UNISONIC TECHNOLOGIES CO., LTD
UF450
12 Amps, 500 Volts
N-CHANNEL POWER
MOSFET
DESCRIPTION
The
UF450
uses advanced UTC technology to provide
excellent R
DS(ON)
, low gate charge and operation with low
gate voltages. This device is suitable for use as a load
switch, in PWM applications, motor controls, inverters,
choppers, audio amplifiers and high energy pulse circuits.
Power MOSFET
1
TO-247
FEATURES
* R
DS(ON)
= 0.4Ω@V
GS
= 10V
* Ultra low gate charge (max. 120nC )
* Low reverse transfer capacitance ( C
RSS
= typical 240pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
*Pb-free plating product number: UF450L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
UF450-T47-T
UF450L-T47-T
Package
TO-247
Pin Assignment
1
2
3
G
D
S
Packing
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-185.A
UF450
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Gate-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Avalanche Current
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
(T
C
=25℃)
Power MOSFET
SYMBOL
RATINGS
UNIT
V
GSS
±20
V
I
D
12
A
I
DM
48
A
I
AR
12
A
E
AS
8.0
mJ
190
W
P
D
Peak Diode Recovery dv/dt (Note 2)
dv/dt
3.5
V/ns
℃
Junction Temperature
T
J
+150
℃
Strong Temperature
T
STG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
SYMBOL
MIN
TYP
Junction-to- Ambient
θ
JA
Junction-to-Case
θ
jC
ELECTRICAL CHARACTERISTICS
(T
J
=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0 V, I
D
=1.0 mA
500
Drain-Source Leakage Current
I
DSS
V
DS
=400V,V
GS
=0 V
Gate-Source Leakage Current
I
GSS
V
DS
=0 V, V
GS
= ±20V
Breakdown Voltage Temperature Coefficient
∆BV
DSS
/∆T
J
Reference to 25
℃
, I
D
=1.0mA
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250 µA
2.0
V
GS
=10V, I
D
=7.75A
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=12A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
=0V,
Output Capacitance
C
OSS
f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
55
V
DS
=250V, V
GS
=10V,
Gate Source Charge
Q
GS
5.0
I
D
=12A
27
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
V
DD
=250V, I
D
=12A,
Turn-ON Rise Time
t
R
R
G
=2.35Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
=12A,V
GS
=0V, T
J
=25℃
Drain-Source Diode Forward Voltage
V
SD
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
I
F
=12 A, dI/dt≤100A/µs,
Reverse Recovery Time
t
RR
T
J
=25℃,V
DD
≤50V
(Note3)
Reverse Recovery Charge
Q
RR
Notes: 1. Repetitive Rating : Pulse width limited by T
J
2. V
DD
= 50V, starting T
J
= 25℃, Peak I
L
= 12A, I
SD
≤
12, di/dt
≤
130A/µs,V
DD
≤
500V,
T
J
≤150℃Suggested
R
G
=2.35Ω
3. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
4. Essentially independent of operating temperature
PARAMETER
MAX
30
0.83
TYP
MAX
UNIT
℃/W
℃/W
UNIT
V
µA
nA
V/℃
V
mΩ
25
±100
0.78
4.0
400
500
2700
600
240
120
19
70
35
190
170
130
1.7
12
pF
nC
ns
V
A
48
1600
14
ns
µc
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QW-R502-185.A
UF450
TEST CIRCUITS AND WAVEFORMS
Switching Time Test Circuit
V
GS
V
DS
R
D
Power MOSFET
Switching Time Waveforms
V
DS
90
R
G
V
GS=
10V
DUT
+
V
-
DD
10
V
GS
Pulse Width≤1µs Duty Cycle≤0.1
t
d(on)
t
r
t
d(off)
t
f
Unclamped Inductive Test Circuit
V
GS
V
DS
L
15V
Driver
R
G
Unclamped Inductive Waveforms
V
(BR)DSS
t
P
DUT
V
DD
+
-
0.01Ω
V
GS
=10V
0V
I
AS
t
P
I
AS
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QW-R502-185.A
UF450
TYPICAL CHARACTERISTICS
Typical Output Characteristics
4.5,5.0,5.5,6.0,7.0,8.0,10,15V
Drain Current,I
D
(A)
Power MOSFET
Typical Output Characteristics
4.5,5.0,5.5,6.0,7.0,8.0,10,15V
Drain Current,I
D
(A)
10
1
10
1
4.5V
4.5V
10
0
10
0
20μs Pulse Width
T
C
=25℃
10
1
Drain to Source Voltage,V
DS
(V)
10
0
20μs Pulse Width
T
C
=150℃
10
1
Drain to Source Voltage,V
DS
(V)
10
0
Typical Transfer Characteristics
Normalized Drain to Source On-
Resistance,R
DS(ON)
10
Single Pulse Energy,E
AS
(mJ)
Normalized On-Resistance vs. Temperature
3.0
I
D
=12A
2.5
2.0
1.5
1.0
0.5
V
GS
=10V
0.0
-50 -40 -20 0 20 40 60 80 100 120140 160
Junction Temperature,T
J
(℃)
Drain Current,I
D
(A)
150℃
10
1
25℃
10
0
V
DS
=50V
20μs Pulse Width
4
5
7
8
9
6
Gate to Source Voltage,V
GS
(V)
Drain Current,I
D
(A)
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QW-R502-185.A
UF450
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
Gate to Source Voltage,V
GS
(V)
Body-Diode Characteristics
10
Reverse Drain Current,I
S
(A)
150℃
Drain Current,I
D
(A)
10
1
25℃
Capacitance (pF)
3
Maximum Safe Operating Area
10
2
R
DS(ON)
Limited
10μs
10
100μs
1ms
10
0
1
V
GS
=0V
0.6
0.8
1.0
1.2
Body Diode Forward Voltage,V
SD
(V)
10ms
T
C
=25℃
T
J
=150℃
Single Pulse
1
10
2
10
Drain to Source Voltage,V
DS
(V)
10
3
10
-1
0.4
0.1
10
Maximum Effective Transient Thermal Impedance,Junction-to-Case
In descending order
D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse
Thermal Response, Z
thJC
1
0.1
P
DM
t
1
t
2
10
-2
1.Duty Factor,D=t
1
/t
2
2.Peak T
J
=P
DM
.Z
thJC
+T
C
10
-3
10
-5
10
-4
10
-3
10
-2
0.1
Rectangular Pulse Duration,t
1
(s)
1
10
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QW-R502-185.A
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