Technical Data Sheet
5mm Infrared LED, T-1 3/4
SIR333C/H0/L9
Features
․High
reliability
․2.54mm
lead spacing
․Low
forward voltage
․Good
spectral matching
to Si photodetector
․Pb
free
․The
product itself will remain within RoHS compliant version.
Descriptions
․EVERLIGHT’S
Infrared Emitting Diode(SIR333C/H0/L9)
is a high intensity diode , molded in a water clear plastic
package.
․The
device is spectrally matched with phototransistor , photodiode
and infrared receiver module.
Applications
․Free
air transmission system
․Optoelectronic
switch
․Floppy
disk drive
․Infrared
applied system
․Smoke
detector
Device Selection Guide
LED Part No.
SIR
Chip
Material
GaAlAs
Lens Color
Water clear
Everlight Electronics Co., Ltd.
Device No
http://www.everlight.com
Prepared date
Rev 3
Page: 1 of 7
DIS-033-038
01-17-2008
Prepared by JAINE TSAI
：
：
：
SIR333C/H0/L9
Package Dimensions
Notes:
1.All dimensions are in millimeters
2.Tolerances unless dimensions
±0.25mm
Absolute Maximum Ratings (Ta=25℃)
℃
Parameter
Continuous Forward Current
Peak Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature
*2
Power Dissipation at(or below)
25℃Free Air Temperature
*1
Symbol
I
F
I
FP
V
R
T
opr
T
stg
T
sol
P
d
Rating
100
1.0
5
-40 ~ +85
-40 ~ +85
260
150
Units
mA
A
V
℃
℃
℃
mW
Notes:
*1:I
FP
Conditions--Pulse Width≦100μs and Duty≦1%.
*2:Soldering time≦5 seconds.
Everlight Electronics Co., Ltd.
Device No
http://www.everlight.com
Prepared date
Rev 3
Page: 2 of 7
DIS-033-038
01-17-2008
Prepared by JAINE TSAI
：
：
：
SIR333C/H0/L9
Electro-Optical Characteristics (Ta=25℃)
℃
Parameter
Symbol
Condition
I
F
=20mA
I
F
=100mA
Radiant Intensity
Pulse Width
Pulse Width
100
100
s and Duty 1%
s and Duty 1%
Min. Typ. Max.
5.6
--
--
--
--
--
--
--
--
--
11
50
450
875
80
1.3
1.4
2.6
--
30
--
--
--
--
--
1.6
1.8
4.0
10
--
Units
I
F
=1A
Peak Wavelength
Spectral Bandwidth
λp
Δλ
I
F
=20mA
I
F
=20mA
I
F
=20mA
I
F
=100mA
Pulse Width
Pulse Width
100
100
s and Duty 1%
s and Duty 1%
I
F
=1A
Reverse Current
View Angle
I
R
2θ1/2
V
R
=5V
I
F
=20mA
Rank
Condition: I
F
=20mA
Unit: mW/sr
Bin number
Min
Max
L
5.6
8.9
M
7.8
12.5
N
11.0
17.6
Everlight Electronics Co., Ltd.
Device No
http://www.everlight.com
Prepared date
DIS-033-038
01-17-2008
Prepared by JAINE TSAI
：
≦
≦
μ ≦
μ ≦
Forward Voltage
V
F
≦
≦
μ ≦
μ ≦
：
I
e
mW/sr
nm
nm
V
μA
deg
P
15.0
24.0
Rev 3
Page: 3 of 7
：
SIR333C/H0/L9
Typical Electro-Optical Characteristics Curves
Fig.1 Forward Current vs.
Ambient Temperature
041
Fig.2 Spectral Distributio
n
100
80
60
40
20
0
I
F
=20mA
Ta=25°C
Fig.3
920
900
10
875
10
2
860
1
10
84
0
-25
Everlight Electronics Co., Ltd.
Device No
DIS-033-038
Prepared date
01-17-2008
Prepared by JAINE TSAI
：
：
：
021
001
02
04
08
06
0
-40 -20 0
20
40
60
80
100
810 835 855 875 905 925 945 965 985
Peak Emission Wavelength
Fig.4
Forward Current
Ambient Temperature
vs. Forward Voltage
10
4
3
0
25
50
75
100
0
1
2
3
4
http://www.everlight.com
Rev 3
Page: 4 of 7
SIR333C/H0/L9
Typical Electro-Optical Characteristics Curves
Fig.5 Relative Intensity vs.
Forward Current
Fig.6 Relative Radiant Intensity vs.
Angular Displacement
1000
Ie-Radiant Intensity(mW/sr)
-20
-10
0
10
20
30
100
1.0
10
40
50
60
70
80
0.6 0.4 0.2
0
0.2 0.4 0.6
0.9
0.8
0.7
0
10
0
10
1
10
2
10
3
10
4
I
F
-Forward Current (mA
)
Fig.7 Relative Intensity vs.
Ambient Temperature( C)
Fig.8 Forward Voltage vs.
Ambient Temperature( C)
15
I
F
=20mA
1.4
10
1.3
I
F
=20mA
5
1.2
0
25
50
75
100
120
1.1
25
50
75
100
120
Everlight Electronics Co., Ltd.
Device No
http://www.everlight.com
Prepared date
Rev 3
DIS-033-038
01-17-2008
Prepared by JAINE TSAI
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：
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Page: 5 of 7
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