condition Minimum
Forward Voltage
V
F
I
F
=50mA
Reverse Current
I
R
V
R
=5V
Total Radiated Power
P
O
I
F
=50mA
5.0
Radiant Intensity
I
E
I
F
=50mA
2.0
Peak Wavelength
l
P
I
F
=50mA
Half Width
Dl
I
F
=50mA
Viewing Half Angle
Q
1/2
I
F
=50mA
Rise Time
tr
I
F
=50mA
Fall Time
tf
I
F
=50mA
‡
Total Radiated Power is measured by Photodyne #500
‡
Radiant Intensity is measured by Tektronix J-6512.
Typical
1.90
10.0
5.0
720
20
±55
80
80
Maximum
2.30
10
Unit
V
uA
mW
mW/sr
nm
nm
deg.
ns
ns
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